DMG4800LK3 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability • • • • Case: TO252 (DPAK) Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (approximate) D D TO252 G D G Top View S S Top View Pin-Out Equivalent Circuit Ordering Information (Note 4) Part Number DMG4800LK3-13 Notes: Case TO252 Packaging 2500 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information N4800L YYWW DMG4800LK3 Document number: DS31959 Rev. 3 - 2 = Manufacturer’s Marking N4800L = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01 - 53) 1 of 6 www.diodes.com November 2012 © Diodes Incorporated DMG4800LK3 Maximum Ratings (@TA = +25°C, unless otherwise specified.) NEW PRODUCT Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) Unit V V IDM Value 30 ±25 10.0 6.5 48 Symbol PD RθJA TJ, TSTG Value 1.71 72.9 -55 to +150 Unit W °C/W °C TA = +25°C TA = +85°C Steady State ID Pulsed Drain Current (Note 6) A A Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 30 - - 1.0 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 0.8 - 1.6 V RDS (ON) - 12 16 17 24 mΩ |Yfs| VSD - 10 0.7 1.0 S V VDS = VGS, ID = 250μA VGS = 10V, ID = 9A VGS = 4.5V, ID = 7A VDS = 10V, ID = 9A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 798 128 122 1.37 8.7 1.7 2.4 5.03 4.50 26.33 8.55 - pF pF pF Ω nC nC nC ns ns ns ns VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 5V, VDS = 15V, ID = 9A VDD = 15V, VGS = 10V, RL = 15Ω, RG = 6Ω, ID = 1A 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMG4800LK3 Document number: DS31959 Rev. 3 - 2 2 of 6 www.diodes.com November 2012 © Diodes Incorporated DMG4800LK3 30 30 VGS = 4.0V VGS = 4.5V 25 VDS = 5.0V 25 ID, DRAIN CURRENT(A) ID, DRAIN CURRENT (A) VGS = 3.0V 20 15 10 VGS = 2.5V 20 15 TA = 150°C 10 T A = 125°C TA = 85°C 5 5 VGS = 1.8V TA = 25°C VGS = 2.0V T A = -55°C 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig.1 Typical Output Characteristics 2 RDS(on) DRAIN SOURCE ON-RESISTANCE (Ω) 1 0.1 VGS = 2.5V VGS = 4.5V 0.01 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1.6 30 1.4 VGS = 10A ID = 10A 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature Document number: DS31959 Rev. 3 - 2 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE SOURCE VOLTAGE(V) Fig. 2 Typical Transfer Characteristics 4 0.05 VGS = 4.5V 0.04 0.03 TA = 150°C TA = 125°C TA = 85°C 0.02 TA = 25°C 0.01 TA = -55°C 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.05 VGS = 4.5A ID = 5A DMG4800LK3 0 0 RDS(ON) STATIC DRAIN SOURCE ON-STATE RESISTANCE (Ω) RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 RDS(ON), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) NEW PRODUCT VGS = 3.5V 3 of 6 www.diodes.com 0.04 0.03 VGS = 4.5A ID = 5A 0.02 0.01 0 -50 VGS = 10A ID = 10A -25 0 25 50 75 100 125 150 TA AMBIENT TEMPERATURE (°C) Fig. 6 Typical Static Drain-Source On-State Resistance vs. Ambient Temperature November 2012 © Diodes Incorporated DMG4800LK3 100,000 IDSS, LEAKAGE CURRENT (nA) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.6 1.2 ID = 1mA ID = 250µA 0.8 0.4 0 -50 10,000 TA = 150°C 1,000 TA = 85°C 10 1 TA = 25°C TA = -55°C 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 8 Typical Drain-Source Leakage Current vs Voltage -25 0 1,000 IGSS, LEAKAGE CURRENT(nA) 20 IS, SOURCE CURRENT (A) TA = 125°C 100 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature TA = 25°C 16 12 8 4 100 TA = 85°C TA = 125°C TA = 150°C 10 TA = 25°C TA = -55°C 1 0 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Diode Forward Voltage vs. Current 1.2 0 4 8 12 16 20 VGS, GATE SOURCE VOLTAGE(V) Fig. 10 Gate-Source Leakage Current vs. Voltage 1,000 100 100 TA = 125°C T A = 150°C TA = 85°C 10 TA = -55°C TA = 25°C 1 0 4 8 12 16 20 VGS, GATE SOURCE VOLTAGE(V) Fig. 11 Gate-Source Leakage Current vs. Voltage DMG4800LK3 Document number: DS31959 Rev. 3 - 2 90 P(pk), PEAK TRANSIENT POWER (W) IGSS, LEAKAGE CURRENT(nA) NEW PRODUCT 2.0 80 Single Pulse RθJA = 77°C/W RθJA(t) = RθJA * r(t) TJ - TA = P * RθJA(t) 70 60 50 40 30 20 10 0 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (s) Fig. 12 Single Pulse Maximum Power Dissipation 4 of 6 www.diodes.com November 2012 © Diodes Incorporated DMG4800LK3 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 77°C/W D = 0.02 0.01 D = 0.01 P(pk) t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 t1 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 13 Transient Thermal Response 10 100 1,000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. E TO252 Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 − − e 2.286 − − E 6.45 6.70 6.58 E1 4.32 − − H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° − All Dimensions in mm A b3 c2 L3 A2 D E1 H L4 A1 L e 2X b2 3X b a Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X2 Y2 C Y1 X1 DMG4800LK3 Document number: DS31959 Rev. 3 - 2 Z Dimensions Z X1 X2 Y1 Y2 C E1 Value (in mm) 11.6 1.5 7.0 2.5 7.0 6.9 2.3 E1 5 of 6 www.diodes.com November 2012 © Diodes Incorporated DMG4800LK3 NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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