DMN10H100SK3 100V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT NEW PRODUCT Product Summary Features BVDSS RDS(ON) max 100V 80mΩ @ VGS = 10V 100mΩ @ VGS = 4.5V ID TC = +25°C 18A 16A Low RDS(ON) – ensures on state losses are minimized Small form factor thermally efficient package enables higher density end products Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description Mechanical Data This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications. Applications Power Management Functions DC-DC Converters Case: TO252 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) D TO252 D G Top View S Top View Pin Out Internal Schematic Ordering Information (Note 4) Part Number DMN10H100SK3-13 Notes: Case TO252 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information TO252 N100SK YYWW DMN10H100SK3 Document number: DS37858 Rev. 2 - 2 =Manufacturer’s Marking N100SK= Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 14 = 2014) WW = Week Code (01 to 53) 1 of 7 www.diodes.com April 2015 © Diodes Incorporated DMN10H100SK3 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Value Units Drain-Source Voltage Characteristic VDSS 100 V Gate-Source Voltage VGSS ±20 V ID 18 14 A IDM 16 A TC = +25°C TC = +70°C NEW PRODUCT NEW PRODUCT Continuous Drain Current (Note 6) VGS = 10V Pulsed Drain Current (380μs Pulse, Duty Cycle = 1%) Avalanche Current, L = 1mH (Note 7) IAS 8 A Avalanche Energy, L = 1mH (Note 7) EAS 32.6 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TC = +25°C Total Power Dissipation (Note 6) PD TC = +70°C Value W 24 Thermal Resistance, Junction to Ambient (Note 5) RθJA 46 Thermal Resistance, Junction to Case (Note 6) RθJC 3.3 TJ, TSTG -55 to +150 Operating and Storage Temperature Range Units 37 °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 100 V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS 1 µA VDS = 80V, VGS = 0V Gate-Source Leakage IGSS ±100 nA VGS = ±20V, VDS = 0V Gate Threshold Voltage VGS(TH) 1.0 2.0 3.0 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) 65 80 70 100 VSD 0.77 Input Capacitance Ciss 1172 Output Capacitance Coss 40.8 Reverse Transfer Capacitance Crss 31.3 Gate Resistance RG 1.6 Total Gate Charge (VGS = 10V) Qg 25.2 Total Gate Charge (VGS = 4.5V) Qg 12.2 Gate-Source Charge Qgs 5.3 Gate-Drain Charge Qgd 5.9 Turn-On Delay Time tD(ON) 5.4 Turn-On Rise Time tR 5.9 Turn-Off Delay Time tD(OFF) 20 tF 7.3 Body Diode Reverse Recovery Time tRR 19.7 ns Body Diode Reverse Recovery Charge Qrr 15.9 nC ON CHARACTERISTICS (Note 8) Diode Forward Voltage mΩ VGS = 10V, ID = 3.3A VGS = 4.5V, ID = 2A V VGS = 0V, IS = 3.2A pF VDS = 50V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 50V, ID = 3.3A ns VDD = 50V, RG = 6.0Ω, ID = 3.3A DYNAMIC CHARACTERISTICS (Note 7) Turn-Off Fall Time Notes: IF = 3.3A, dI/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 6. Device mounted on infinite heatsink. 7. Guaranteed by design. Not subject to product testing. 8. Short duration pulse test used to minimize self-heating effect. DMN10H100SK3 Document number: DS37858 Rev. 2 - 2 2 of 7 www.diodes.com April 2015 © Diodes Incorporated DMN10H100SK3 20.0 10 VDS=10.0V 8 VGS=6.0V VGS=4.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 16.0 9 VGS=8.0V 12.0 VGS=10.0V 8.0 VGS=4.0V 4.0 7 6 5 4 85℃ 125℃ 3 25℃ 2 150℃ 1 VGS=3.5V -55℃ 0.0 0 0 1 2 3 4 5 1 2 3 4 5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 0.1 0.5 0.08 0.4 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic VGS=6.0V 0.06 VGS=10V 0.04 0.3 0.2 ID=3.3A 0.02 0.1 0 0 ID=3.0A 0 2 4 6 8 10 12 14 16 18 2 20 4 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs Drain Current and Gate Voltage 0.16 VGS=10V 0.14 150℃ 0.12 125℃ 0.10 85℃ 0.08 0.06 25℃ 0.04 -55℃ 0.02 0.00 0 1 2 3 4 5 6 7 8 9 10 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs Drain Current and Temperature DMN10H100SK3 Document number: DS37858 Rev. 2 - 2 6 8 10 12 14 16 18 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT NEW PRODUCT VGS=5.0V 3 of 7 www.diodes.com 3 2.5 2 VGS=10V, ID=5A 1.5 VGS=5V, ID=1.0A 1 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature April 2015 © Diodes Incorporated DMN10H100SK3 2.5 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.12 VGS=5V, ID=1.0A 0.09 VGS=10V, ID=5A 0.06 0.03 0 2.2 ID=1mA 1.9 ID=250μA 1.6 1.3 1 -50 -25 0 25 50 75 100 125 150 -50 TJ, JUNCTION TEMPERATURE (℃) 10 0 25 50 75 100 125 150 10000 VGS=0V f=1MHz CT, JUNCTION CAPACITANCE (pF) 9 IS, SOURCE CURRENT (A) -25 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs Temperature Figure 7. On-Resistance Variation with Temperature 8 7 6 TA=125℃ 5 TA=85℃ 4 TA=150℃ 3 TA=25℃ 2 1 TA=-55℃ Ciss 1000 100 Coss Crss 0 10 0 0.3 0.6 0.9 1.2 1.5 0 5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs Current 10 15 20 25 30 35 40 45 50 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 10 100 RDS(ON) Limited ID, DRAIN CURRENT (A) 8 VGS (V) NEW PRODUCT NEW PRODUCT 0.15 6 VDS=50V, ID=3.3A 4 2 0 10 PW =10μs PW =1μs PW =100μs PW =1ms 1 PW =10ms PW =100ms 0.1 PW =1s TJ(MAX)=150℃ TC=25℃ Single Pulse DUT on infinite heatsink VGS=10V 0.01 0 5 10 15 20 25 0.1 1 10 100 1000 Qg, TOTAL GATE CHARGE (nC) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area DMN10H100SK3 Document number: DS37858 Rev. 2 - 2 4 of 7 www.diodes.com April 2015 © Diodes Incorporated DMN10H100SK3 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT NEW PRODUCT 1 D=0.9 D=0.5 D=0.7 D=0.3 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJC(t)=r(t) * RθJC RθJC=3.3℃/W Duty Cycle, D=t1/ t2 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMN10H100SK3 Document number: DS37858 Rev. 2 - 2 5 of 7 www.diodes.com April 2015 © Diodes Incorporated DMN10H100SK3 Package Outline Dimensions E A b3 7°±1° c2 L3 D A2 L4 e H b(3x) b2(2x) 0.508 Gauge Plane D1 E1 Seating Plane a L A1 NEW PRODUCT NEW PRODUCT Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 2.74REF TO252 (DPAK) Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 e 2.286 E 6.45 6.70 6.58 E1 4.32 H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Dimensions C X X1 Y Y1 Y2 Y1 Value (in mm) 4.572 1.060 5.632 2.600 5.700 10.700 Y2 C Y X DMN10H100SK3 Document number: DS37858 Rev. 2 - 2 6 of 7 www.diodes.com April 2015 © Diodes Incorporated DMN10H100SK3 IMPORTANT NOTICE NEW PRODUCT NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com DMN10H100SK3 Document number: DS37858 Rev. 2 - 2 7 of 7 www.diodes.com April 2015 © Diodes Incorporated