DMP3036SSD P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V(BR)DSS RDS(on) max -30V 20mΩ @ VGS = -10V 29mΩ @ VGS = -5V ID TC = +25°C -18.0A -15.0A PRODUCT NEW PRODUCT NEW Description Applications Power Management Functions Backlighting Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) making it ideal for high efficiency power management applications. DC-DC Converters Low On-Resistance Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 e3 Weight: 0.074 grams (Approximate) SO-8 D1 SO-8 Pin1 S1 D1 G1 D1 S2 D2 G2 D2 G1 G2 S1 Top View Pin Configuration Top View D2 S2 Equivalent Circuit Ordering Information (Note 4) Part Number DMP3036SSD-13 Notes: Case SO-8 Packaging 2,500 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. Marking Information 8 5 = Manufacturer’s Marking P3036SD = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 14 = 2014) WW = Week (01 - 53) P 3036SD YY WW 1 DMP3036SSD Document number: DS37349 Rev.1 - 2 4 1 of 6 www.diodes.com November 2014 © Diodes Incorporated DMP3036SSD Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TC = +25°C TC = +70°C TA = +25°C TA = +70°C PRODUCT NEW PRODUCT NEW Continuous Drain Current (Note 6) VGS = -10V ID Unit V V A -10.6 -8.5 -80 -3.6 -17.5 64 ID Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Avalanche Current (Note 7) L = 0.3mH Avalanche Energy (Note 7) L = 0.3mH Value -30 ±25 -18.0 -14.3 IDM IS IAS EAS A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C Total Power Dissipation (Note 5) PD TA = +70°C Steady State t<10s TA = +25°C Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) RJA PD RθJC 1.1 72 37 13 TJ, TSTG -55 to +150 TA = +70°C Steady State t<10s Thermal Resistance, Junction to Ambient (Note 6) RθJA Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics Value 1.2 0.9 104 45 1.7 Units W °C/W W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 - - -1.0 ±100 V μA nA VGS = 0V, ID = -1mA VDS = -30V, VGS = 0V VGS = ±25V, VDS = 0V VGS(th) RDS (ON) -3.0 20 29 -1.0 mΩ VSD -1.7 16 22 -0.7 V Static Drain-Source On-Resistance -1.0 - VDS = VGS, ID = -250μA VGS = -10V, ID = -9A VGS = -5V, ID = -7A VGS = 0V, IS = -1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 1931 226 168 10.9 8.8 16.5 2.6 3.6 8.2 14 65 31.6 - pF pF pF Ω nC nC nC nC ns ns ns ns Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at VGS = -5V Total Gate Charge at VGS = -10V Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: V Test Condition VDS = -15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -15V, ID = -10A VDS = -15V, ID = -10A VGEN = -10V, VDD = -15V, RGEN = 3Ω, ID = -10A 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMP3036SSD Document number: DS37349 Rev.1 - 2 2 of 6 www.diodes.com November 2014 © Diodes Incorporated DMP3036SSD 30 30 VGS = -3.5V VDS = -5.0V 25 ID , DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = -4.0V VGS = -4.5V 20 VGS = -5.0V 15 VGS = -10V VGS = -3.0V 10 20 15 T A = 150°C TA = 125°C 10 T A = 85°C 5 5 T A = 25°C VGS = -2.5V VGS = -2.0V 1 2 3 4 VDS , DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0.03 0.028 0.026 0.024 0.022 0.02 0.018 VGS = -5.0V 0.016 0.014 VGS = -10V 0.012 0.01 VGS = -20V 0.008 0.006 0.004 0.002 0 0 5 10 15 20 25 30 T A = -55° C 0 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) RD S(ON ), DRAIN-SOURCE ON-RESISTANCE () 0 0 1 2 3 4 V GS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 0.1 I D = -10A 0.09 0.08 0.07 0.06 ID = -11A 0.05 0.04 0.03 0.02 0.01 I D = -5A 0 0 ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.04 5 10 15 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 25 1.6 VGS = -4.5V 0.035 0.03 TA = 125°C T A = 150°C 0.025 T A = 85°C 0.02 TA = 25°C T A = -55°C 0.015 0.01 0.005 0 0 RDS(ON), DRAI N-SO URCE ON-RESISTANCE (NORMALIZED) RD S(ON ), DRAIN-SOURCE ON-RESISTANCE () PRODUCT NEW PRODUCT NEW 25 VGS = -20V 1.4 I D = -10A 1.2 VGS = -10V 1 I D = -5A 0.8 VGS = -5V I D = -3A 5 10 15 20 25 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMP3036SSD Document number: DS37349 Rev.1 - 2 30 0.6 -50 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature 3 of 6 www.diodes.com -25 November 2014 © Diodes Incorporated DMP3036SSD 0.025 VGS = -10.0V VGS = -5.0V I D = -5.0A ID = -3.0A VGS(TH), G ATE THRESHO LD VO LTAGE (V) RDS(o n), DRAIN-SOURCE O N-RESI STANCE () 2.5 0.02 0.015 VGS = -20.0V ID = -10.0A 0.01 0.005 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 7 On-Resistance Variation with Temperature 30 2.3 2.1 I D = -1mA 1.9 1.7 I D = -250µA 1.5 1.3 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 10000 T A = 150°C 1000 20 I DSS, LEAKAGE CURRENT (nA) IS, SOURCE CURRENT (A) 25 TA = 150°C 15 T A= 125°C 10 TA = 85°C TA = -55°C 0 TA = 125°C 100 T A = 85°C 10 T A = 25°C 1 T A= 25°C 5 0 0.1 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 0 1.5 5 10 15 20 25 30 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Drain-Source Leakage Current vs. Voltage 10 10000 VGS GATE THRESHOLD VOLTAGE (V) f = 1MHz CT , JUNCTION CAPACITANCE (pF) PRODUCT NEW PRODUCT NEW 0.03 Ciss 1000 C oss C rss 100 10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11 Typical Junction Capacitance DMP3036SSD Document number: DS37349 Rev.1 - 2 30 4 of 6 www.diodes.com VDS = -15V 8 I D = -10A 6 4 2 0 0 2 4 6 8 10 12 14 16 Qg, TOTAL GATE CHARGE (nC) Figure 12 Gate Charge 18 20 November 2014 © Diodes Incorporated DMP3036SSD r(t), TRANSIENT THERMAL RESISTANCE 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 Rthja(t) = r(t) * R thja Rthja = 104°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIMES (sec) Figure 13 Transient Thermal Resistance Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 0.254 PRODUCT NEW PRODUCT NEW 1D= E1 E A1 L SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X Dimensions X Y C1 C2 C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMP3036SSD Document number: DS37349 Rev.1 - 2 5 of 6 www.diodes.com November 2014 © Diodes Incorporated DMP3036SSD IMPORTANT NOTICE PRODUCT NEW PRODUCT NEW DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2014, Diodes Incorporated www.diodes.com DMP3036SSD Document number: DS37349 Rev.1 - 2 6 of 6 www.diodes.com November 2014 © Diodes Incorporated