DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) max -20V 42.5mΩ @ VGS = -4.5V 71mΩ @ VGS = -1.8V Features • • • • • • • • ID TA = 25°C -4.0A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications • • DC-DC Converters Power management functions Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 3kV Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • • • • • • • • Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ۛ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 Terminals Connections: See Diagram Below Weight: 0.008 grams (approximate) Drain SOT23 D Gate G ESD PROTECTED TO 3kV Top View S Top View Internal Schematic Gate Protection Diode Source Equivalent Circuit Ordering Information (Note 4) Part Number DMG3415U-7 DMG3415UQ-7 DMG3415U-13 Notes: Qualification Commercial Automotive Commercial Case SOT23 SOT23 SOT23 Packaging 3,000/Tape & Reel 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. 34P YW Marking Information 34P = Product Type Marking Code YW = Date Code Marking Y = Year (ex: W = 2009) W = Week (ex: A ~ Z = Weeks 1 ~ 26 a ~ y = Weeks 27 ~ 51 z = Weeks 52 and 53) DMG3415U-7 DMG3415U Document number: DS31735 Rev. 9 - 2 1 of 6 www.diodes.com October 2012 © Diodes Incorporated DMG3415U Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = -4.5V Units V V IDM Value -20 ±8 -4.0 -3.5 -30 Symbol PD RθJA RθJC TJ, TSTG Value 0.9 139 32 -55 to +150 Units W °C/W °C/W °C TA = +25°C TA = +70°C Steady State ID Pulsed Drain Current (10μs pulse, duty cycle = 1%) A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to case (Note 5) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1 ±10 µA VGS(th) Static Drain-Source On-Resistance RDS (ON) -0.3 ⎯ ⎯ ⎯ Forward Transfer Admittance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistnace SWITCHING CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time |Yfs| −0.55 31 40 51 3 -1.0 42.5 53 71 ⎯ 294 104 25 250 ⎯ ⎯ ⎯ 9.1 1.5 1.7 71 117 795 393 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Notes: Ciss Coss Crss Rg ⎯ ⎯ ⎯ Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ V µA V mΩ S pF pF pF Ω nC nC nC ns ns ns ns Test Condition VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±8.0V, VDS = 0V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -4.0A VGS = -2.5V, ID = -3.5A VGS = -1.8V, ID = -2.0A VDS = -5V, ID = -4A VDS = -10V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VGS = -4.5V, VDS = -10V ID = -4A VDS = -10V, VGS = -4.5V, RD = 2.5Ω, RG = 3.0Ω, ID = -1A 5. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout. 6. Short duration pulse test used to minimize self-heating effect. . DMG3415U Document number: DS31735 Rev. 9 - 2 2 of 6 www.diodes.com October 2012 © Diodes Incorporated DMG3415U 20 VGS = 2.5V 16 16 VGS = 2.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 20 VGS = 4.5V VGS = 3.5V VGS = 3.0V 12 8 VGS = 1.5V VDS = 5V 12 8 T A = 150°C 4 4 TA = 125°C TA = 85°C TA = 25°C 0 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 5 0.07 0.06 0.05 VGS = 2.5V 0.04 VGS = 4.5V 0.03 0.02 0.01 0 0 4 8 12 16 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 4.5V ID = 10A VGS = 2.5V ID = 5A -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Document number: DS31735 Rev. 9 - 2 VGS = 4.5V 0.06 TA = 150°C 0.05 TA = 125°C 0.04 TA = 85°C TA = 25°C 0.03 TA = -55°C 0.02 0.01 0 4 8 12 16 ID, DRAIN CURRENT (A) 20 0.08 0.07 0.06 VGS = 2.5V ID = 5A 0.05 0.04 0.03 VGS = 4.5V ID = 10A 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature Fig. 5 On-Resistance Variation with Temperature DMG3415U 0.07 0 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) 1.2 0.6 -50 2.5 Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.4 0.8 1 1.5 2 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 0.08 20 1.6 1.0 0.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1 0.08 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) T A = -55°C 0 0 3 of 6 www.diodes.com October 2012 © Diodes Incorporated DMG3415U 20 18 16 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.2 0.9 ID = 1mA 0.6 ID = 250µA 0.3 14 12 10 TA = 25°C 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 IDSS, LEAKAGE CURRENT (nA) 100,000 10,000 TA = 150°C TA = 125°C 1,000 T A = 85°C 100 10 TA = 25°C TA = -55°C 1 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Leakage Current vs. Drain-Source Voltage r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 171°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 T J - T A = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 DMG3415U Document number: DS31735 Rev. 9 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 10 Transient Thermal Response 4 of 6 www.diodes.com 10 100 1,000 October 2012 © Diodes Incorporated DMG3415U Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A B C H K M K1 D J F L G SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X DMG3415U Document number: DS31735 Rev. 9 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 5 of 6 www.diodes.com October 2012 © Diodes Incorporated DMG3415U IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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