ZXMS6004DT8Q ADVANCE INFORMATION 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET® MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage On-State Resistance Nominal Load Current (VIN = 5V) Clamping Energy VDS = 60V 500mΩ Low Input Current 1.2A Logic Level Input (3.3V and 5V) 210mJ Short Circuit Protection with Auto Restart Over Voltage Protection (active clamp) Description Thermal Shutdown with Auto Restart Over-Current Protection The ZXMS6004DT8Q is a dual self protected low side MOSFET with Input Protection (ESD) logic level input. It integrates over-temperature, over-current, over- High Continuous Current Rating voltage (active clamp) and ESD protected logic level functionality. The Qualified to AEC-Q101 Standards for High Reliability ZXMS6004DT8Q is ideal as a general purpose switch driven from MOSFETs are not rugged enough. PPAP Capable Lead-Free Finish; RoHS compliant (Note 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Applications Mechanical Data 3.3V or 5V microcontrollers in harsh environments where standard Two completely isolated independent channels Especially suited for loads with a high in-rush current such as lamps and motors All types of resistive, inductive and capacitive loads in switching applications μC compatible power switch for 12V and 24V DC applications. Automotive rated Replaces electromechanical relays and discrete circuits Linear Mode capability - the current-limiting protection circuitry is designed to de-activate at low VDS to minimise on state power dissipation. The maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the product’s ability to self-protect at low VDS. Compact Dual Package Case: SM-8 Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: 0.117 grams (approximate) SM-8 IN1 1 D1 S1 D1 IN2 D2 S2 D2 Top view Pin-Out Top View Ordering Information Product ZXMS6004DT8QTA Notes: Marking ZXMS6004D Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1,000 units 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6004DT8Q Document number: DS32245 Rev. 2 -1 1 of 9 www.diodes.com April 2014 © Diodes Incorporated ZXMS6004DT8Q ADVANCE INFORMATION Marking Information Pin 1 ZXMS 6004D ZXMS6004D = Product Type Marking Code Functional Block Diagram IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6004DT8Q Document number: DS32245 Rev. 2 -1 2 of 9 www.diodes.com April 2014 © Diodes Incorporated ZXMS6004DT8Q ADVANCE INFORMATION Absolute Maximum Ratings (@Tamb = +25°C, unless otherwise stated.) Characteristic Continuous Drain-Source Voltage Drain-Source Voltage For Short Circuit Protection Continuous Input Voltage Continuous Input Current @ -0.2V ≤ VIN ≤ 6V Continuous Input Current @VIN < -0.2V or VIN > 6V Pulsed Drain Current @VIN = 3.3V (Note 8) Pulsed Drain Current @VIN = 5V (Note 8) Continuous Source Current (Body Diode) (Note 6) Pulsed Source Current (Body Diode) (Note 8) Unclamped Single Pulse Inductive Energy, TJ = +25C, ID = 0.5A, VDD = 24V Electrostatic Discharge (Human Body Model) Charged Device Model Symbol VDS VDS(SC) VIN Units V V V IDM IDM IS ISM Value 60 36 -0.5 ... +6 No limit │IIN │≤2 2 2.5 1 5 EAS 210 mJ VESD VCDM 4000 1000 V V IIN mA A A A A Thermal Resistance Characteristic Power Dissipation at Tamb = +25°C (Notes 6 & 9) Linear Derating Factor Power Dissipation at Tamb = +25°C (Notes 6 & 10) Linear Derating Factor Power Dissipation at Tamb = +25°C (Notes 7 & 9) Linear Derating Factor Thermal Resistance, Junction to Ambient (Notes 6 & 9) Thermal Resistance, Junction to Ambient (Notes 6 & 10) Thermal Resistance, Junction to Case (Notes 7 & 9) Thermal Resistance, Junction to Case (Note 11) Operating Temperature Range Storage Temperature Range Notes: Symbol PD PD PD RθJA RθJA RθJC RθJC TJ TSTG Value 1.16 9.28 1.67 13.3 2.13 17 108 75 58.7 26.5 -40 to +150 -55 to +150 Units W mW/°C W mW/°C W mW/°C °C/W °C/W °C/W °C/W °C °C 6. For a dual device surface mounted on a 25mm x 25mm FR4 PCB single sided 1oz weight copper split down the middle on 1.6mm FR4 board, in still air conditions 7. For a dual device surface mounted on FR4 PCB measured at t ≤ 10sec 8. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02 pulse width = 300μs – pulse width limited by junction temperature. Refer to transient Thermal Impedance Graph 9. For a dual device with one active die 10. For dual device with 2 active die running at equal power 11. Thermal resistance from junction to solder-point (at the end of the drain lead) Recommended Operating Conditions The ZXMS6004DT8Q is optimized for use with µC operating from 3.3V and 5V supplies. Characteristic Input Voltage Range Ambient Temperature Range High Level Input Voltage for MOSFET to be on Low Level Input Voltage for MOSFET to be off Peripheral Supply Voltage (Voltage to Which Load is Referred) Symbol VIN TA VIH VIL VP Min 0 -40 3 0 0 Max 5.5 125 5.5 0.7 36 Unit V °C V V V IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6004DT8Q Document number: DS32245 Rev. 2 -1 3 of 9 www.diodes.com April 2014 © Diodes Incorporated ZXMS6004DT8Q ADVANCE INFORMATION Thermal Characteristics IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6004DT8Q Document number: DS32245 Rev. 2 -1 4 of 9 www.diodes.com April 2014 © Diodes Incorporated ZXMS6004DT8Q ADVANCE INFORMATION Electrical Characteristics (@Tamb = +25°C, unless otherwise stated.) Characteristic Static Characteristics Drain-Source Clamp Voltage Symbol Min Typ Max Unit VDS(AZ) 60 — — 0.7 — — — — — 0.9 1 1.1 1.2 0.7 1 65 — — 1 60 120 — 400 350 — — — — 1.7 2.2 70 0.5 1 1.5 100 200 220 600 500 — — — — — — V td(on) tr td(off) ff — — — — 5 10 45 15 — — — — µs µs µs µs TJT — 150 — 175 10 — — °C °C Off State Drain Current IDSS Input Threshold Voltage VIN(th) Input Current IIN Input Current while Over Temperature Active — Static Drain-Source On-State Resistance RDS(on) Continuous Drain Current (Notes 6 & 10) ID Continuous Drain Current (Notes 6 & 9) Current Limit (Note 12) Dynamic Characteristics Turn On Delay Time Rise Time Turn Off Delay Time Fall Time Over-Temperature Protection Thermal Overload Trip Temperature (Note 13) Thermal Hysteresis (Note 13) ID(LIM) µA V µA µA mΩ A A Test Condition ID = 10mA VDS = 12V, VIN = 0V VDS = 36V, VIN = 0V VDS = VGS, ID = 1mA VIN = +3V VIN = +5V VIN = +5V VIN = +3V, ID = 1A VIN = +5V, ID = 1A VIN = 3V; TA = +25°C VIN = 5V; TA = +25°C VIN = 3V; TA = +25°C VIN = 5V; TA = +25°C VIN = +3V VIN = +5V VDD = 12V, ID = 0.5A, VGS = 5V — — Notes: 12. The drain current is restricted only when the device is in saturation (see graph “Typical Output Characteristic”). This allows the device to be used in the fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside saturation makes current limit unnecessary. 13. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal operating range, so this part is not designed to withstand over-temperature for extended periods. IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6004DT8Q Document number: DS32245 Rev. 2 -1 5 of 9 www.diodes.com April 2014 © Diodes Incorporated ZXMS6004DT8Q ADVANCE INFORMATION Typical Characteristics IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6004DT8Q Document number: DS32245 Rev. 2 -1 6 of 9 www.diodes.com April 2014 © Diodes Incorporated ZXMS6004DT8Q ADVANCE INFORMATION Typical Characteristics – (cont.) IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6004DT8Q Document number: DS32245 Rev. 2 -1 7 of 9 www.diodes.com April 2014 © Diodes Incorporated ZXMS6004DT8Q Package Outline Dimensions ADVANCE INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. E A E1 SM-8 Dim Min Max Typ A 1.7 A1 0.02 0.1 b 0.7 c 0.24 0.32 D 6.3 6.7 e 1.53 e1 4.59 E 6.7 7.3 E1 3.3 3.7 L 0.9 All Dimensions in mm A1 b D e 15° e1 Pin #1 45° c L Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y (8x) Dimensions C C1 X Y Y1 C1 Y1 X (8x) Value (in mm) 1.52 4.6 0.95 2.80 6.80 C IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6004DT8Q Document number: DS32245 Rev. 2 -1 8 of 9 www.diodes.com April 2014 © Diodes Incorporated ZXMS6004DT8Q ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2013, Diodes Incorporated www.diodes.com IntelliFET is a registered trademark of Diodes Incorporated. ZXMS6004DT8Q Document number: DS32245 Rev. 2 -1 9 of 9 www.diodes.com April 2014 © Diodes Incorporated