DMP3036SSD NEWPRODUCTNEWPRODUCT Product Summary

DMP3036SSD
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
V(BR)DSS
RDS(on) max
-30V
20mΩ @ VGS = -10V
29mΩ @ VGS = -5V
ID
TC = +25°C
-18.0A
-15.0A
PRODUCT
NEW
PRODUCT
NEW
Description
Applications

Power Management Functions

Backlighting
Low Input Capacitance

Fast Switching Speed

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)


making it ideal for high efficiency power management applications.
DC-DC Converters
Low On-Resistance

Mechanical Data
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(on)) and yet maintain superior switching performance,






Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.074 grams (Approximate)
SO-8
D1
SO-8
Pin1
S1
D1
G1
D1
S2
D2
G2
D2
G1
G2
S1
Top View
Pin Configuration
Top View
D2
S2
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMP3036SSD-13
Notes:
Case
SO-8
Packaging
2,500 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
8
5
= Manufacturer’s Marking
P3036SD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 14 = 2014)
WW = Week (01 - 53)
P 3036SD
YY WW
1
DMP3036SSD
Document number: DS37349 Rev.1 - 2
4
1 of 6
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November 2014
© Diodes Incorporated
DMP3036SSD
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
TC = +25°C
TC = +70°C
TA = +25°C
TA = +70°C
PRODUCT
NEW
PRODUCT
NEW
Continuous Drain Current (Note 6) VGS = -10V
ID
Unit
V
V
A
-10.6
-8.5
-80
-3.6
-17.5
64
ID
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 7) L = 0.3mH
Avalanche Energy (Note 7) L = 0.3mH
Value
-30
±25
-18.0
-14.3
IDM
IS
IAS
EAS
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
TA = +25°C
Total Power Dissipation (Note 5)
PD
TA = +70°C
Steady State
t<10s
TA = +25°C
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
RJA
PD
RθJC
1.1
72
37
13
TJ, TSTG
-55 to +150
TA = +70°C
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Electrical Characteristics
Value
1.2
0.9
104
45
1.7
Units
W
°C/W
W
°C/W
°C
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-30
-
-
-1.0
±100
V
μA
nA
VGS = 0V, ID = -1mA
VDS = -30V, VGS = 0V
VGS = ±25V, VDS = 0V
VGS(th)
RDS (ON)
-3.0
20
29
-1.0
mΩ
VSD
-1.7
16
22
-0.7
V
Static Drain-Source On-Resistance
-1.0
-
VDS = VGS, ID = -250μA
VGS = -10V, ID = -9A
VGS = -5V, ID = -7A
VGS = 0V, IS = -1A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
1931
226
168
10.9
8.8
16.5
2.6
3.6
8.2
14
65
31.6
-
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at VGS = -5V
Total Gate Charge at VGS = -10V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
V
Test Condition
VDS = -15V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = -15V, ID = -10A
VDS = -15V, ID = -10A
VGEN = -10V, VDD = -15V,
RGEN = 3Ω, ID = -10A
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMP3036SSD
Document number: DS37349 Rev.1 - 2
2 of 6
www.diodes.com
November 2014
© Diodes Incorporated
DMP3036SSD
30
30
VGS = -3.5V
VDS = -5.0V
25
ID , DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = -4.0V
VGS = -4.5V
20
VGS = -5.0V
15
VGS = -10V
VGS = -3.0V
10
20
15
T A = 150°C
TA = 125°C
10
T A = 85°C
5
5
T A = 25°C
VGS = -2.5V
VGS = -2.0V
1
2
3
4
VDS , DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
0.03
0.028
0.026
0.024
0.022
0.02
0.018
VGS = -5.0V
0.016
0.014
VGS = -10V
0.012
0.01
VGS = -20V
0.008
0.006
0.004
0.002
0
0
5
10
15
20
25
30
T A = -55° C
0
0
5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( )
RD S(ON ), DRAIN-SOURCE ON-RESISTANCE ()
0
0
1
2
3
4
V GS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
5
0.1
I D = -10A
0.09
0.08
0.07
0.06
ID = -11A
0.05
0.04
0.03
0.02
0.01
I D = -5A
0
0
ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.04
5
10
15
20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
25
1.6
VGS = -4.5V
0.035
0.03
TA = 125°C
T A = 150°C
0.025
T A = 85°C
0.02
TA = 25°C
T A = -55°C
0.015
0.01
0.005
0
0
RDS(ON), DRAI N-SO URCE
ON-RESISTANCE (NORMALIZED)
RD S(ON ), DRAIN-SOURCE ON-RESISTANCE ()
PRODUCT
NEW
PRODUCT
NEW
25
VGS = -20V
1.4
I D = -10A
1.2
VGS = -10V
1
I D = -5A
0.8
VGS = -5V
I D = -3A
5
10
15
20
25
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
DMP3036SSD
Document number: DS37349 Rev.1 - 2
30
0.6
-50
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
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November 2014
© Diodes Incorporated
DMP3036SSD
0.025
VGS = -10.0V
VGS = -5.0V
I D = -5.0A
ID = -3.0A
VGS(TH), G ATE THRESHO LD VO LTAGE (V)
RDS(o n), DRAIN-SOURCE O N-RESI STANCE ()
2.5
0.02
0.015
VGS = -20.0V
ID = -10.0A
0.01
0.005
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
30
2.3
2.1
I D = -1mA
1.9
1.7
I D = -250µA
1.5
1.3
1.1
0.9
0.7
0.5
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
10000
T A = 150°C
1000
20
I DSS, LEAKAGE CURRENT (nA)
IS, SOURCE CURRENT (A)
25
TA = 150°C
15
T A= 125°C
10
TA = 85°C
TA = -55°C
0
TA = 125°C
100
T A = 85°C
10
T A = 25°C
1
T A= 25°C
5
0
0.1
0.3
0.6
0.9
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
0
1.5
5
10
15
20
25
30
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Drain-Source Leakage Current
vs. Voltage
10
10000
VGS GATE THRESHOLD VOLTAGE (V)
f = 1MHz
CT , JUNCTION CAPACITANCE (pF)
PRODUCT
NEW
PRODUCT
NEW
0.03
Ciss
1000
C oss
C rss
100
10
0
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11 Typical Junction Capacitance
DMP3036SSD
Document number: DS37349 Rev.1 - 2
30
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VDS = -15V
8
I D = -10A
6
4
2
0
0
2
4
6
8 10 12 14 16
Qg, TOTAL GATE CHARGE (nC)
Figure 12 Gate Charge
18
20
November 2014
© Diodes Incorporated
DMP3036SSD
r(t), TRANSIENT THERMAL RESISTANCE
0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
Rthja(t) = r(t) * R thja
Rthja = 104°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIMES (sec)
Figure 13 Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
0.254
PRODUCT
NEW
PRODUCT
NEW
1D=
E1 E
A1
L
SO-8
Dim
Min
Max
A
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
0.35
L
0.62
0.82

0
8
All Dimensions in mm
Gauge Plane
Seating Plane
Detail ‘A’
7°~9°
h
45°
Detail ‘A’
A2 A A3
b
e
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
Dimensions
X
Y
C1
C2
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
Y
DMP3036SSD
Document number: DS37349 Rev.1 - 2
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November 2014
© Diodes Incorporated
DMP3036SSD
IMPORTANT NOTICE
PRODUCT
NEW
PRODUCT
NEW
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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website, harmless against all damages.
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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DMP3036SSD
Document number: DS37349 Rev.1 - 2
6 of 6
www.diodes.com
November 2014
© Diodes Incorporated