DMN1029UFDB - Diodes Incorporated

DMN1029UFDB
N-CHANNEAL ENHANCEMENT MODE MOSFET
Features
V(BR)DSS
RDS(ON) Max
ID MAX
TA = +25°C
12V
29mΩ @ VGS = 4.5V
34mΩ @ VGS = 2.5V
44mΩ @ VGS = 1.8V
65mΩ @ VGS = 1.5V
5.6A
5.1A
4.5A
3.7A





Low On-Resistance
Low Input Capacitance
Low Profile, 0.6mm Max Height
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
Mechanical Data
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.




Applications





Load Switch
Power Management Functions
Portable Power Adaptors
Case: U-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208 e4
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (Approximate)
D1
U-DFN2020-6
D2
S2
G2
D2
D1
G1
D1
G2
D2
G1
S1
S1
S2
Pin1
Bottom View
Q1 N-CHANNEL MOSFET
Q2 N-CHANNEL MOSFET
Internal Schematic
Ordering Information (Note 4)
Part Number
DMN1029UFDB -7
DMN1029UFDB -13
Notes:
Case
U-DFN2020-6
U-DFN2020-6
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
D5
Date Code Key
Year
Code
Month
Code
2015
C
Jan
1
2016
D
Feb
2
DMN1029UFDB
Document number: DS37711 Rev. 2 - 2
Mar
3
D5 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
YM
NEW PRODUCT
Product Summary
2017
E
Apr
4
May
5
2018
F
Jun
6
1 of 6
www.diodes.com
2019
G
Jul
7
Aug
8
2020
H
Sep
9
Oct
O
2021
I
Nov
N
Dec
D
February 2015
© Diodes Incorporated
DMN1029UFDB
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
NEW PRODUCT
t < 5s
TA = +25C
TA = +70C
TA = +25C
TA = +70C
Value
12
±8
5.6
4.4
ID
A
7.2
5.8
1
20
15
12
ID
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10s pulse, Duty Cycle = 1%)
Avalanche Current (L = 0.1mH)
Avalanche Energy (L = 0.1mH)
Unit
V
V
IS
IDM
IAS
EAS
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Symbol
Steady State
t < 5s
Steady State
t < 5s
Value
1.4
2.2
91
55
20
-55 to +150
PD
RJA
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
RJC
TJ, TSTG
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
12






1.0
±100
V
μA
nA
VGS = 0V, ID = 250μA
VDS = 12V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS(TH)
RDS(ON)

17
20
24
30
0.6
1
29
34
44
65
1.2
V
Static Drain-Source On-Resistance
0.4





mΩ
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 5A
VGS = 2.5V, ID = 4.6A
VGS = 1.8V, ID = 4.1A
VGS = 1.5V, ID = 2A
VGS = 0V, IS = 1A












914
132
119
1.26
10.5
19.6
1.2
1.6
5.0
10.5
16.6
4.1












pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
V
Test Condition
VDS = 6V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 6V, ID = 6.5A
VDD = 6V, VGS = 4.5V,
RL = 1.2Ω, RG = 1Ω
5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMN1029UFDB
Document number: DS37711 Rev. 2 - 2
2 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DMN1029UFDB
20
20.0
VGS=1.8V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS=1.5V
VGS=2.0V
16.0
14.0
VGS=2.5V
12.0
VGS=3.0V
10.0
VGS=4.5V
8.0
VGS=1.2V
VGS=8.0V
6.0
16
14
12
10
8
TA=150℃
6
TA=125℃
TA=25℃
4
2.0
TA=85℃
2
VGS=1.0V
0.0
TA=-55℃
0
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
5
0
0.05
0.04
VGS=1.5V
VGS=1.8V
0.03
VGS=2.5V
0.02
VGS=4.5V
0.01
0
1
3
5
7
9
11 13 15 17 19 21
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(Ω)
VDS= 5.0V
18
4.0
0.03
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
2
0.1
0.08
ID=5.0A
0.06
ID=4.1A
0.04
ID=2.0A
ID=4.6A
0.02
0
1
2
3
4
5
6
7
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
8
1.8
VGS= 4.5V
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
NEW PRODUCT
18.0
TA=150℃
0.025
TA=125℃
0.02
TA=85℃
0.015
TA=25℃
0.01
TA=-55℃
0.005
0
2
4
6
8
10
12
14
16
18
20
ID, DRAIN CURRENT(A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
DMN1029UFDB
Document number: DS37711 Rev. 2 - 2
3 of 6
www.diodes.com
1.6
VGS=2.5V, ID=3.0A
1.4
1.2
VGS=4.5V, ID=5.0A
1
0.8
0.6
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
February 2015
© Diodes Incorporated
0.035
0.03
VGS=2.5V, ID=3.0A
0.025
0.02
0.015
1
VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.04
VGS=4.5V, ID=5.0A
0.01
0.005
0.9
0.8
0.7
ID=1mA
0.6
0.5
0.4
ID=250μA
0.3
0.2
0.1
0
0
-50
-25
0
25
50
75
100
125
150
-50
20
0
25
50
75
100
125
150
10000
CT, JUNCTION CAPACITANCE (pF)
18
IS, SOURCE CURRENT (A)
-25
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
16
14
12
VGS=0V
TA=150℃
10
8
VGS=0V
TA=85℃
VGS=0V
TA=125℃
6
VGS=0V
TA=25℃
4
2
f=1MHz
Ciss
1000
Coss
100
Crss
VGS=0V, TA=-55℃
0
0
0.3
0.6
0.9
1.2
10
1.5
0
2
4
6
8
10
12
VDS, DRAIN-SOURCE Voltage (V)
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 10. Typical Junction Capacitance
Figure 9. Diode Forward Voltage vs. Current
100
8
ID, DRAIN CURRENT (A)
RDS(ON) Limited
VGS, GATE-SOURCE VOLTAGE (V)
NEW PRODUCT
DMN1029UFDB
6
VDS=6V, ID=6.5A
4
PW =100μs
PW =100
ms
10
PW =1s
PW =10ms
1
0.1
2
PW =1ms
TJ(Max)=150℃
TA=25℃
Single Pulse
DUT on
1*MRP board
VGS=4.5V
PW =10s
DC
0.01
0
0
5
10
15
Qg, TOTAL GATE CHARGE (nC)
Figure 11. Gate Charge
DMN1029UFDB
Document number: DS37711 Rev. 2 - 2
20
4 of 6
www.diodes.com
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
February 2015
© Diodes Incorporated
DMN1029UFDB
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
1
D=0.5
D=0.9
D=0.3
D=0.7
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
RθJA(t)=r(t) * RθJA
RθJA=171℃/W
Duty Cycle, D=t1 / t2
D=Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
A
A3
SEATING PLANE
A1
D
Pin#1 ID
D2
z
d
E
E2
f
f
L
e
DMN1029UFDB
Document number: DS37711 Rev. 2 - 2
b
5 of 6
www.diodes.com
U-DFN2020-6
Type B
Dim
Min
Max Typ
A
0.545 0.605 0.575
A1
0
0.05 0.02
A3
0.13


b
0.20 0.30 0.25
D
1.95 2.075 2.00
d
0.45


D2
0.50 0.70 0.60
e
0.65


E
1.95 2.075 2.00
E2
0.90 1.10 1.00
f
0.15


L
0.25 0.35 0.30
z

 0.225
All Dimensions in mm
February 2015
© Diodes Incorporated
DMN1029UFDB
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C
Y
Dimensions Value (in mm)
Z
1.67
G
0.20
G1
0.40
X1
1.0
X2
0.45
Y
0.37
Y1
0.70
C
0.65
G
X2
G1
NEW PRODUCT
X1
G
Y1
Z
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
DMN1029UFDB
Document number: DS37711 Rev. 2 - 2
6 of 6
www.diodes.com
February 2015
© Diodes Incorporated