FUJITSU SEMICONDUCTOR DS501-00028-2v0-J DATA SHEET FRAM I2C 512K (64 K×8) MB85RC512T ■ MB85RC512T ×8 MB85RC512T MB85RC512T MB85RC512T , CMOS FRAM (Ferroelectric Random Access Memory: , SRAM / E2PROM , 1013 , ,1 , ■ 2 / :65,536 ×8 : (SCL) (SDA) 2 :3.4 MHz ( Max) 1 MHz ( Max) / :1013 :10 ( 85 °C) :1.8 V 3.6 V : 0.71 mA (Typ @ 3.4 MHz), 1.2 mA (Max @ 3.4 MHz) 15 μA (Typ) 4 μA (Typ) : 40 °C 85 °C : SOP, 8 (FPT-8P-M02) RoHS Copyright 2015 FUJITSU SEMICONDUCTOR LIMITED 2015.5 65,536 ) MB85RC512T ■ (TOP VIEW) A0 1 8 VDD A1 2 7 WP A2 3 6 SCL VSS 4 5 SDA (FPT-8P-M02) ■ ( 8 ) , 1 3 A0 A2 VSS VDD , SDA VDD, VSS • A0, A1, A2 • VSS 4 VSS 5 SDA 6 SCL , “L” , , “H” 7 “L” 8 2 , “L” , WP ( , VSS ) , VDD DS501-00028-2v0-J MB85RC512T ■ - SDA FRAM 65,536×8 SCL WP / / A0, A1, A2 ■ I2C (Inter-Integrated Circuit) MB85RC512T , , , I2C ,2 , ,1 , I I 2C , , 2 C VDD SCL SDA I2C DS501-00028-2v0-J I2C MB85RC512T I2C MB85RC512T I2C MB85RC512T A2 0 A2 0 A2 0 A1 0 A0 0 A1 0 A0 1 A1 1 ... A0 0 3 MB85RC512T ■ I2C I2C ,2 , SDA SCL , SCL “H” I2C “L” , SCL I2C , SCL “L” SDA “H” “H” , SDA , SDA “L” “H” “H” , , , , , SCL SDA H or L Start Stop FRAM ■ (tWC) , (ACK) 2 IC , , 8 8 , , “L” , , NACK “H” Master 1 SCL 2 3 8 SDA , , 9 ACK 9 Start 4 9 , SDA , ACK “L” , Slave , SCL 8 9 ACK , , Slave ACK , , , 8 (ACK SDA ) DS501-00028-2v0-J MB85RC512T ■ (Slave address) ,8 , (8 (3 ), Read / Write (4 (1 ) ) , (4 ), 3 ) 4 (3 , “1010” ) (3 , 8 Read/Write , (1 ,3 ) 8 , R/W (Read/Write) “1010” , , , ) A2, A1, A0 “0” , “1” / Start 1 2 3 4 5 6 7 8 9 1 2 .. SCL SDA ACK S 1 0 1 0 A2 A1 A0 R/W .. A Read/Write S A ACK (SDA DS501-00028-2v0-J “L” ) 5 MB85RC512T ■ I2C , 9 (8 ACK“L” , ACK , ACK“L” 8 8 , ) 8 ACK“L” , • ×2 , , R/W 8 , , , , ACK 8 , ACK ACK , 8 8 , ■ FRAM (Acknowledge Polling) FRAM E2PROM , ACK , * , , (8 ) ,9 ■ (WP) “H” “L” , , , VSS “H” , /“L” “L” ( ) 6 DS501-00028-2v0-J MB85RC512T ■ Byte Write (R/W “0” ACK S , ) , 1 0 1 0 A2 A1 A0 0 A Address High 8bits A X XXXXXXX , ACK , Address Low 8bits A Write Data 8bits A P X X X X X X XX MSB LSB S P A ACK (SDA Page Write Byte Write ( ) , S , 64 K FRAM , ACK 1 0 1 0 A2 A1 A0 0 A ) , (0000H) , , FRAM “L” , FRAM Address High 8bits A Address Low 8bits A Write Data 8bits Write Data A ... A P S P A ACK (SDA “L” ) , DS501-00028-2v0-J 7 MB85RC512T Current Address Read , n , OFF ,n 1 (0000H) , ( Current Address ) n+1 S 1 0 1 0 A2 A1 A0 1 A Read Data 8bits S N P P A ACK (SDA “L” N NACK (SDA ) “H” ) Random Read , ) NACK (SDA S , , “H” 1 0 1 0 A2 A1 A0 0 A (R/W “1” , SCL ,1 ) , Address High 8bits A Address Low 8bits A S Read Data 8bits 1 0 1 0 A2 A1 A0 1 A N P S P A ACK (SDA N NACK (SDA 8 “L” “H” ) ) DS501-00028-2v0-J MB85RC512T Sequential Read Random Read , (R/W “1” ) , ... , (0000H) Read Data 8bits A A ... Read Data Read Data 8bits A N P P A ACK (SDA “L” N NACK (SDA MB85RC512T , 3.4 MHz Master Slave NACK , (0000 1XXX) ) “H” ) , Slave , ,NACK , 3.4 MHz , Byte Write S 0 0 0 0 1 X X X N S 1 0 1 0 A2 A1 A0 0 A Address High 8bits A Address Low 8bits A Write Data 8bits A P Address High 8bits A Address Low 8bits A Write Data 8bits A Page Write S 0 0 0 0 1 X X X N S 1 0 1 0 A2 A1 A0 0 A Write Data ... A P Current Address Read S 0 0 0 0 1 X X X N S 1 0 1 0 A2 A1 A0 1 A Read Data 8bits N P Random Address Read S 0 0 0 0 1 X X X N S 1 0 1 0 A2 A1 A0 0 A Address High 8bits A Address Low 8bits A S 1 0 1 0 A2 A1 A0 1 A Read Data 8bits N P Address High 8bits A Address Low 8bits A S 1 0 1 0 A2 A1 A0 1 A Read Data 8bits A Sequential Read S 0 0 0 0 1 X X X N S 1 0 1 0 A2 A1 A0 0 A ... A Read Data 8bits A Read Data ... Read Data 8bits A ... N P S P DS501-00028-2v0-J A A N N ACK (SDA “L” NACK (SDA “H” ) ) 9 MB85RC512T Sleep MB85RC512T , Sleep Sleep a) b) c) d) , Sleep , , F8H ACK , Read/Write ACK ACK , , Don't care , , 86H , Sleep S 1 1 1 1 1 0 0 0 A 1 0 1 0 A2 A1 A0 R/W A S 1 0 0 0 0 1 1 0 A P S P A MB85RC512T Sleep a) b) c) , Sleep (tREC) , SDA ACK (SDA “L” ) SCL , , , , Read/Write , Don't care 9 CLK SCL , , , S 1 0 1 0 A2 A1 A0 R/W X , S 1 0 1 0 A2 A1 A0 R/W A … S A 10 ACK (SDA “L” ) DS501-00028-2v0-J MB85RC512T Device ID Device ID ID (12 a) b) c) , ) ID ID 3 ID , ACK , Read/Write ACK d) e) 3 3 , , Manufacturer ID (12 , ID F8H ) Product , Don't care , ACK ID ID , , , , ID F9H Data Byte 1st/2nd/3rd NACK (SDA “H” ) ACK , Data Byte 1st , , ID Reserved Reserved R S Slave ID A 1 0 1 0 A2 A1 A0 / A S Slave ID A Data Byte A Data Byte A Data Byte N P W 1st 2nd 3rd (F8H) (F9H) S P A ACK (SDA “L” N NACK (SDA Data Byte 1st Manufacture ID = 00AH Data Byte 2nd ) “H” ) Data Byte 3rd Product ID = 658H 11 10 9 8 7 6 5 4 3 Fujitsu Semiconductor 2 1 0 11 10 9 8 Density = 6H 7 6 5 4 3 2 Proprietary use 1 0 0 0 0 0 1 0 0 0 1 0 0 0 0 DS501-00028-2v0-J 0 0 0 0 1 1 1 0 1 1 0 11 MB85RC512T ■ , I2C , (1) , , (2) , , , , (1) SDA “L” , SDA , “H” , 9 “ 1 “1”” SCL SDA Hi-Z 1 Read (2) I2C 12 Write , “1” 9 , DS501-00028-2v0-J MB85RC512T ■ * VDD 0.5 * VIN 0.5 VDD 0.5 ( 4.0) V * VOUT 0.5 VDD 0.5 ( 4.0) V TA 40 85 °C Tstg 55 125 °C VSS + 4.0 V 0V ( , , ) , , ■ VDD *1 TA *2 1 2 VSS 1.8 40 ⎯ 3.6 ⎯ V °C 85 0V , , , , , , , DS501-00028-2v0-J 13 MB85RC512T ■ 1. ( ⎯ ⎯ 1 μA ⎯ ⎯ 1 μA SCL 0.1 MHz ⎯ 0.04 ⎯ mA SCL 1 MHz ⎯ 0.24 0.44 mA SCL ⎯ 0.71 1.2 mA ⎯ 15 120 μA ⎯ 4 10 μA *1 |ILI| VIN 0 V *2 |ILO| VOUT 0 V IDD ISB ) VDD VDD 3.4 MHz SCL, SDA VDD A0,A1,A2,WP 0V VDD TA 25 °C IZZ SCL, SDA VDD A0, A1, A2, WP 0 V “H” VIH VDD 1.8 V 3.6 V VDD × 0.7 ⎯ VDD V “L” VIL VDD 1.8 V 3.6 V VSS ⎯ VDD × 0.3 V “L” VOL IOL 3 mA ⎯ ⎯ 0.4 V A0, A1, A2, WP RIN 1: 2: 14 VIN VIL ( ) 50 ⎯ ⎯ kΩ VIN VIH ( ) 1 ⎯ ⎯ MΩ : SCL, SDA : SDA DS501-00028-2v0-J MB85RC512T 2. FSCL 0 100 0 400 4000 ⎯ 600 ⎯ TLOW 4700 ⎯ 1300 ⎯ SCL/SDA Tr SCL/SDA Tf ⎯ 1000 ⎯ ⎯ 300 ⎯ Start THD:STA 4000 ⎯ Start TSU:STA 4700 SDA THD:DAT SCL THIGH 0 1000 0 3400 kHz *1 ⎯ 60 ⎯ ns *2 500 ⎯ 160 ⎯ ns 300 ⎯ 300 ⎯ 80 ns 300 ⎯ 120 ⎯ 80 ns 600 ⎯ 250 ⎯ 160 ⎯ ns ⎯ 600 ⎯ 250 ⎯ 160 ⎯ ns 0 ⎯ 0 ⎯ 0 ⎯ 0 ⎯ ns 260 SDA TSU:DAT 250 ⎯ 100 ⎯ 50 ⎯ 16 ⎯ ns SDA TDH:DAT 0 ⎯ 0 ⎯ 0 ⎯ 0 ⎯ ns Stop TSU:STO 4000 ⎯ 600 ⎯ 250 ⎯ 160 ⎯ ns SCL SDA TAA ⎯ 3000 ⎯ 900 ⎯ 450*3 ⎯ 130 ns TBUF 4700 ⎯ 1300 ⎯ 500 ⎯ 0.3 ⎯ ns TSP ⎯ 50 ⎯ 50 ⎯ 50 ⎯ 5 ns (SCL 1:VDD 2:VDD 3:VDD 4:VDD , SDA 2.7 V 2.7 V 2.7 V 2.7 V ) *4 300 ns 600 ns 550 ns 26 ns , 1.8 V 3.6 V 40 °C 85 °C VDD×0.2 VDD×0.8 5 ns 5 ns VDD/2 VDD/2 100 pF DS501-00028-2v0-J 15 MB85RC512T 3. TSU:DAT SCL SDA VIH VIL Start THD:DAT VIH VIH VIH VIH VIL VIL VIL VIL VIH VIH VIH VIH VIL VIL VIL VIL TSU:STA THD:STA TSU:STO Tr THIGH SCL Stop VIH TLOW VIH VIL Tf VIL VIH VIH VIL VIL VIH SDA Stop VIH VIL Start VIH VIL VIH VIL VIL TBUF Tr T TDH:DAT f TAA Tsp VIH SCL VIL VIL VIH SDA VIH Valid VIL VIL VIL 1/FSCL 4. CI/O CIN f VDD 3.3V, 1 MHz, TA 25 °C ⎯ ⎯ 8 pF ⎯ ⎯ 8 pF 5. AC 3.3 V 1.8 k Output 100 pF 16 DS501-00028-2v0-J MB85RC512T ■ tf tpd tr tpu VDD VDD VDD (Min) VDD (Min) VIH (Min) VIH (Min) VIL (Max) VIL (Max) 0V 0V SDA, SCL > VDD × 0.8 * SDA, SCL SDA, SCL (Max) OFF ON VDD SDA, SCL : Don't care SDA, SCL > VDD × 0.8 * SDA, SCL 0.5 V tpd 85 ⎯ ns tpu 250 ⎯ μs tr 0.05 ⎯ ms/V tf 0.1 ⎯ ms/V tREC ⎯ 400 μs SDA, SCL SDA, SCL , , ■ FRAM *1 / * 1 2 1013 ⎯ 10 ⎯ 2 FRAM , / TA 85 °C TA 85 °C / , , DS501-00028-2v0-J 17 MB85RC512T ■ , WP, A0, A1, A2 VDD VSS ■ ESD DUT ESD HBM( JESD22-A114 2000 V 2000 V ) ESD MM( JESD22-A115 200 V 200 V ) ESD CDM( JESD22-C101 1000 V 1000 V ) ( ) ⎯ MB85RC512TPNF-G-JNE1 JESD78 ( ) ⎯ JESD78 ( Proprietary method ) ⎯ (C-V Proprietary method ) 200 V 200 V ( ) A VDD IIN 18 ) VIN IIN - VSS , IIN ±300 mA , I/O VDD ( ) V VIN ( + DUT 300 mA ( ) , IIN 300 mA , DS501-00028-2v0-J MB85RC512T (C-V ) A 1 2 VDD SW DUT + V VIN - ( ) SW 2 1 ,5 1 2 C 200pF VDD ( ) VSS , ,5 , ■ JEDEC , Moisture Sensitivity Level 3 (IPC / JEDEC J-STD-020D) ■ , REACH DS501-00028-2v0-J , EU RoHS RoHS 19 MB85RC512T ■ MB85RC512TPNF-G-JNE1 SOP, 8 (FPT-8P-M02) ⎯* MB85RC512TPNF-G-JNERE1 SOP, 8 (FPT-8P-M02) 1500 , 20 DS501-00028-2v0-J MB85RC512T ■ ࡊࠬ࠴࠶ࠢSOP, 8 ࡇࡦ ࠼ࡇ࠶࠴ 1.27mm ࡄ࠶ࠤࠫ ࡄ࠶ࠤࠫ㐳ߐ 3.9mm 5.05mm ࠼ᒻ⁁ ࠟ࡞࠙ࠖࡦࠣ ኽᱛᣇᴺ ࡊࠬ࠴࠶ࠢࡕ࡞࠼ ขઃߌ㜞ߐ 1.75mm MAX ⾰㊂ 0.06g (FPT-8P-M02) ࡊࠬ࠴࠶ࠢ ࡇࡦ 㧔FPT-8P-M02㧕 +0.25 ᵈ 1㧕* ශኸᴺߪࠫࡦᱷࠅࠍޕ ᵈ 2㧕* ශኸᴺߪࠫࡦᱷࠅࠍ߹ߕޕ ᵈ 3㧕┵ሶ߅ࠃ߮┵ሶෘߐߪࡔ࠶ࠠෘࠍޕ ᵈ 4㧕┵ሶߪ࠲ࠗࡃಾᢿᱷࠅࠍ߹ߕޕ +.010 +0.03 *1 5.05 –0.20 .199 –.008 0.22 –0.07 +.001 .009 –.003 8 5 *2 3.90±0.30 6.00±0.20 (.154±.012) (.236±.008) Details of "A" part 45° 1.55±0.20 (Mounting height) (.061±.008) 0.25(.010) 0.40(.016) 1 "A" 4 1.27(.050) 0.44±0.08 (.017±.003) 0.13(.005) 0~8° M 0.50±0.20 (.020±.008) 0.60±0.15 (.024±.006) 0.15±0.10 (.006±.004) (Stand off) 0.10(.004) C 2002-2012 FUJITSU SEMICONDUCTOR LIMITED F08004S-c-5-10 DS501-00028-2v0-J න㧦mm 㧔inches㧕 ᵈᗧ㧦ᒐౝߩ୯ߪෳ⠨୯ߢߔޕ 21 MB85RC512T ■ [MB85RC512TPNF-G-JNE1] [MB85RC512TPNF-G-JNERE1] RC512T E11400 300 [FPT-8P-M02] 22 DS501-00028-2v0-J MB85RC512T ■ 1. 1.1 ( ( ) ) 520 mm , / SOP, 8 (2) FPT-8P-M02 / 95 7600 / 30400 1.8 2.6 7.4 6.4 4.4 C ©2006-2010 FUJITSU SEMICONDUCTOR LIMITED 2006 FUJITSU LIMITED F08008-SET1-PET:FJ99L-0022-E0008-1-K-1 F08008-SET1-PET:FJ99L-0022-E0008-1-K-3 t 0.5 ( DS501-00028-2v0-J mm) 23 MB85RC512T 1.2 IC SOP Index mark 1 ( ( -B 3 E1 1 2 3 ( 3 , ) 2 , , ) ) 3 1 -A *3 , G Pb , , , 24 DS501-00028-2v0-J MB85RC512T 1.3 ( [C-3 , (20mm×100mm)] (50mm×100mm) ) 㘈ቴຠဳᩰޓߪޔን჻ㅢຠဳᩰ :::::::::::::: C-3 ㋦㩖㩢㨺㩙㨺㩂 ::: ⸥ຠဳᩰຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨 㧽㧯ޓ㧼㧭㧿㧿 0:::::::::::::: 0:::::::::: :::::: ᬌᩏޓᷣ ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨 ຠᢙ㊂ :::REU :::::::::::::: 㘈ቴຠဳᩰޓߪޔን჻ㅢຠဳᩰ ⸥ຠဳᩰߩ㩔㩨㨺㩄㨺㩎㩨 :::::::: ൮ⵝᐕᣣ #55'/$.'&+0ZZZZZ ::::::::::::::: 㘈ቴຠဳᩰޓߪޔን჻ㅢຠဳᩰ ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨 :::: :::::::::: ൮ⵝㅊ⇟ :::::::::: :::::::::: ን჻ㅢ▤ℂ⇟ภ ຠ㩥㨹㩎ᖱႎ㧗ຠᢙ㊂ :::::::::::::: ․⸥㗄 -A [D ] (100mm×100mm) ⊒ᵈ⠪ޓޓ::::::::::::: ㅍઃవฬ %756 ን჻ㅢ ࡒࠦࡦ࠳ࠢ࠲ᩣᑼળ␠ ฃᷰ႐ᚲฬޓޓ::::::::: ㅍઃవᚲ &'.+8'4;21+06㧕 ⚊ຠࠠ⇟ภޓ:::::::::::::: 64#0501 ຠฬ㩄㨺㩎㩨ޓޓޓ:::::::::::::: 2#4601 ޓޓޓຠဳᩰ ຠฬ 2#460#/':::::::::::::: ຠဳᩰ :::㧛::: ᢙ㧛⚊ᢙ㊂ 36;616#.36; %7561/'454'/#4-5 ⊒ᵈ⠪↪⠨ :::::::::::::::::::: D ฃᵈ⠪ 8'0&14 ::::::: ን჻ㅢ▤ℂ⇟ภ ::::::: ን჻ㅢ▤ℂ⇟ภ ::::::: ን჻ㅢ▤ℂ⇟ภ ::::::::::::::: ޓຠဳᩰ න 70+6 :: 2#%-#)'%1706 ᪿ൮ᢙ :::㧛::: 0::::::::::::::::: ን჻ㅢ▤ℂ⇟ภຠᢙ㊂ 0::::::::::::::::: ຠဳᩰຠᢙ㊂ ን჻ㅢ▤ℂ⇟ภຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨 ຠဳᩰຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨 ን჻ㅢ▤ℂ⇟ภ 0:::::::::: ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨 -B ::::::::::::::㧔ຠဳᩰ㧕 㧔▫ᢙ㧕ޓޓޓ㧔ᢙ㊂㧕 ޓ:▫ޓޓޓޓޓ::: ޓ:▫ޓޓޓޓޓ::: 㧔ຠ㩥㨹㩎ᖱႎ㧕 ޓޓޓ::::::: ޓޓޓ::::::: ( ) DS501-00028-2v0-J , ޓޓޓޓޓ⸘ޓޓ::: -A, B 25 MB85RC512T 1.4 (1) H W L L W H 540 125 75 ( mm) (2) H W L L W H 565 270 180 ( 26 mm) DS501-00028-2v0-J MB85RC512T 2. 2.1 No FPT-8P-M02 3 / / / 1500 1500 10500 ø1.5 +0.1 –0 8±0.1 1.75±0.1 2±0.05 4±0.1 B 0.3±0.05 A B A 5.5±0.1 12 +0.3 –0.1 5.5±0.05 ø1.5 +0.1 –0 SEC.B-B 2.1±0.1 6.4±0.1 0.4 3.9±0.2 SEC.A-A C 2012 FUJITSU SEMICONDUCTOR LIMITED SOL8-EMBOSSTAPE9 : NFME-EMB-X0084-1-P-1 mm DS501-00028-2v0-J 27 MB85RC512T 2.2 IC Index mark ER ( ) ( ) ( ) 2.3 ࡞ⓣኸᴺ E D W2 C B A W1 12 13 14 15 56 12 16 24 r W3 㧦ࡂࡉㇱߩኸᴺ mm No 1 2 3 8 A 254 ±2 4 5 12 254 ±2 6 7 16 330 ±2 254 ±2 330 ±2 254 ±2 10 11 32 44 330 ±2 330±2 100 +2 -0 150 +2 -0 100 +2 -0 150 +2 -0 100 +2 -0 100±2 C 13±0.2 13 +0.5 -0.2 D 21±0.8 20.5 +1 -0.2 E W1 W2 W3 r 28 9 24 100 +2 -0 B 8 2±0.5 8.4 +2 -0 14.4 7.9 10.9 12.4 +2 -0 18.4 11.9 16.4 +2 -0 22.4 15.4 15.9 24.4 +2 -0 30.4 19.4 23.9 32.4 +2 -0 38.4 27.4 31.9 44.4 +2 -0 50.4 35.4 43.9 47.4 56.4 +2 -0 12.4 +1 -0 +0.1 16.4 +1 -0 24.4 -0 62.4 18.4 22.4 30.4 55.9 59.4 12.4 14.4 16.4 18.4 24.4 26.4 1.0 DS501-00028-2v0-J MB85RC512T 2.4 (φ330mm ) φ 330 mm 1, 1, 4 1, 4 4 1, 4 ( -A 1 2 3 4 ( E1 4 ) -B 2, 3 4 , G Pb , , ) , , , , , DS501-00028-2v0-J 29 MB85RC512T 2.5 ( [C-3 , (20mm×100mm)] (50mm×100mm) ) 㘈ቴຠဳᩰޓߪޔን჻ㅢຠဳᩰ :::::::::::::: 0:::::::::::::: ㋦㩖㩢㨺㩙㨺㩂 ::: ⸥ຠဳᩰຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨 㧽㧯ޓ㧼㧭㧿㧿 0:::::::::: :::::: C-3 ᬌᩏޓᷣ ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨 ຠᢙ㊂ :::REU :::::::::::::: 㘈ቴຠဳᩰޓߪޔን჻ㅢຠဳᩰ ⸥ຠဳᩰߩ㩔㩨㨺㩄㨺㩎㩨 :::::::: ൮ⵝᐕᣣ #55'/$.'&+0ZZZZZ ::::::::::::::: 㘈ቴຠဳᩰޓߪޔን჻ㅢຠဳᩰ ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨 :::: :::::::::: ൮ⵝㅊ⇟ :::::::::: :::::::::: ን჻ㅢ▤ℂ⇟ภ ຠ㩥㨹㩎ᖱႎ㧗ຠᢙ㊂ :::::::::::::: ․⸥㗄 -A [D ] (100mm×100mm) ⊒ᵈ⠪ޓޓ::::::::::::: ㅍઃవฬ %756 ን჻ㅢ ࡒࠦࡦ࠳ࠢ࠲ᩣᑼળ␠ ฃᷰ႐ᚲฬޓޓ::::::::: ㅍઃవᚲ &'.+8'4;21+06㧕 ⚊ຠࠠ⇟ภޓ:::::::::::::: 64#0501 ຠฬ㩄㨺㩎㩨ޓޓޓ:::::::::::::: 2#4601 ޓޓޓຠဳᩰ ຠฬ 2#460#/':::::::::::::: ຠဳᩰ :::㧛::: ᢙ㧛⚊ᢙ㊂ 36;616#.36; %7561/'454'/#4-5 ⊒ᵈ⠪↪⠨ :::::::::::::::::::: D ฃᵈ⠪ 8'0&14 ::::::: ን჻ㅢ▤ℂ⇟ภ ::::::: ን჻ㅢ▤ℂ⇟ภ ::::::: ን჻ㅢ▤ℂ⇟ภ ::::::::::::::: ޓຠဳᩰ න 70+6 :: 2#%-#)'%1706 ᪿ൮ᢙ :::㧛::: 0::::::::::::::::: ን჻ㅢ▤ℂ⇟ภຠᢙ㊂ 0::::::::::::::::: ຠဳᩰຠᢙ㊂ ን჻ㅢ▤ℂ⇟ภຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨 ຠဳᩰຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨 ን჻ㅢ▤ℂ⇟ภ 0:::::::::: ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨 -B ::::::::::::::㧔ຠဳᩰ㧕 㧔▫ᢙ㧕ޓޓޓ㧔ᢙ㊂㧕 ޓ:▫ޓޓޓޓޓ::: ޓ:▫ޓޓޓޓޓ::: ޓޓޓޓޓ⸘ޓޓ::: 㧔ຠ㩥㨹㩎ᖱႎ㧕 ޓޓޓ::::::: ޓޓޓ::::::: ( 30 ) , -A, B DS501-00028-2v0-J MB85RC512T 2.6 (1) H W L L W H 12, 16 40 24, 32 365 44 50 345 65 56 75 ( mm) (2) H W L L W H 415 400 315 ( DS501-00028-2v0-J mm) 31 MB85RC512T ■ , | 19 21 32 DS501-00028-2v0-J MB85RC512T MEMO DS501-00028-2v0-J 33 MB85RC512T MEMO 34 DS501-00028-2v0-J MB85RC512T MEMO DS501-00028-2v0-J 35 MB85RC512 富士通セミコンダクター株式会社 0120-198-610 222-0033 2-100-45 : 9 17 ( , ) PHS http://jp.fujitsu.com/fsl/ , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , ,