DMG9N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V(BR)DSS RDS(ON) Package 650V 1.3Ω @ VGS = 10V ITO-220AB ID TC = +25°C 9.0A Description Low Input Capacitance High BVDss Rating for Power Application Low Input/Output Leakage Lead-Free Finish; RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability This new generation complementary dual MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power management applications. Mechanical Data Applications Motor Control Backlighting DC-DC Converters Power Management Functions Case: ITO-220AB Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Below Weight: ITO-220AB – 1.85 grams (Approximate) D ITO-220AB G S Top View Bottom View Equivalent Circuit Top View Pin Out Configuration Ordering Information (Note 4) Part Number DMG9N65CTI Notes: Case ITO-220AB Packaging 50 pieces/tube 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. Marking Information ITO-220AB 9N65CTI 9N65CTI = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 13 = 2013) WW = Week (01 - 53) YYWW AB DMG9N65CTI Document number: DS36027 Rev. 4 - 2 1 of 5 www.diodes.com February 2015 © Diodes Incorporated DMG9N65CTI Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Notes 5 & 6) TC = +25°C Steady State VGS = 10V TC = +70°C Pulsed Drain Current (Note 7) 10µs pulse, pulse duty cycle<=1% Avalanche Current (Note 8) VDD = 100V, VGS = 10V, L = 60mH Repetitive avalanche energy (Note 8) VDD = 100V, VGS = 10V, L = 60mH Symbol VDSS VGSS Value 650 ±30 9.0 7.0 30 2.7 260 ID IDM IAR EAR Unit V V A A A mJ Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range Symbol TC = +25°C TC = +70°C TC = +25°C Unit PD Max 13 8 RθJC TJ, TSTG 8.84 -55 to +150 °C/W °C W Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge VGS = 10V Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS 650 - - 1.0 ±100 V µA nA VGS = 0V, ID = 250µA VDS = 650V, VGS = 0V VGS = ±30V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD 3 - 0.7 8.5 0.7 5 1.3 1.0 V Ω S V VDS = VGS, ID = 250μA VGS = 10V, ID = 4.5A VDS = 40V, ID = 4.5A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr - 2310 122 2.2 2.2 39 8.5 11.9 39 29 122 28 570 4.17 - pF VDS = 25V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VGS = 10V, VDS = 520V, ID = 8A ns ns ns ns ns µC Test Condition VGS = 10V, VDS = 325V, RG = 25Ω, ID = 8A dI/dt = 100A/µs, VDS = 100V, IF = 8A 5. Device mounted on an infinite heatsink. 6. Drain current limited by maximum junction temperature. 7. Repetitive rating, pulse width limited by junction temperature. 8. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to production testing. DMG9N65CTI Document number: DS36027 Rev. 4 - 2 2 of 5 www.diodes.com February 2015 © Diodes Incorporated DMG9N65CTI 10 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 10V 4 8 12 16 V DS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 1.5 1.0 VGS = 10V VGS = 20V 0.5 0 0 2 4 6 8 ID, DRAIN-SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 10 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 3.0 2.5 VGS = 10 V ID = 5A 2.0 VGS = 15V ID = 10A 1.5 1.0 0.5 0 50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature DMG9N65CTI Document number: DS36027 Rev. 4 - 2 TA = 125°C 0.1 TA = 85°C TA = 25°C TA = -55°C 0.01 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 2.0 TA = 150°C 0.001 20 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) 0 1 1 2 3 4 5 VGS, GATE-SOURCE VOLTAGE Fig. 2 Typical Transfer Characteristics 6 4 VGS= 10V 3 TA = 150°C 2 TA = 125°C TA = 85°C 1 TA = 25°C 0 TA = -55°C 0 2 4 6 8 ID, DRAIN CURRENT Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 10 3.0 2.5 2.0 VGS = 10V ID = 5A 1.5 VGS = 15V ID = 10A 1.0 0.5 0 - 50 -25 0 25 50 75 100 125 150 T J, JUNCTION TEMPERATURE ( C) Fig. 6 On-Resistance Variation with Temperature 3 of 5 www.diodes.com February 2015 © Diodes Incorporated DMG9N65CTI 10 8 IS, SOURCE CURRENT (V) VGS(th), GATE THRESHOLD VOLTAGE (V) 6 5 ID = 1mA 4 ID = 250µA 3 TA = 25°C 6 4 2 2 -50 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A A1 35 ° 50 ° P 5° Ø E 5° B ITO-220AB Dim Min Typ Max A 4.50 4.70 4.90 A1 3.04 3.24 3.44 A2 2.56 2.76 2.96 b 0.50 0.60 0.75 b1 1.10 1.20 1.35 c 0.50 0.60 0.70 D 15.67 15.87 16.07 D1 8.99 9.19 9.39 e 2.54 E 9.91 10.11 10.31 L 9.45 9.75 10.05 L1 15.80 16.00 16.20 P 2.98 3.18 3.38 Q 3.10 3.30 3.50 All Dimensions in mm Q B D 5° 5° D1 L1 5° b1 3x A2 L b 3x e 3° e 5° c 5° 5° 5° ØP SECTION B-B DMG9N65CTI Document number: DS36027 Rev. 4 - 2 4 of 5 www.diodes.com February 2015 © Diodes Incorporated DMG9N65CTI IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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