DMN3026LVT 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(on) max ID TA = +25°C Low Input Capacitance Low On-Resistance 23mΩ @ VGS = 10V 6.6A Fast Switching Speed 5.8A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching Mechanical Data V(BR)DSS 30V 30mΩ @ VGS = 4.5V performance, making it ideal for high efficiency power management Case: TSOT26 applications. Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram DC-DC Converters Power management functions Terminals: Finish – Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 Backlighting Weight: 0.013 grams (approximate) TSOT26 D 1 6 D D 2 5 D G 3 4 S Top View Top View Pin Configuration Equivalent Circuit Ordering Information (Note 4) Part Number DMN3026LVT-7 DMN3026LVT-13 Notes: Case TSOT26 TSOT26 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information Shanghai A/T Site Date Code Key Year Code Month Code 2010 X Jan 1 N5L Chengdu A/T Site 2011 Y Feb 2 DMN3026LVT Document number: DS36813 Rev. 3 - 2 N5L = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) Y̅ M = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y̅ = Year (ex: A = 2013) M = Month (ex: 9 = September) YM N5L YM ADVANCE INFORMATION ADVANCED INFORMATION Features and Benefits Mar 3 2012 Z Apr 4 May 5 2013 A Jun 6 1 of 6 www.diodes.com 2014 B Jul 7 Aug 8 2015 C Sep 9 Oct O 2016 D Nov N Dec D April 2014 © Diodes Incorporated DMN3026LVT Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic ADVANCE INFORMATION ADVANCED INFORMATION Drain-Source Voltage Symbol VDSS Value 30 Units V Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V VGSS ±20 V Steady State TA = +25°C TA = +70°C ID 6.6 5.3 A t<10s TA = +25°C TA = +70°C ID 8.5 6.8 A IS 3.0 A IDM 35 A Maximum Body Diode Forward Current (Note 6) Pulsed Drain Current (10s pulse, duty cycle = 1%) Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C Total Power Dissipation (Note 5) PD TA = +70°C Steady state t<10s Thermal Resistance, Junction to Ambient (Note 5) RθJA TA = +25°C Total Power Dissipation (Note 6) PD W 0.8 100 60 1.5 °C/W °C/W W RθJC °C/W °C/W °C/W TJ, TSTG -55 to +150 °C RθJA Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Units 1.0 83 50 14.5 TA = +70°C Steady state t<10s Thermal Resistance, Junction to Ambient (Note 6) Value 1.2 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit Test Condition BVDSS 30 Zero Gate Voltage Drain Current IDSS 1.0 µA VDS = 30V, VGS = 0V Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage IGSS 100 nA VGS = 20V, VDS = 0V VGS(th) 1.0 1.5 2.0 V VDS = VGS, ID = 250µA 19 23 22 30 Static Drain-Source On-Resistance RDS(ON) Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance VSD 0.7 1.2 Ciss 643 Output Capacitance Coss 65 Reverse Transfer Capacitance Crss Gate Resistance RG 49 2.5 Total Gate Charge (VGS = 4.5V) Qg 5.7 Total Gate Charge (VGS = 10V) Gate-Source Charge Qg 12.5 Qgs 1.7 V mΩ Qgd 1.8 Turn-On Delay Time tD(on) 2.2 Turn-On Rise Time tr 2.5 Turn-Off Delay Time tD(off) 12.1 VGS = 10V, ID = 6.5A VGS = 4.5V, ID = 6.0A V VGS = 0V, IS = 1.0A pF VDS = 15V, VGS = 0V f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 15V, ID = 4.0A nS VGS = 10V, VDD = 15V, RG = 6.0Ω, ID= 6.5A Gate-Drain Charge VGS = 0V, ID = 250µA Turn-Off Fall Time tf 3.0 Body Diode Reverse Recovery Time trr 6.5 nS IF = 6.5A, dI/dt = 100A/μs Body Diode Reverse Recovery Charge Qrr 1.7 nC IF = 6.5A, dI/dt = 100A/μs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMN3026LVT Document number: DS36813 Rev. 3 - 2 2 of 6 www.diodes.com April 2014 © Diodes Incorporated DMN3026LVT 30 20 VGS = 10V 20 16 VGS = 3V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 4.5V VGS = 4.V VGS = 3.5V 15 VGS = 2.5V 10 14 12 10 8 TA = 150°C 6 4 5 TA = 125°C 2 VGS = 2V 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.03 0.025 VGS = 4.5V 0.02 VGS = 10V 0.015 0.01 1 0 6 11 16 21 26 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage T A = 85°C TA = 25°C TA = -55°C 0 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 4 0.1 0.08 0.06 0.04 ID = 6.5A 0.02 31 0.05 ID = 6A 0 0 4 8 12 16 VGS, GATE-SOURCE CURRENT (V) Figure 4 Typical Transfer Characteristics 20 1.8 VGS = 4.5V VGS = 10V ID = 6.5A 0.045 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ADVANCE INFORMATION ADVANCED INFORMATION 25 VDS = 5.0V 18 VGS = 5V TA = 150°C 0.04 TA = 125°C 0.035 T A = 85°C 0.03 0.025 TA = 25°C 0.02 TA = -55°C 0.015 1.6 1.4 VGS = 4.5V ID = 6A 1.2 1 0.8 0.01 0.005 0 2 4 6 8 10 12 14 16 18 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMN3026LVT Document number: DS36813 Rev. 3 - 2 20 3 of 6 www.diodes.com 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature April 2014 © Diodes Incorporated DMN3026LVT 2 VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.04 VGS = 4.5V ID = 6A 0.03 VGS = 10 V ID = 6.5A 0.02 0.01 1.8 1.6 ID = 250µA 1.4 ID = 1mA 1.2 1 0.8 0 -50 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 10000 20 CT, JUNCTION CAPACITANCE (pF) 18 IS, SOURCE CURRENT (A) 16 14 T A = 150°C 12 10 TA = 125°C 8 T A = 25°C TA = 85°C 6 4 T A = -55°C 2 0 0 f = 1MHz 1000 Ciss 100 Coss Crss 10 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 30 100 ID, DRAIN CURRENT (A) RDS(on) Limited VGS GATE THRESHOLD VOLTAGE (V) ADVANCE INFORMATION ADVANCED INFORMATION 0.05 VDS = 15V ID = 4 A 0 1 2 3 4 5 6 7 8 9 10 11 12 13 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMN3026LVT Document number: DS36813 Rev. 3 - 2 4 of 6 www.diodes.com 10 PW = 10µs DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms 0.1 PW = 1ms TJ(max) = 150°C TA = 25°C PW = 100µs VGS = 10V Single Pulse DUT on 1 * MRP Board 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 April 2014 © Diodes Incorporated DMN3026LVT D = 0.9 D = 0.7 D = 0.5 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION ADVANCED INFORMATION 1 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 97°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 100 1000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. TSOT26 Dim Min Max Typ A — 1.00 — A1 0.01 0.10 — A2 0.84 0.90 — D — — 2.90 E — — 2.80 E1 — — 1.60 b 0.30 0.45 — c 0.12 0.20 — e — — 0.95 e1 — — 1.90 L 0.30 0.50 — L2 — — 0.25 θ 0° 8° 4° θ1 4° 12° — All Dimensions in mm D e1 E E1 L2 c 4x1 e L 6x b A A2 A1 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version. C C Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199 Y1 Y (6x) X (6x) DMN3026LVT Document number: DS36813 Rev. 3 - 2 5 of 6 www.diodes.com April 2014 © Diodes Incorporated DMN3026LVT ADVANCE INFORMATION ADVANCED INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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