DMG4800LFG N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Case: DFN3030-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - NiPdAu over Copper lead frame. Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Marking Information: See Page 5 Ordering Information: See Page 5 Weight: 0.0172 grams (approximate) • • • • • • 8 7 6 5 5 6 7 8 S 2 S 1 D 2 1 TOP VIEW BOTTOM VIEW 3 G 4 4 S 3 BOTTOM VIEW Pin Configuration TOP VIEW Internal Schematic Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 3) Symbol VDSS VGSS Steady State TA = 25°C TA = 85°C ID Pulsed Drain Current (Note 4) Value 30 ±25 7.44 4.82 Units V V A IDM 40 A Symbol PD RθJA TJ, TSTG Value 0.94 133 -55 to +150 Unit W °C/W °C Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB with minimum recommended pad layout. 4. Repetitive rating, pulse width limited by junction temperature. DMG4800LFG Document number: DS31785 Rev. 3 - 2 1 of 6 www.diodes.com November 2009 © Diodes Incorporated DMG4800LFG @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 30 - - 1.0 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 0.8 - 1.5 V RDS (ON) - 11 15 17 24 mΩ |Yfs| VSD - 8 0.7 1.0 S V VDS = VGS, ID = 250μA VGS = 10V, ID = 9A VGS = 4.5V, ID = 7A VDS = 10V, ID = 9A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 798 128 122 1.37 9.47 1.87 5.60 5.03 4.50 26.33 8.55 - pF pF pF Ω nC nC nC ns ns ns ns VDS = 10V, VGS = 0V, f = 1.0MHz VDS =0V, VGS = 0V, f = 1MHz VGS = 5V, VDS = 15V, ID = 9A VDD = 15V, VGEN = 10V, RL = 15Ω, RG = 6Ω, ID = 1A 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to product testing. 30 30 VGS = 10V 25 VDS = 5V 25 VGS = 4.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics 20 VGS = 3.0V 15 10 VGS = 2.5V 5 20 15 10 TA = 150°C TA = 125°C 5 TA = -55°C VGS = 2.0V 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DMG4800LFG Document number: DS31785 Rev. 3 - 2 TA = 85°C TA = 25°C 0 2 2 of 6 www.diodes.com 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 3 November 2009 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.08 0.07 0.06 VGS = 2.5V 0.05 0.04 0.03 0.02 VGS = 4.5V 0.01 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage TA = 150°C TA = 125°C 0.02 TA = 85°C TA = 25°C 0.01 TA = -55°C 0 0 RDSON , DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.4 1.2 VGS = 4.5V ID = 10A 0.8 0.6 -50 VGS = 4.5V 5 10 15 20 ID, DRAIN CURRENT (A) 25 30 Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.6 1.0 0.03 30 1.8 VGS = 10V ID = 11.6A 0.03 0.025 0.02 VGS = 4.5V ID = 10A 0.015 0.01 VGS = 10V ID = 11.6A 0.005 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature Fig. 5 On-Resistance Variation with Temperature 1.6 20 TA = 25°C IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMG4800LFG ID = 1mA 1.2 ID = 250µA 0.8 0.4 16 12 8 4 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMG4800LFG Document number: DS31785 Rev. 3 - 2 3 of 6 www.diodes.com 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current November 2009 © Diodes Incorporated DMG4800LFG VGS, GATE-SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 10 1,000 Ciss Coss 100 Crss 10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 8 6 ID = 11.6A ID = 9A 4 2 0 30 0 2 4 6 8 10 12 14 16 QG, TOTAL GATE CHARGE (nC) Fig. 10 Total Gate Charge 100 10,000 P(pk), PEAK TRANSIENT POWER (W) T A = 150°C IDSS, LEAKAGE CURRENT (nA) 1,000 T A = 125°C 100 T A = 85°C 10 TA = 25°C 1 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) 90 Single Pulse RθJA = 131°C/W RθJA(t) = r(t) * RθJA TJ - TA = P * RθJA(t) 80 70 60 50 40 30 20 10 T A = -55°C 0 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (s) Fig. 12 Single Pulse Maximum Power Dissipation 30 Fig. 11 Typical Leakage Current vs. Drain-Source Voltage 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 10,000 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 131°C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 T J - T A = P * RθJA(t) Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.00001 0.0001 DMG4800LFG Document number: DS31785 Rev. 3 - 2 t1 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 13 Transient Thermal Response 4 of 6 www.diodes.com 10 100 1,000 November 2009 © Diodes Incorporated DMG4800LFG Ordering Information (Note 7) Part Number DMG4800LFG-7 Packaging 3000/Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information DFN3030-8 YYWW NEW PRODUCT Notes: Case DFN3030-8 N48 = Product marking code YYWW = Date code marking YY = Last digit of year (ex: 09 for 2009) WW = Week code 01 to 52 N48 Package Outline Dimensions A A3 SEATING PLANE A1 e b .2 R0 E 00 E2 L D2 DFN3030-8 Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.02 A3 0.15 ⎯ ⎯ b 0.29 0.39 0.34 D 2.90 3.10 3.00 D2 2.19 2.39 2.29 e 0.65 ⎯ ⎯ E 2.90 3.10 3.00 E2 1.64 1.84 1.74 L 0.30 0.60 0.45 All Dimensions in mm D Suggested Pad Layout Z Dimensions Value (in mm) Z 2.59 G 0.11 X1 2.49 X2 0.65 Y 0.39 C 0.65 X1 X2 G Y DMG4800LFG Document number: DS31785 Rev. 3 - 2 C 5 of 6 www.diodes.com November 2009 © Diodes Incorporated DMG4800LFG NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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