MB85RC04V

FUJITSU SEMICONDUCTOR
DS501-00016-4v0-J
DATA SHEET
FRAM
4 K (512×8)
I2C
MB85RC04V
■
MB85RC04V
×8
MB85RC04V
MB85RC04V
MB85RC04V
,
CMOS
FRAM (Ferroelectric Random Access Memory:
, SRAM
/
1012
E2PROM
,
,
,1
,
■
2
/
:512
×8
: (SCL)
:1 MHz (Max)
/
:1012
:10 (
85 °C), 95 (
55 °C), 200 (
:3.0 V 5.5 V
:
90 μA (Typ @ 1 MHz)
5
μA (Typ)
: 40 °C
85 °C
:
SOP, 8 (FPT-8P-M02)
RoHS
Copyright 2012-2015 FUJITSU SEMICONDUCTOR LIMITED
2015.5
512
)
(SDA)
2
35 °C)
MB85RC04V
■
(TOP VIEW)
NC
1
8
VDD
A1
2
7
WP
A2
3
6
SCL
VSS
4
5
SDA
(FPT-8P-M02)
■
1
NC
,
, VDD
VSS
(
4
)
,
2, 3
A1, A2
VSS
•
•
VSS
4
VSS
5
SDA
6
SCL
VDD
, SDA
A1, A2
“L”
VDD, VSS
,
,
,
“H”
7
“L”
8
2
, “L”
,
WP
(
,
VSS
)
,
VDD
DS501-00016-4v0-J
MB85RC04V
■
-
SDA
FRAM
512×8
SCL
WP
/
/
A1, A2
■ I2C (Inter-Integrated Circuit)
MB85RC04V
,
,
, I2C
,2
,
,1
,
I
I2C
,
,
2
C
VDD
SCL
SDA
I2C
I2C
MB85RC04V
A2
0
DS501-00016-4v0-J
A1
0
I2C
MB85RC04V
A2
0
A1
1
I2C
MB85RC04V
A2
1
...
A1
0
3
MB85RC04V
■ I2C
I2C
,2
, SDA
SCL
,
SCL
“H”
I2C
“L”
, SCL
I2C
, SCL
“L”
SDA
“H”
“H”
, SDA
, SDA
“L”
“H”
“H”
,
,
,
,
,
SCL
SDA
H or L
Start
Stop
FRAM
■
(tWC)
,
(ACK)
2
IC
,
,
8
8
,
,
“L”
,
, NACK “H”
Master
1
SCL
2
3
8
SDA
,
,
9
ACK
9
Start
4
9
,
SDA
, ACK “L”
, Slave
,
SCL
8
9 ACK
,
,
Slave
ACK
,
,
,
8
(ACK
SDA
)
DS501-00016-4v0-J
MB85RC04V
■
MB85RC04V ,
9
Byte Write, Page Write, Random Read
9
Current Address Read
,
(1
)
(8
)
,
,
(1
(8
)
)
,
9
,
■
,8
,
,
,
(8
(1
(4
)
,
), Read/Write
(4
(1
)
),
(2
4
)
4
(2
,
“1010”
): A1, A2
(2
,
),
4
)
A2, A1
,
(1
,2
): A8
,
,
Read/Write
1
(1
)
8
, R/W (Read/Write)
“1010”
,
,
“0”
, “1”
,
/
Start
1
2
3
4
5
6
7
8
9
1
2
..
SCL
SDA
ACK
S
1
0
1
0
A2
A1
A8
R/W
..
A
Read/Write
S
A ACK (SDA
DS501-00016-4v0-J
“L”
)
5
MB85RC04V
■
,
ACK“L”
8
,
(8
)
,
, Byte Write, Page Write, Random Read
Current Address Read
,
ACK
,9
,
8
,
,
9
8
,
ACK“L”
ACK“L”
8
■ FRAM (Acknowledge Polling)
FRAM
E2PROM
,
ACK
,
*
,
,
(8
)
,9
■ (WP)
“H”
“L”
,
,
,
VSS
“H”
, WP
,
, “L”
“L” (
)
6
DS501-00016-4v0-J
MB85RC04V
■
Byte Write
(R/W “0”
ACK
S
,
)
,
1 0 1 0 A2 A1 A8 0 A
X
,
ACK
,
Address
Low 8bits
A
Write
Data 8bits
A P
X X X X X X XX
MSB
LSB
S
P
A ACK (SDA
Page Write
Byte Write
(
)
S
1 0 1 0 A2 A1 A8 0 A
, ACK
Address
Low 8bits
)
,
,
(000H)
,
, FRAM
“L”
, 512
, FRAM
A
Write
Data 8bits
A
Write
Data
...
A P
S
P
A
DS501-00016-4v0-J
ACK (SDA
“L”
)
7
MB85RC04V
Current Address Read
(
Stop
)
9
,
OFF
1
,
,
n
,
8
1
9
n
Current Address (
n
1
(000H)
,
)
n+1
S
1 0 1 0 A2 A1 A8 1 A
Read
Data 8bits
S
N P
P
A ACK (SDA
“L”
N NACK (SDA
Random Read
Write
(R/W “1”
)
, SCL
1
2
NACK (SDA
S
(
16FH
,
)
“H”
)
,
,
1
(
“H”
)
)
,
1 0 1 0 A2 A1 A8 0 A
Address
Low 8bits
A S
1 0 1 0 A2 A1 A8 1 A
Read
Data 8bits
N P
)
:
1B
01101111B
1B
S
P
A ACK (SDA
N NACK (SDA
8
“L”
“H”
)
)
DS501-00016-4v0-J
MB85RC04V
Sequential Read
Random Read
,
(R/W “1”
)
,
...
A
,
(000H)
Read
Data 8bits
A
...
Read
Data
A
,
Read
Data 8bits
N P
P
A ACK (SDA
“L”
N NACK (SDA
Device ID
Device ID
ID (12
a)
b)
,
)
,
ID
, Manufacturer ID (12
,
ID F8H
ID
ACK
,
,
ACK
,
d)
e) 3
3
ACK
ID
ID
,
)
)
Product
,
(1
c)
“H”
ID
3
)
)
,
Read/Write
Don't care
,
,
ID F9H
Data Byte 1st/2nd/3rd
NACK (SDA “H”
)
ACK
, Data Byte 1st
,
,
ID
Reserved
Reserved
R
S Slave ID A 1 0 1 0 A2 A1A8 / A S Slave ID A Data Byte A Data Byte A Data Byte N P
W
1st
2nd
3rd
(F8H)
(F9H)
S
P
A ACK (SDA
“L”
N NACK (SDA
Data Byte 1st
Manufacture ID = 00AH
Data Byte 2nd
)
“H”
)
Data Byte 3rd
Product ID = 010H
11 10
9
8 7 6 5 4 3
Fujitsu Semiconductor
2
1
0
11 10 9 8
Density = 0H
7
6
5 4 3 2
Proprietary use
1
0
0
0
0
0
1
0
0
0
0
0
0
0
0
DS501-00016-4v0-J
0
0
0
0
1
0
0
0
1
0
0
9
MB85RC04V
■
, I2C
, (1)
,
, (2)
,
,
,
,
(1)
SDA
“L”
,
SDA
,
“H”
,
9
“
1
“1””
SCL
SDA
Hi-Z
1
Read
(2)
I2C
10
Write
,
“1”
9
,
DS501-00016-4v0-J
MB85RC04V
■
*
VDD
0.5
*
VIN
0.5
VDD
0.5 (
6.0)
V
*
VOUT
0.5
VDD
0.5 (
6.0)
V
TA
40
85
°C
Tstg
55
125
°C
VSS
+6.0
V
0V
(
,
,
)
,
,
■
VDD
*1
TA
*2
1
2
VSS
3.0
40
⎯
5.5
⎯
V
°C
85
0V
,
,
,
,
,
,
,
DS501-00016-4v0-J
11
MB85RC04V
■
1.
(
⎯
⎯
1
μA
⎯
⎯
1
μA
SCL 400 kHz
⎯
40
80
μA
SCL
⎯
90
130
μA
⎯
5
10
μA
*1
|ILI|
VIN 0 V
*2
|ILO|
VOUT 0 V
IDD
)
VDD
VDD
1000 kHz
SCL, SDA
WP
0V
VDD
VDD
ISB
TA
25 °C
“H”
VIH
VDD 3.0 V
5.5 V
VDD×0.8
⎯
5.5
V
“L”
VIL
VDD 3.0 V
5.5 V
VSS
⎯
VDD×0.2
V
“L”
VOL
IOL 3 mA
⎯
⎯
0.4
V
A1, A2, WP
RIN
VIN
VIN
1:
2:
12
VIL (
VIH (
)
50
⎯
⎯
kΩ
)
1
⎯
⎯
MΩ
: SCL, SDA
: SDA
DS501-00016-4v0-J
MB85RC04V
2.
FSCL
0
100
0
400
0
1000
kHz
THIGH
4000
⎯
600
⎯
400
⎯
ns
TLOW
4700
⎯
1300
⎯
600
⎯
ns
SCL/SDA
Tr
⎯
1000
⎯
300
⎯
300
ns
SCL/SDA
Tf
⎯
300
⎯
300
⎯
100
ns
Start
THD:STA
4000
⎯
600
⎯
250
⎯
ns
Start
TSU:STA
4700
⎯
600
⎯
250
⎯
ns
SDA
THD:DAT
0
⎯
0
⎯
0
⎯
ns
SDA
TSU:DAT
250
⎯
100
⎯
100
⎯
ns
SDA
TDH:DAT
0
⎯
0
⎯
0
⎯
ns
Stop
TSU:STO
4000
⎯
600
⎯
250
⎯
ns
SCL
SCL
(SCL
SDA
, SDA
)
TAA
⎯
3000
⎯
900
⎯
550
ns
TBUF
4700
⎯
1300
⎯
500
⎯
ns
TSP
⎯
50
⎯
50
⎯
50
ns
,
:
:
3.0 V
4.5 V
40 °C
VDD×0.2
5 ns
5 ns
VDD/2
VDD/2
DS501-00016-4v0-J
5.5 V
5.5 V
85 °C
VDD×0.8
13
MB85RC04V
3.
TSU:DAT
SCL
SDA
VIH
VIL
Start
THD:DAT
VIH
VIH
VIH
VIH
VIL
VIL
VIL
VIL
VIH
VIH
VIH
VIH
VIL
VIL
VIL
VIL
TSU:STA THD:STA
TSU:STO
Tr
THIGH
SCL
Stop
VIH
VIH
VIL
Tf
TLOW
VIL
VIH
VIH
VIL
VIL
VIH
SDA
Stop
VIH
VIL
Start
VIH
VIL
VIH
VIL
VIL
TBUF
Tr
T
TDH:DAT f
TAA
Tsp
VIH
SCL
VIL
VIL
VIH
SDA
Valid
VIL
VIH
VIL
VIL
1/FSCL
4.
CI/O
CIN
VDD VIN VOUT
0 V,
f 1 MHz, TA
25 °C
⎯
⎯
15
pF
⎯
⎯
15
pF
5. AC
5.5 V
1.8 kΩ
Output
100 pF
14
DS501-00016-4v0-J
MB85RC04V
■
tf
tpd
tOFF
tr
tpu
VDD
VDD
2.7 V
2.7 V
VIH (Min)
VIH (Min)
1.0 V
1.0 V
VIL (Max)
VIL (Max)
0V
0V
SDA, SCL > VDD × 0.8 *
SDA, SCL
SDA, SCL (Max)
OFF
ON
VDD
SDA, SCL : Don't care
SDA, SCL > VDD × 0.8 *
SDA, SCL
0.5 V
85
⎯
ns
85
⎯
ns
VDD=5.0 V±0.5 V
0.5
⎯
ms
VDD=3.3 V±0.3 V
0.5
50
ms
VDD=5.0 V±0.5 V
0.005
50
ms
VDD=3.3 V±0.3 V
tf
0.5
50
ms
⎯
tOFF
50
⎯
ms
⎯
tpd
SDA, SCL
tpu
SDA, SCL
tr
⎯
,
,
■ FRAM
*1
/
1012
⎯
10
⎯
T
A
85 °C
95
⎯
T
A
55 °C
⎯
T
A
35 °C
*2
200
1
2
FRAM
,
/
TA
85 °C
/
,
,
DS501-00016-4v0-J
15
MB85RC04V
■
, WP, A1, A2
VDD
VSS
■ ESD
DUT
ESD HBM(
JESD22-A114
2000 V
2000 V
)
ESD MM(
JESD22-A115
200 V
200 V
)
ESD CDM(
JESD22-C101
)
(
⎯
)
(
⎯
MB85RC04VPNF-G-JNE1
JESD78
)
⎯
JESD78
(
Proprietary method
)
⎯
(C-V
Proprietary method
)
200 V
200 V
(
)
A
VDD
IIN
16
) VIN
IIN
-
VSS
, IIN
±300 mA
, I/O
VDD
(
)
V
VIN
(
+
DUT
300 mA
(
)
,
IIN
300 mA
,
DS501-00016-4v0-J
MB85RC04V
(C-V
)
A
1
2
VDD
SW
DUT
+
V
VIN
-
(
) SW
2
1
,5
1
2
C
200pF
VDD
(
)
VSS
,
,5
,
■
JEDEC
, Moisture Sensitivity Level 3 (IPC / JEDEC J-STD-020D)
■
, REACH
DS501-00016-4v0-J
, EU RoHS
RoHS
17
MB85RC04V
■
MB85RC04VPNF-G-JNE1
SOP, 8
(FPT-8P-M02)
⎯*
MB85RC04VPNF-G-JNERE1
SOP, 8
(FPT-8P-M02)
1500
,
18
DS501-00016-4v0-J
MB85RC04V
■
ࡊ࡜ࠬ࠴࠶ࠢ࡮SOP, 8 ࡇࡦ
࡝࡯࠼ࡇ࠶࠴
1.27mm
ࡄ࠶ࠤ࡯ࠫ᏷˜
ࡄ࠶ࠤ࡯ࠫ㐳ߐ
3.9mm ˜ 5.05mm
࡝࡯࠼ᒻ⁁
ࠟ࡞࠙ࠖࡦࠣ
ኽᱛᣇᴺ
ࡊ࡜ࠬ࠴࠶ࠢࡕ࡯࡞࠼
ขઃߌ㜞ߐ
1.75mm MAX
⾰㊂
0.06g
(FPT-8P-M02)
ࡇࡦ
ࡊ࡜ࠬ࠴࠶ࠢ࡮
㧔FPT-8P-M02㧕
+0.25
ᵈ 1㧕* ශኸᴺߪ࡟ࠫࡦᱷࠅࠍ฽߻‫ޕ‬
ᵈ 2㧕* ශኸᴺߪ࡟ࠫࡦᱷࠅࠍ฽߹ߕ‫ޕ‬
ᵈ 3㧕┵ሶ᏷߅ࠃ߮┵ሶෘߐߪࡔ࠶ࠠෘࠍ฽߻‫ޕ‬
ᵈ 4㧕┵ሶ᏷ߪ࠲ࠗࡃಾᢿᱷࠅࠍ฽߹ߕ‫ޕ‬
+.010
+0.03
*1 5.05 –0.20 .199 –.008
0.22 –0.07
+.001
.009 –.003
8
5
*2 3.90±0.30 6.00±0.20
(.154±.012) (.236±.008)
Details of "A" part
45°
1.55±0.20
(Mounting height)
(.061±.008)
0.25(.010)
0.40(.016)
1
"A"
4
1.27(.050)
0.44±0.08
(.017±.003)
0.13(.005)
0~8°
M
0.50±0.20
(.020±.008)
0.60±0.15
(.024±.006)
0.15±0.10
(.006±.004)
(Stand off)
0.10(.004)
C
2002-2012 FUJITSU SEMICONDUCTOR LIMITED F08004S-c-5-10
DS501-00016-4v0-J
න૏㧦mm 㧔inches㧕
ᵈᗧ㧦᜝ᒐౝߩ୯ߪෳ⠨୯ߢߔ‫ޕ‬
19
MB85RC04V
■
[MB85RC04VPNF-G-JNE1]
[MB85RC04VPNF-G-JNERE1]
RC04V
E11150
300
[FPT-8P-M02]
20
DS501-00016-4v0-J
MB85RC04V
■
1.
1.1
(
(
)
)
520 mm
,
/
SOP, 8 (2)
FPT-8P-M02
/
95
7600
/
30400
1.8
2.6
7.4
6.4
4.4
C
©2006-2010 FUJITSU SEMICONDUCTOR LIMITED
2006 FUJITSU LIMITED F08008-SET1-PET:FJ99L-0022-E0008-1-K-1
F08008-SET1-PET:FJ99L-0022-E0008-1-K-3
t
0.5
(
DS501-00016-4v0-J
mm)
21
MB85RC04V
1.2
IC
SOP
Index mark
1
(
(
1
2
3
(
3
-B
3
E1
,
)
2
,
,
)
)
3
1
-A
*3
,
G
Pb
,
,
,
22
DS501-00016-4v0-J
MB85RC04V
1.3
(
[C-3
,
(20mm×100mm)]
(50mm×100mm)
)
㘈ቴ⵾ຠဳᩰ‫ޓ‬෶ߪ‫ޔ‬ን჻ㅢ⵾ຠဳᩰ
::::::::::::::
C-3
㋦㩖㩢㨺㩙㨺㩂
:::
਄⸥⵾ຠဳᩰ⵾ຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨
㧽㧯‫ޓ‬㧼㧭㧿㧿
0::::::::::::::
0:::::::::: ::::::
ᬌᩏ‫ޓ‬ᷣ
ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨
⵾ຠᢙ㊂
:::REU
::::::::::::::
㘈ቴ⵾ຠဳᩰ‫ޓ‬෶ߪ‫ޔ‬ን჻ㅢ⵾ຠဳᩰ
਄⸥⵾ຠဳᩰߩ㩔㩨㨺㩄㨺㩎㩨
::::::::
൮ⵝᐕ᦬ᣣ
#55'/$.'&+0ZZZZZ
:::::::::::::::
㘈ቴ⵾ຠဳᩰ‫ޓ‬෶ߪ‫ޔ‬ን჻ㅢ⵾ຠဳᩰ
ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨
::::
::::::::::
൮ⵝㅊ⇟
::::::::::
::::::::::
ን჻ㅢ▤ℂ⇟ภ
⵾ຠ㩥㨹㩎ᖱႎ㧗⵾ຠᢙ㊂
:::::::::::::: ․⸥੐㗄
-A
[D
] (100mm×100mm)
⊒ᵈ⠪‫ޓޓ‬:::::::::::::
ㅍઃవฬ
%756
ን჻ㅢ
࠮ࡒࠦࡦ࠳ࠢ࠲࡯ᩣᑼળ␠
ฃᷰ႐ᚲฬ‫ޓޓ‬:::::::::
ㅍઃవ૑ᚲ
&'.+8'4;21+06㧕
⚊ຠࠠ࡯⇟ภ‫ޓ‬::::::::::::::
64#0501
ຠฬ㩄㨺㩎㩨‫ޓޓޓ‬::::::::::::::
2#4601‫⵾
ޓޓޓ‬ຠဳᩰ
ຠฬ 2#460#/'::::::::::::::
⵾ຠဳᩰ
:::㧛:::
౉ᢙ㧛⚊౉ᢙ㊂
36;616#.36;
%7561/'454'/#4-5
⊒ᵈ⠪↪஻⠨
::::::::::::::::::::
D
ฃᵈ⠪
8'0&14
:::::::
ን჻ㅢ▤ℂ⇟ภ
:::::::
ን჻ㅢ▤ℂ⇟ภ
:::::::
ን჻ㅢ▤ℂ⇟ภ
:::::::::::::::
‫⵾
ޓ‬ຠဳᩰ
න૏
70+6
::
2#%-#)'%1706
ᪿ൮୘ᢙ
:::㧛:::
0:::::::::::::::::
ን჻ㅢ▤ℂ⇟ภ⵾ຠᢙ㊂
0:::::::::::::::::
⵾ຠဳᩰ⵾ຠᢙ㊂
ን჻ㅢ▤ℂ⇟ภ⵾ຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨
⵾ຠဳᩰ⵾ຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨
ን჻ㅢ▤ℂ⇟ภ
0::::::::::
ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨
-B
::::::::::::::㧔⵾ຠဳᩰ㧕
㧔▫ᢙ㧕‫ޓޓޓ‬㧔ᢙ㊂㧕
‫ޓ‬:▫‫ޓޓޓޓޓ‬:::୘
‫ޓ‬:▫‫ޓޓޓޓޓ‬:::୘
㧔⵾ຠ㩥㨹㩎ᖱႎ㧕
‫ޓޓޓ‬:::::::
‫ޓޓޓ‬:::::::
(
)
DS501-00016-4v0-J
,
‫ޓޓޓޓޓ⸘ޓޓ‬:::୘
-A, B
23
MB85RC04V
1.4
(1)
H
W
L
L
W
H
540
125
75
(
mm)
(2)
H
W
L
L
W
H
565
270
180
(
24
mm)
DS501-00016-4v0-J
MB85RC04V
2.
2.1
No
FPT-8P-M02
3
/
/
/
1500
1500
10500
ø1.5 +0.1
–0
8±0.1
1.75±0.1
2±0.05
4±0.1
B
0.3±0.05
A
B
A
5.5±0.1
12 +0.3
–0.1
5.5±0.05
ø1.5 +0.1
–0
SEC.B-B
2.1±0.1
6.4±0.1
0.4
3.9±0.2
SEC.A-A
C
2012 FUJITSU SEMICONDUCTOR LIMITED SOL8-EMBOSSTAPE9 : NFME-EMB-X0084-1-P-1
mm
DS501-00016-4v0-J
25
MB85RC04V
2.2 IC
Index mark
ER
(
)
(
)
(
)
2.3
࡝࡯࡞ⓣኸᴺ
E
D
W2
C
B
A
W1
12
13
14
15
56
12
16
24
r
W3
㧦ࡂࡉㇱߩ᏷ኸᴺ
mm
No
1
2
3
8
A
254
±2
4
5
12
254
±2
6
7
16
330
±2
254
±2
330
±2
254
±2
10
11
32
44
330
±2
330±2
100 +2
-0
150 +2
-0
100 +2
-0
150 +2
-0
100 +2
-0
100±2
C
13±0.2
13 +0.5
-0.2
D
21±0.8
20.5 +1
-0.2
E
W1
W2
W3
r
26
9
24
100 +2
-0
B
8
2±0.5
8.4 +2
-0
14.4
7.9
10.9
12.4 +2
-0
18.4
11.9
16.4 +2
-0
22.4
15.4
15.9
24.4 +2
-0
30.4
19.4
23.9
32.4 +2
-0
38.4
27.4
31.9
44.4 +2
-0
50.4
35.4
43.9
47.4
56.4 +2
-0
12.4 +1
-0
+0.1
16.4 +1
-0 24.4 -0
62.4
18.4
22.4
30.4
55.9
59.4
12.4
14.4
16.4
18.4
24.4
26.4
1.0
DS501-00016-4v0-J
MB85RC04V
2.4
(φ330mm
)
φ
330 mm
1,
1,
4
1,
4
4
1,
4
(
-A
1
2
3
4
(
E1
4
)
-B
2,
3
4
,
G
Pb
,
,
)
,
,
,
,
,
DS501-00016-4v0-J
27
MB85RC04V
2.5
(
[C-3
,
(20mm×100mm)]
(50mm×100mm)
)
㘈ቴ⵾ຠဳᩰ‫ޓ‬෶ߪ‫ޔ‬ን჻ㅢ⵾ຠဳᩰ
::::::::::::::
0::::::::::::::
㋦㩖㩢㨺㩙㨺㩂
:::
਄⸥⵾ຠဳᩰ⵾ຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨
㧽㧯‫ޓ‬㧼㧭㧿㧿
0:::::::::: ::::::
C-3
ᬌᩏ‫ޓ‬ᷣ
ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨
⵾ຠᢙ㊂
:::REU
::::::::::::::
㘈ቴ⵾ຠဳᩰ‫ޓ‬෶ߪ‫ޔ‬ን჻ㅢ⵾ຠဳᩰ
਄⸥⵾ຠဳᩰߩ㩔㩨㨺㩄㨺㩎㩨
::::::::
൮ⵝᐕ᦬ᣣ
#55'/$.'&+0ZZZZZ
:::::::::::::::
㘈ቴ⵾ຠဳᩰ‫ޓ‬෶ߪ‫ޔ‬ን჻ㅢ⵾ຠဳᩰ
ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨
::::
::::::::::
൮ⵝㅊ⇟
::::::::::
::::::::::
ን჻ㅢ▤ℂ⇟ภ
⵾ຠ㩥㨹㩎ᖱႎ㧗⵾ຠᢙ㊂
:::::::::::::: ․⸥੐㗄
-A
[D
] (100mm×100mm)
⊒ᵈ⠪‫ޓޓ‬:::::::::::::
ㅍઃవฬ
%756
ን჻ㅢ
࠮ࡒࠦࡦ࠳ࠢ࠲࡯ᩣᑼળ␠
ฃᷰ႐ᚲฬ‫ޓޓ‬:::::::::
ㅍઃవ૑ᚲ
&'.+8'4;21+06㧕
⚊ຠࠠ࡯⇟ภ‫ޓ‬::::::::::::::
64#0501
ຠฬ㩄㨺㩎㩨‫ޓޓޓ‬::::::::::::::
2#4601‫⵾
ޓޓޓ‬ຠဳᩰ
ຠฬ 2#460#/'::::::::::::::
⵾ຠဳᩰ
:::㧛:::
౉ᢙ㧛⚊౉ᢙ㊂
36;616#.36;
%7561/'454'/#4-5
⊒ᵈ⠪↪஻⠨
::::::::::::::::::::
D
ฃᵈ⠪
8'0&14
:::::::
ን჻ㅢ▤ℂ⇟ภ
:::::::
ን჻ㅢ▤ℂ⇟ภ
:::::::
ን჻ㅢ▤ℂ⇟ภ
:::::::::::::::
‫⵾
ޓ‬ຠဳᩰ
න૏
70+6
::
2#%-#)'%1706
ᪿ൮୘ᢙ
:::㧛:::
0:::::::::::::::::
ን჻ㅢ▤ℂ⇟ภ⵾ຠᢙ㊂
0:::::::::::::::::
⵾ຠဳᩰ⵾ຠᢙ㊂
ን჻ㅢ▤ℂ⇟ภ⵾ຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨
⵾ຠဳᩰ⵾ຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨
ን჻ㅢ▤ℂ⇟ภ
0::::::::::
ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨
-B
::::::::::::::㧔⵾ຠဳᩰ㧕
㧔▫ᢙ㧕‫ޓޓޓ‬㧔ᢙ㊂㧕
‫ޓ‬:▫‫ޓޓޓޓޓ‬:::୘
‫ޓ‬:▫‫ޓޓޓޓޓ‬:::୘
‫ޓޓޓޓޓ⸘ޓޓ‬:::୘
㧔⵾ຠ㩥㨹㩎ᖱႎ㧕
‫ޓޓޓ‬:::::::
‫ޓޓޓ‬:::::::
(
28
)
,
-A, B
DS501-00016-4v0-J
MB85RC04V
2.6
(1)
H
W
L
L
W
H
12, 16
40
24, 32
365
44
50
345
65
56
75
(
mm)
(2)
H
W
L
L
W
H
415
400
315
(
DS501-00016-4v0-J
mm)
29
MB85RC04V
■
,
11
12
1.
|
“H”
“L”
“H”
“L”
17
19
30
DS501-00016-4v0-J
MB85RC04V
MEMO
DS501-00016-4v0-J
31
MB85RC04V
富士通セミコンダクター株式会社
0120-198-610
222-0033
2-100-45
:
9
17
(
,
)
PHS
http://jp.fujitsu.com/fsl/
,
,
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