Data Sheet - Diodes Incorporated

DMN10H100SK3
100V N-CHANNEL ENHANCEMENT MODE MOSFET
NEW PRODUCT
NEW PRODUCT
Product Summary
Features
BVDSS
RDS(ON) max
100V
80mΩ @ VGS = 10V
100mΩ @ VGS = 4.5V
ID
TC = +25°C
18A
16A

Low RDS(ON) – ensures on state losses are minimized

Small form factor thermally efficient package enables higher
density end products
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)


Description
Mechanical Data
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.





Applications


Power Management Functions
DC-DC Converters

Case: TO252
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin Annealed over Copper Leadframe
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
D
TO252
D
G
Top View
S
Top View
Pin Out
Internal Schematic
Ordering Information (Note 4)
Part Number
DMN10H100SK3-13
Notes:
Case
TO252
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
TO252
N100SK
YYWW
DMN10H100SK3
Document number: DS37858 Rev. 2 - 2
=Manufacturer’s Marking
N100SK= Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 14 = 2014)
WW = Week Code (01 to 53)
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DMN10H100SK3
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Symbol
Value
Units
Drain-Source Voltage
Characteristic
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
ID
18
14
A
IDM
16
A
TC = +25°C
TC = +70°C
NEW PRODUCT
NEW PRODUCT
Continuous Drain Current (Note 6) VGS = 10V
Pulsed Drain Current (380μs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 1mH (Note 7)
IAS
8
A
Avalanche Energy, L = 1mH (Note 7)
EAS
32.6
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
TC = +25°C
Total Power Dissipation (Note 6)
PD
TC = +70°C
Value
W
24
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
46
Thermal Resistance, Junction to Case (Note 6)
RθJC
3.3
TJ, TSTG
-55 to +150
Operating and Storage Temperature Range
Units
37
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
100


V
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS


1
µA
VDS = 80V, VGS = 0V
Gate-Source Leakage
IGSS


±100
nA
VGS = ±20V, VDS = 0V
Gate Threshold Voltage
VGS(TH)
1.0
2.0
3.0
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance
RDS(ON)

65
80

70
100
VSD

0.77

Input Capacitance
Ciss

1172

Output Capacitance
Coss

40.8

Reverse Transfer Capacitance
Crss

31.3

Gate Resistance
RG

1.6

Total Gate Charge (VGS = 10V)
Qg

25.2

Total Gate Charge (VGS = 4.5V)
Qg

12.2

Gate-Source Charge
Qgs

5.3

Gate-Drain Charge
Qgd

5.9

Turn-On Delay Time
tD(ON)

5.4

Turn-On Rise Time
tR

5.9

Turn-Off Delay Time
tD(OFF)

20

tF

7.3

Body Diode Reverse Recovery Time
tRR

19.7

ns
Body Diode Reverse Recovery Charge
Qrr

15.9

nC
ON CHARACTERISTICS (Note 8)
Diode Forward Voltage
mΩ
VGS = 10V, ID = 3.3A
VGS = 4.5V, ID = 2A
V
VGS = 0V, IS = 3.2A
pF
VDS = 50V, VGS = 0V, f = 1MHz
Ω
VDS = 0V, VGS = 0V, f = 1MHz
nC
VDS = 50V, ID = 3.3A
ns
VDD = 50V, RG = 6.0Ω, ID = 3.3A
DYNAMIC CHARACTERISTICS (Note 7)
Turn-Off Fall Time
Notes:
IF = 3.3A, dI/dt = 100A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
6. Device mounted on infinite heatsink.
7. Guaranteed by design. Not subject to product testing.
8. Short duration pulse test used to minimize self-heating effect.
DMN10H100SK3
Document number: DS37858 Rev. 2 - 2
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DMN10H100SK3
20.0
10
VDS=10.0V
8
VGS=6.0V
VGS=4.5V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
16.0
9
VGS=8.0V
12.0
VGS=10.0V
8.0
VGS=4.0V
4.0
7
6
5
4
85℃
125℃
3
25℃
2
150℃
1
VGS=3.5V
-55℃
0.0
0
0
1
2
3
4
5
1
2
3
4
5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.1
0.5
0.08
0.4
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
VGS=6.0V
0.06
VGS=10V
0.04
0.3
0.2
ID=3.3A
0.02
0.1
0
0
ID=3.0A
0
2
4
6
8
10
12
14
16
18
2
20
4
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs Drain Current and
Gate Voltage
0.16
VGS=10V
0.14
150℃
0.12
125℃
0.10
85℃
0.08
0.06
25℃
0.04
-55℃
0.02
0.00
0
1
2
3
4
5
6
7
8
9
10
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs Drain Current and
Temperature
DMN10H100SK3
Document number: DS37858 Rev. 2 - 2
6
8
10
12
14
16
18
20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
NEW PRODUCT
NEW PRODUCT
VGS=5.0V
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3
2.5
2
VGS=10V, ID=5A
1.5
VGS=5V, ID=1.0A
1
0.5
0
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
April 2015
© Diodes Incorporated
DMN10H100SK3
2.5
VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (Ω)
0.12
VGS=5V, ID=1.0A
0.09
VGS=10V, ID=5A
0.06
0.03
0
2.2
ID=1mA
1.9
ID=250μA
1.6
1.3
1
-50
-25
0
25
50
75
100
125
150
-50
TJ, JUNCTION TEMPERATURE (℃)
10
0
25
50
75
100
125
150
10000
VGS=0V
f=1MHz
CT, JUNCTION CAPACITANCE (pF)
9
IS, SOURCE CURRENT (A)
-25
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs Temperature
Figure 7. On-Resistance Variation with Temperature
8
7
6
TA=125℃
5
TA=85℃
4
TA=150℃
3
TA=25℃
2
1
TA=-55℃
Ciss
1000
100
Coss
Crss
0
10
0
0.3
0.6
0.9
1.2
1.5
0
5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs Current
10
15
20
25
30
35
40
45
50
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
10
100
RDS(ON) Limited
ID, DRAIN CURRENT (A)
8
VGS (V)
NEW PRODUCT
NEW PRODUCT
0.15
6
VDS=50V, ID=3.3A
4
2
0
10
PW =10μs
PW =1μs
PW =100μs
PW =1ms
1
PW =10ms
PW =100ms
0.1
PW =1s
TJ(MAX)=150℃
TC=25℃
Single Pulse
DUT on infinite heatsink
VGS=10V
0.01
0
5
10
15
20
25
0.1
1
10
100
1000
Qg, TOTAL GATE CHARGE (nC)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Gate Charge
Figure 12. SOA, Safe Operation Area
DMN10H100SK3
Document number: DS37858 Rev. 2 - 2
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DMN10H100SK3
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
NEW PRODUCT
1
D=0.9
D=0.5
D=0.7
D=0.3
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
RθJC(t)=r(t) * RθJC
RθJC=3.3℃/W
Duty Cycle, D=t1/ t2
D=Single Pulse
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
DMN10H100SK3
Document number: DS37858 Rev. 2 - 2
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DMN10H100SK3
Package Outline Dimensions
E
A
b3
7°±1°
c2
L3
D
A2
L4
e
H
b(3x)
b2(2x)
0.508
Gauge Plane
D1
E1
Seating Plane
a
L
A1
NEW PRODUCT
NEW PRODUCT
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
2.74REF
TO252 (DPAK)
Dim Min Max Typ
A 2.19 2.39 2.29
A1 0.00 0.13 0.08
A2 0.97 1.17 1.07
b 0.64 0.88 0.783
b2 0.76 1.14 0.95
b3 5.21 5.46 5.33
c2 0.45 0.58 0.531
D 6.00 6.20 6.10
D1 5.21
e
2.286
E 6.45 6.70 6.58
E1 4.32
H 9.40 10.41 9.91
L 1.40 1.78 1.59
L3 0.88 1.27 1.08
L4 0.64 1.02 0.83
a
0°
10°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Dimensions
C
X
X1
Y
Y1
Y2
Y1
Value (in mm)
4.572
1.060
5.632
2.600
5.700
10.700
Y2
C
Y
X
DMN10H100SK3
Document number: DS37858 Rev. 2 - 2
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DMN10H100SK3
IMPORTANT NOTICE
NEW PRODUCT
NEW PRODUCT
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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DMN10H100SK3
Document number: DS37858 Rev. 2 - 2
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