DMN4026SK3 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features RDS(ON) ID TC = +25°C 24mΩ @VGS = 10V 28A 32mΩ @VGS = 4.5V 24A NEW PRODUCT 40V 100% Unclamped Inductive Switch (UIS) Test in Production Low On-resistance Fast Switching Speed Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Backlighting DC-DC Converters Power Management Functions Case: TO252 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.33 grams (Approximate) D D TO252 G D G Top View Pin-Out Top View S S Equivalent Circuit Ordering Information (Note 4) Product DMN4026SK3-13 Notes: Case TO252 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information = Manufacturer’s Marking N4026S = Product Type Marking Code . YYWW = Date Code Marking YY = Year (ex: 15 = 2015) WW = Week (01 to 53) N4026S YYWW DMN4026SK3 Document Number DS37277 Rev. 2 - 2 1 of 7 www.diodes.com July 2015 © Diodes Incorporated DMN4026SK3 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Maximum Body Diode Continuous Current Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current (Note 7) L = 0.1mH IS IDM IAS Value 40 ±20 28 18 2.5 70 18 Avalanche Energy (Note 7) L = 0.1mH EAS 17 Drain-Source Voltage Gate-Source Voltage NEW PRODUCT Continuous Drain Current (Note 6) VGS = 10V TC = +25°C TC = +100°C Steady State ID Unit V V mJ A A A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C TA = +70°C Steady state t<10s TA = +25°C TA = +70°C Steady state t<10s Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) PD RθJA PD RθJA Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics RθJC TJ, TSTG Value 1.6 1.0 75 32.7 3.4 2.1 37 18.1 4.5 -55 to +150 Unit W °C/W W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 40 1 100 V µA nA VGS = 0V, ID = 250µA VDS = 40V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) VSD 15 20 0.7 3 24 32 1.0 V Static Drain-Source On-Resistance 1 VDS = VGS, ID = 250µA VGS = 10V, ID = 6A VGS = 4.5V, ID = 5A VGS = 0V, IS = 1.0A Ciss Coss Crss RG Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR 1181 85 63 1.5 9.6 21.3 3.7 3.0 4.3 4.6 19.5 3.1 12.0 3.85 Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = 20V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 20V, ID = 8A ns VDD = 25V, RL = 2.5Ω VGS = 10V, RG = 3Ω ns nC IF = 8A, di/dt = 100A/μs IF = 8A, di/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMN4026SK3 Document Number DS37277 Rev. 2 - 2 2 of 7 www.diodes.com July 2015 © Diodes Incorporated DMN4026SK3 20 VGS=4.0V 16.0 VGS=4.5V 14.0 VGS=10.0V VGS=3.0V 12.0 VGS=3.5V 10.0 8.0 6.0 14 12 10 8 6 2.0 2 0.0 0 0.024 0.022 0.02 VGS=4.5V 0.018 0.016 VGS=10V 0.014 0.012 0.01 0.008 0.006 0 5 10 15 20 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 0.04 VGS= 4.5V 0.035 150℃ 0.03 0.025 125℃ 0.02 85℃ 0.015 25℃ 0.01 -55℃ 0.005 0 0 5 10 15 ID, DRAIN CURRENT (A) 20 Document Number DS37277 Rev. 2 - 2 25℃ 150℃ 85℃ 1 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 5 0.1 0.09 0.08 0.07 0.06 ID=8.0A 0.05 0.04 0.03 0.02 0.01 ID=4.0A 0 3 4 5 6 7 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 8 1.6 1.4 1.2 VGS=4.5V, ID=5.0A 1 0.8 VGS=10.0V, ID=8.0A 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMN4026SK3 -55℃ 125℃ 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 16 4 VGS=2.5V 0 VDS=5.0V 18 ID, DRAIN CURRENT (A) 18.0 4.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT ID, DRAIN CURRENT (A) 20.0 3 of 7 www.diodes.com Figure 6. On-Resistance Variation with Temperature July 2015 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMN4026SK3 0.04 0.03 VGS=4.5V, ID=5.0A 0.01 VGS=10V, ID=8.0A 0 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) 2.5 ID=1mA 2 1.5 ID=250μA 1 0.5 0 150 -50 Figure 7. On-Resistance Variation with Temperature 18 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature 150℃ VGS=0V, TA=25℃ IDSS, LEAKAGE CURRENT (nA) IS, SOURCE CURRENT (A) -25 10000 20 16 VGS=0V, TA=85℃ 14 12 VGS=0V, TA=125℃ 10 8 VGS=0V, TA=150℃ 6 VGS=0V, TA=-55℃ 4 2 1000 125℃ 100 0 85℃ 10 25℃ 1 0.1 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 0 10 15 20 25 30 35 40 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Drain-Source Leakage Current vs. Voltage 10000 5 10 VGS, GATE-SOURCE VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) NEW PRODUCT 0.02 -50 3 VGS(TH), GATE THRESHOLD VOLTAGE (V) 0.05 f=1MHz Ciss 1000 Coss 100 Crss 9 8 7 VDS=20V, ID=8.0A 6 5 4 3 2 1 0 10 0 5 10 15 20 25 30 35 40 VDS, DRAIN-SOURCE VOLTAGE (V) Document Number DS37277 Rev. 2 - 2 2 4 6 8 10 12 14 16 18 20 22 Qg, TOTAL GATE CHARGE (nC) Figure 12. Gate Charge Figure 11. Typical Junction Capacitance DMN4026SK3 0 4 of 7 www.diodes.com July 2015 © Diodes Incorporated DMN4026SK3 100 RDS(ON) Limited ID, DRAIN CURRENT (A) 10 PW =100μs PW =1μs PW =1ms PW =10ms 1 PW =100ms PW =1s TJ(Max)=150℃ TC=25℃ Single Pulse DUT on Infinite Heatsink VGS=10V 0.1 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 13. SOA, Safe Operation Area 1 r (t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT PW =10μs D=0.5 D=0.9 D=0.3 D=0.7 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJC(t)=r(t) * RθJC RθJC=4.5℃/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 1E-06 1E-05 DMN4026SK3 Document Number DS37277 Rev. 2 - 2 0.0001 0.001 0.01 t1, PULSE DURATION TIME (sec) Figure 14. Transient Thermal Resistance 5 of 7 www.diodes.com 0.1 1 10 July 2015 © Diodes Incorporated DMN4026SK3 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. E A b3 7° ± 1° c NEW PRODUCT L3 D A2 L4 e TO252 (DPAK) Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 e 2.286 E 6.45 6.70 6.58 E1 4.32 H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° All Dimensions in mm H b(3x) b2(2x) Gauge Plane 0.508 D1 E1 Seating Plane a L A1 2.74REF Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Y1 Dimensions C X X1 Y Y1 Y2 Y2 C Value (in mm) 4.572 1.060 5.632 2.600 5.700 10.700 Y X DMN4026SK3 Document Number DS37277 Rev. 2 - 2 6 of 7 www.diodes.com July 2015 © Diodes Incorporated DMN4026SK3 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). NEW PRODUCT Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2015, Diodes Incorporated www.diodes.com DMN4026SK3 Document Number DS37277 Rev. 2 - 2 7 of 7 www.diodes.com July 2015 © Diodes Incorporated