MB85RC64A

FUJITSU SEMICONDUCTOR
DS501-00019-4v0-J
DATA SHEET
FRAM
I2C
64 K (8 K×8)
MB85RC64A
■
MB85RC64A
×8
MB85RC64A
MB85RC64A
MB85RC64A
,
CMOS
FRAM (Ferroelectric Random Access Memory:
, SRAM
/
1012
E2PROM
,
,
,1
,
■
8,192
2
×8
(SCL)
/
1 MHz (Max)
1012 /
10 (
85 °C), 95
(
55 °C), 200
2.7 V 3.6 V
250 μA (Typ @1 MHz)
5 μA (Typ)
40 °C
85 °C
SOP, 8
(FPT-8P-M02)
RoHS
Copyright 2012-2015 FUJITSU SEMICONDUCTOR LIMITED
2015.5
8,192
)
(SDA)
(
2
35 °C)
MB85RC64A
■
(TOP VIEW)
A0
1
8
VDD
A1
2
7
WP
A2
3
6
SCL
VSS
4
5
SDA
(FPT-8P-M02)
■
(
8
)
,
1
3
A0
A2
VSS
VDD
, SDA
VDD, VSS
VSS
4
VSS
5
SDA
6
SCL
A0, A1, A2
“L”
,
,
,
“H”
7
2
“L”
,
,
“L”
8
,
WP
(
VSS
)
,
VDD
DS501-00019-4v0-J
MB85RC64A
■
-
SDA
FRAM
8,192×8
SCL
WP
/
/
A0, A1, A2
■ I2C (Inter-Integrated Circuit)
MB85RC64A
,
,
, I2C
,2
I2C
,
,
,1
,
,
I2C
VDD
SCL
SDA
I2C
DS501-00019-4v0-J
I2C
MB85RC64A
I2C
MB85RC64A
I2C
MB85RC64A
A2
0
A2
0
A2
0
A1
0
A0
0
A1
0
A0
1
A1
1
...
A0
0
3
MB85RC64A
■ I2C
I2C
,2
, SDA
SCL
,
I2C
“L”
SCL
,
, SCL
I2C
, SCL
“L”
SDA
“H”
“H”
“H”
, SDA
, SDA
“L”
“H”
“H”
,
,
,
,
,
SCL
SDA
“H” or “L”
Start
Stop
FRAM
■
(tWC)
,
(ACK)
I2C
,
,
8
8
,
,
,
,
9
9
,
SDA
,
, NACK “H”
Master
1
SCL
2
3
8
SDA
,
,
9
ACK
9
Start
4
ACK
, ACK “L”
, Slave
,
SCL
8
“L”
,
Slave
ACK
,
,
8
(ACK
SDA
)
DS501-00019-4v0-J
MB85RC64A
■
(Slave address)
,8
,
(8
(3
), Read / Write
(4
(1
)
)
,
(4
3
)
4
(3
,
“1010”
)
(3
,
),
8
)
A2, A1, A0
,
,3
,
Read/Write
(1
)
8
, R/W (Read/Write)
“1010”
,
,
,
“0”
, “1”
/
Start
1
2
3
4
5
6
7
8
9
2
1
..
SCL
SDA
ACK
S
1
0
1
0
A2
A1
R/W
A0
..
A
Read/Write
S
A ACK (SDA
“L”
)
■
I2C
,
(8
ACK “L”
,
ACK
,
ACK “L”
8
8
,
DS501-00019-4v0-J
8
ACK “L”
, R/W
,
×2
9
•
8
,
,
ACK
ACK
,
,
,
, ACK
8
)
,
8
8
,
5
MB85RC64A
■ FRAM
FRAM
E2PROM
(Acknowledge Polling)
,
ACK
,
,
(8
■
)
,9
(WP)
“H”
“L”
*
,
,
,
,
VSS
“H”
,
, “L”
“L”
(
)
6
DS501-00019-4v0-J
MB85RC64A
■
Byte Write
(R/W “0”
ACK
S
,
,
Address
High 8bits
1 0 1 0 A2 A1 A0 0 A
A
0 00XXXXX
)
,
ACK
,
Address
Low 8bits
Write
Data 8bits
A
A P
X X X X X X XX
MSB
LSB
S
P
A ACK(SDA
MB85RC64A
Page Write
Byte Write
,
13
, MSB
(
)
3
S
)
“000”
,
,
(0000H)
,
, FRAM
“L”
,8K
FRAM
1 0 1 0 A2 A1 A0 0 A
, ACK
,
Address
High 8bits
A
Address
Low 8bits
A
Write
Data 8bits
Write
Data
A
...
A P
S
P
A
ACK(SDA
“L”
)
,
DS501-00019-4v0-J
7
MB85RC64A
Current Address Read
,
n
,
OFF
, n+1
,
(0000H)
)
Address (
Current
n+1
S
1 0 1 0 A2 A1 A0 1 A
Read
Data 8bits
N P
S
P
A ACK(SDA
“L”
N NACK (SDA
)
“H”
)
Random Read
,
)
, SCL
(R/W “1”
,
NACK (SDA
S
,
“H”
1 0 1 0 A2 A1 A0 0 A
,1
)
,
Address
High 8bits
A
Address
Low 8bits
A S
Read
Data 8bits
1 0 1 0 A2 A1 A0 1 A
N P
S
P
A ACK(SDA
“L”
N NACK (SDA
8
“H”
)
)
DS501-00019-4v0-J
MB85RC64A
Sequential Read
Random Read
,
(R/W "1"
,
...
A
)
,
(0000H)
Read
Data 8bits
A
...
Read
Data
A
Read
Data 8bits
N P
P
A ACK(SDA
N NACK (SDA
“L”
)
“H”
)
■
, I 2C
, (1)
,
, (2)
,
,
,
,
(1)
SDA
“L”
,
SDA
,
“H”
,
9
“
1
“1””
SCL
SDA
Hi-Z
1
Read
Write
(2)
I2C
DS501-00019-4v0-J
“1”
,
9
,
9
MB85RC64A
■
*
VDD
0.5
*
VIN
0.5
VDD
0.5 (
4.0)
V
*
VOUT
0.5
VDD
0.5 (
4.0)
V
TA
40
85
°C
Tstg
55
125
°C
VSS
V
4.0
0V
(
,
,
)
,
,
■
VDD
*1
TA
*2
1
2
VSS
2.7
40
3.3
3.6
⎯
V
°C
85
0V
,
,
,
,
,
,
,
10
DS501-00019-4v0-J
MB85RC64A
■
1.
(
)
⎯
⎯
1
μA
⎯
⎯
1
μA
400 kHz
⎯
100
⎯
μA
1 MHz
⎯
250
375
μA
ISB
SCL, SDA VDD
A0, A1, A2, WP 0 V
VDD
⎯
5
20
μA
“H”
VIH
VDD
2.7 V
3.6 V
VDD×0.8
⎯
VDD 0.5
(
4.0)
V
“L”
VIL
VDD
2.7 V
3.6 V
“L”
VOL
IOL
3 mA
WP, A0, A1, A2
RIN
VIN
VIL (
VIN
VIH (
|ILI|
SCL, SDA
|ILO|
SDA
0V
SCL
SCL
IDD
0V
VDD
VDD
⎯
0.5
0.6
V
⎯
⎯
0.4
V
)
50
⎯
⎯
kΩ
)
1
⎯
⎯
MΩ
2.
FSCL
0
100
0
400
0
1000
kHz
THIGH
4000
⎯
600
⎯
400
⎯
ns
TLOW
4700
⎯
1300
⎯
600
⎯
ns
SCL/SDA
Tr
⎯
1000
⎯
300
⎯
300
ns
SCL/SDA
Tf
⎯
300
⎯
300
⎯
100
ns
Start
THD:STA
4000
⎯
600
⎯
250
⎯
ns
Start
TSU:STA
4700
⎯
600
⎯
250
⎯
ns
SDA
THD:DAT
0
⎯
0
⎯
0
⎯
ns
SDA
TSU:DAT
250
⎯
100
⎯
100
⎯
ns
SDA
TDH:DAT
0
⎯
0
⎯
0
⎯
ns
Stop
TSU:STO
4000
⎯
600
⎯
250
⎯
ns
TAA
⎯
3000
⎯
900
⎯
550
ns
TBUF
4700
⎯
1300
⎯
500
⎯
ns
TSP
⎯
50
⎯
50
⎯
50
ns
SCL
SCL
(SCL
SDA
, SDA
)
,
2.7 V
3.6 V
40 °C
85 °C
0.3 V
2.7 V
5 ns
5 ns
VDD/2
VDD/2
DS501-00019-4v0-J
11
MB85RC64A
3.
TSU:DAT
SCL
SDA
VIH
VIL
Start
THD:DAT
VIH
VIH
VIH
VIH
VIL
VIL
VIL
VIL
VIH
VIH
VIH
VIH
VIL
VIL
VIL
VIL
TSU:STO
TSU:STA THD:STA
Tr
THIGH
SCL
Stop
VIH
VIH
VIL
Tf
TLOW
VIL
VIH
VIH
VIL
VIL
VIH
SDA
Stop
VIH
VIL
Start
VIH
VIL
VIH
VIL
VIL
TBUF
Tr
T
TDH:DAT f
TAA
Tsp
VIH
SCL
VIL
VIL
VIH
SDA
Valid
VIL
VIH
VIL
VIL
1/FSCL
4.
CI/O
CIN
VDD VIN VOUT
0 V,
f
1 MHz, TA
25 °C
⎯
⎯
15
pF
⎯
⎯
15
pF
5. AC
3.3 V
1.1 kΩ
Output
100 pF
12
DS501-00019-4v0-J
MB85RC64A
■
VDD
2V
(
,
VDD
0V
)
tr
tpd
tpu
VDD
VDD
2.7 V
2.7 V
VIH (Min)
VIH (Min)
1.0 V
1.0 V
VIL (Max)
VIL (Max)
0V
0V
SDA, SCL >VDD × 0.8 *
SDA, SCL
SDA, SCL (Max)
OFF
VDD
SDA, SCL : Don't care
SDA, SCL
0.5 V
SDA, SCL
ON
SDA, SCL >VDD × 0.8 *
SDA, SCL
tpd
85
⎯
ns
tpu
85
⎯
ns
tr
10
⎯
μs
,
,
■ FRAM
*1
/
*
1012
⎯
TA
85 °C
10
⎯
TA
85 °C
95
⎯
TA
55 °C
⎯
TA
35 °C
2
200
1
2
FRAM
,
/
/
,
,
■
, WP, A0, A1, A2
VDD
VSS
DS501-00019-4v0-J
13
MB85RC64A
■ ESD
DUT
ESD HBM(
JESD22-A114
2000 V
2000 V
)
ESD MM(
JESD22-A115
200 V
200 V
)
ESD CDM(
JESD22-C101
1000 V
1000 V
)
(
)
⎯
MB85RC64APNF-G-JNE1
JESD78
(
)
⎯
JESD78
(
Proprietary method
)
⎯
(C-V
Proprietary method
)
200 V
200 V
(
)
A
VDD
IIN
14
) VIN
IIN
-
VSS
, IIN
±300 mA
, I/O
VDD
(
)
V
VIN
(
+
DUT
300 mA
(
)
,
IIN
300 mA
,
DS501-00019-4v0-J
MB85RC64A
(C-V
)
A
1
2
VDD
SW
DUT
+
V
VIN
-
(
) SW
2
1
,5
1
2
C
200pF
VDD
(
)
VSS
,
,5
,
■
JEDEC
, Moisture Sensitivity Level 3 (IPC / JEDEC J-STD-020D)
■
, REACH
DS501-00019-4v0-J
, EU RoHS
RoHS
15
MB85RC64A
■
MB85RC64APNF-G-JNE1
SOP, 8
(FPT-8P-M02)
⎯*
MB85RC64APNF-G-JNERE1
SOP, 8
(FPT-8P-M02)
1500
,
16
DS501-00019-4v0-J
MB85RC64A
■
ࡊ࡜ࠬ࠴࠶ࠢ࡮SOP, 8 ࡇࡦ
࡝࡯࠼ࡇ࠶࠴
1.27mm
ࡄ࠶ࠤ࡯ࠫ᏷˜
ࡄ࠶ࠤ࡯ࠫ㐳ߐ
3.9mm ˜ 5.05mm
࡝࡯࠼ᒻ⁁
ࠟ࡞࠙ࠖࡦࠣ
ኽᱛᣇᴺ
ࡊ࡜ࠬ࠴࠶ࠢࡕ࡯࡞࠼
ขઃߌ㜞ߐ
1.75mm MAX
⾰㊂
0.06g
(FPT-8P-M02)
ࡇࡦ
ࡊ࡜ࠬ࠴࠶ࠢ࡮
㧔FPT-8P-M02㧕
+0.25
ᵈ 1㧕* ශኸᴺߪ࡟ࠫࡦᱷࠅࠍ฽߻‫ޕ‬
ᵈ 2㧕* ශኸᴺߪ࡟ࠫࡦᱷࠅࠍ฽߹ߕ‫ޕ‬
ᵈ 3㧕┵ሶ᏷߅ࠃ߮┵ሶෘߐߪࡔ࠶ࠠෘࠍ฽߻‫ޕ‬
ᵈ 4㧕┵ሶ᏷ߪ࠲ࠗࡃಾᢿᱷࠅࠍ฽߹ߕ‫ޕ‬
+.010
+0.03
*1 5.05 –0.20 .199 –.008
0.22 –0.07
+.001
.009 –.003
8
5
*2 3.90±0.30 6.00±0.20
(.154±.012) (.236±.008)
Details of "A" part
45°
1.55±0.20
(Mounting height)
(.061±.008)
0.25(.010)
0.40(.016)
1
"A"
4
1.27(.050)
0.44±0.08
(.017±.003)
0.13(.005)
0~8°
M
0.50±0.20
(.020±.008)
0.60±0.15
(.024±.006)
0.15±0.10
(.006±.004)
(Stand off)
0.10(.004)
C
2002-2012 FUJITSU SEMICONDUCTOR LIMITED F08004S-c-5-10
DS501-00019-4v0-J
න૏㧦mm 㧔inches㧕
ᵈᗧ㧦᜝ᒐౝߩ୯ߪෳ⠨୯ߢߔ‫ޕ‬
17
MB85RC64A
■
[MB85RC64APNF-G-JNE1]
[MB85RC64APNF-G-JNERE1]
RC64A
E11000
300
[FPT-8P-M02]
18
DS501-00019-4v0-J
MB85RC64A
■
1.
1.1
(
(
)
)
520 mm
,
/
SOP, 8
(2)
FPT-8P-M02
/
95
7600
/
30400
1.8
2.6
7.4
6.4
4.4
C
©2006-2010 FUJITSU SEMICONDUCTOR LIMITED
2006 FUJITSU LIMITED F08008-SET1-PET:FJ99L-0022-E0008-1-K-1
F08008-SET1-PET:FJ99L-0022-E0008-1-K-3
t
0.5
(
DS501-00019-4v0-J
mm)
19
MB85RC64A
1.2
IC
SOP
Index mark
1
(
(
1
2
3
(
3
-B
3
E1
,
)
2
,
,
)
)
3
1
-A
*3
,
G
Pb
,
,
,
20
DS501-00019-4v0-J
MB85RC64A
1.3
(
(50mm×100mm)
[C-3
,
(20mm×100mm)]
)
㘈ቴ⵾ຠဳᩰ‫ޓ‬෶ߪ‫ޔ‬ን჻ㅢ⵾ຠဳᩰ
::::::::::::::
C-3
㋦㩖㩢㨺㩙㨺㩂
:::
਄⸥⵾ຠဳᩰ⵾ຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨
㧽㧯‫ޓ‬㧼㧭㧿㧿
0::::::::::::::
0:::::::::: ::::::
ᬌᩏ‫ޓ‬ᷣ
ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨
⵾ຠᢙ㊂
:::REU
::::::::::::::
㘈ቴ⵾ຠဳᩰ‫ޓ‬෶ߪ‫ޔ‬ን჻ㅢ⵾ຠဳᩰ
਄⸥⵾ຠဳᩰߩ㩔㩨㨺㩄㨺㩎㩨
::::::::
൮ⵝᐕ᦬ᣣ
#55'/$.'&+0ZZZZZ
:::::::::::::::
㘈ቴ⵾ຠဳᩰ‫ޓ‬෶ߪ‫ޔ‬ን჻ㅢ⵾ຠဳᩰ
ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨
::::
::::::::::
൮ⵝㅊ⇟
::::::::::
::::::::::
ን჻ㅢ▤ℂ⇟ภ
⵾ຠ㩥㨹㩎ᖱႎ㧗⵾ຠᢙ㊂
:::::::::::::: ․⸥੐㗄
-A
[D
] (100mm×100mm)
⊒ᵈ⠪‫ޓޓ‬:::::::::::::
ㅍઃవฬ
%756
ን჻ㅢ
࠮ࡒࠦࡦ࠳ࠢ࠲࡯ᩣᑼળ␠
ฃᷰ႐ᚲฬ‫ޓޓ‬:::::::::
ㅍઃవ૑ᚲ
&'.+8'4;21+06㧕
⚊ຠࠠ࡯⇟ภ‫ޓ‬::::::::::::::
64#0501
ຠฬ㩄㨺㩎㩨‫ޓޓޓ‬::::::::::::::
2#4601‫⵾
ޓޓޓ‬ຠဳᩰ
ຠฬ 2#460#/'::::::::::::::
⵾ຠဳᩰ
:::㧛:::
౉ᢙ㧛⚊౉ᢙ㊂
36;616#.36;
%7561/'454'/#4-5
⊒ᵈ⠪↪஻⠨
::::::::::::::::::::
D
ฃᵈ⠪
8'0&14
:::::::
ን჻ㅢ▤ℂ⇟ภ
:::::::
ን჻ㅢ▤ℂ⇟ภ
:::::::
ን჻ㅢ▤ℂ⇟ภ
:::::::::::::::
‫⵾
ޓ‬ຠဳᩰ
න૏
70+6
::
ᪿ൮୘ᢙ 2#%-#)'%1706
:::㧛:::
0:::::::::::::::::
ን჻ㅢ▤ℂ⇟ภ⵾ຠᢙ㊂
0:::::::::::::::::
⵾ຠဳᩰ⵾ຠᢙ㊂
ን჻ㅢ▤ℂ⇟ภ⵾ຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨
⵾ຠဳᩰ⵾ຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨
ን჻ㅢ▤ℂ⇟ภ
0::::::::::
ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨
-B
::::::::::::::㧔⵾ຠဳᩰ㧕
㧔▫ᢙ㧕‫ޓޓޓ‬㧔ᢙ㊂㧕
‫ޓ‬:▫‫ޓޓޓޓޓ‬:::୘
‫ޓ‬:▫‫ޓޓޓޓޓ‬:::୘
‫ޓޓޓޓޓ⸘ޓޓ‬:::୘
㧔⵾ຠ㩥㨹㩎ᖱႎ㧕
‫ޓޓޓ‬:::::::
‫ޓޓޓ‬:::::::
(
)
DS501-00019-4v0-J
,
-A, B
21
MB85RC64A
1.4
(1)
H
W
L
L
W
H
540
125
75
(
mm)
(2)
H
W
L
L
W
H
565
270
180
(
22
mm)
DS501-00019-4v0-J
MB85RC64A
2.
2.1
No
FPT-8P-M02
3
/
/
/
1500
1500
10500
ø1.5 +0.1
–0
8±0.1
1.75±0.1
2±0.05
4±0.1
B
0.3±0.05
A
B
A
5.5±0.1
12 +0.3
–0.1
5.5±0.05
ø1.5 +0.1
–0
SEC.B-B
2.1±0.1
6.4±0.1
0.4
3.9±0.2
SEC.A-A
C
2012 FUJITSU SEMICONDUCTOR LIMITED SOL8-EMBOSSTAPE9 : NFME-EMB-X0084-1-P-1
mm
DS501-00019-4v0-J
23
MB85RC64A
2.2 IC
Index mark
ER
(
)
(
)
(
)
2.3
࡝࡯࡞ⓣኸᴺ
E
D
W2
C
B
A
W1
12
13
14
15
56
12
16
24
r
W3
㧦ࡂࡉㇱߩ᏷ኸᴺ
mm
No
1
2
3
8
A
254
±2
4
5
12
254
±2
6
7
16
330
±2
254
±2
330
±2
254
±2
10
11
32
44
330
±2
330±2
100 +2
-0
150 +2
-0
100 +2
-0
150 +2
-0
100 +2
-0
100±2
C
13±0.2
13 +0.5
-0.2
D
21±0.8
20.5 +1
-0.2
E
W1
W2
W3
r
24
9
24
100 +2
-0
B
8
2±0.5
8.4 +2
-0
14.4
7.9
10.9
12.4 +2
-0
18.4
11.9
16.4 +2
-0
22.4
15.4
15.9
24.4 +2
-0
30.4
19.4
23.9
32.4 +2
-0
38.4
27.4
31.9
44.4 +2
-0
50.4
35.4
43.9
47.4
56.4 +2
-0
12.4 +1
-0
+0.1
16.4 +1
-0 24.4 -0
62.4
18.4
22.4
30.4
55.9
59.4
12.4
14.4
16.4
18.4
24.4
26.4
1.0
DS501-00019-4v0-J
MB85RC64A
2.4
(φ330mm
)
φ330 mm
1,
1,
4
1,
4
4
1,
4
(
-A
1
2
3
4
(
E1
4
-B
)
2,
3
4
,
G
Pb
,
,
)
,
,
,
,
,
DS501-00019-4v0-J
25
MB85RC64A
2.5
(
(50mm×100mm)
[C-3
,
(20mm×100mm)]
)
㘈ቴ⵾ຠဳᩰ‫ޓ‬෶ߪ‫ޔ‬ን჻ㅢ⵾ຠဳᩰ
::::::::::::::
0::::::::::::::
㋦㩖㩢㨺㩙㨺㩂
:::
਄⸥⵾ຠဳᩰ⵾ຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨
㧽㧯‫ޓ‬㧼㧭㧿㧿
0:::::::::: ::::::
C-3
ᬌᩏ‫ޓ‬ᷣ
ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨
⵾ຠᢙ㊂
:::REU
::::::::::::::
㘈ቴ⵾ຠဳᩰ‫ޓ‬෶ߪ‫ޔ‬ን჻ㅢ⵾ຠဳᩰ
਄⸥⵾ຠဳᩰߩ㩔㩨㨺㩄㨺㩎㩨
::::::::
൮ⵝᐕ᦬ᣣ
#55'/$.'&+0ZZZZZ
:::::::::::::::
㘈ቴ⵾ຠဳᩰ‫ޓ‬෶ߪ‫ޔ‬ን჻ㅢ⵾ຠဳᩰ
ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨
::::
::::::::::
൮ⵝㅊ⇟
::::::::::
::::::::::
ን჻ㅢ▤ℂ⇟ภ
⵾ຠ㩥㨹㩎ᖱႎ㧗⵾ຠᢙ㊂
:::::::::::::: ․⸥੐㗄
-A
[D
] (100mm×100mm)
⊒ᵈ⠪‫ޓޓ‬:::::::::::::
ㅍઃవฬ
%756
ን჻ㅢ
࠮ࡒࠦࡦ࠳ࠢ࠲࡯ᩣᑼળ␠
ฃᷰ႐ᚲฬ‫ޓޓ‬:::::::::
ㅍઃవ૑ᚲ
&'.+8'4;21+06㧕
⚊ຠࠠ࡯⇟ภ‫ޓ‬::::::::::::::
64#0501
ຠฬ㩄㨺㩎㩨‫ޓޓޓ‬::::::::::::::
2#4601‫⵾
ޓޓޓ‬ຠဳᩰ
ຠฬ 2#460#/'::::::::::::::
⵾ຠဳᩰ
:::㧛:::
౉ᢙ㧛⚊౉ᢙ㊂
36;616#.36;
%7561/'454'/#4-5
⊒ᵈ⠪↪஻⠨
::::::::::::::::::::
D
ฃᵈ⠪
8'0&14
:::::::
ን჻ㅢ▤ℂ⇟ภ
:::::::
ን჻ㅢ▤ℂ⇟ภ
:::::::
ን჻ㅢ▤ℂ⇟ภ
:::::::::::::::
‫⵾
ޓ‬ຠဳᩰ
න૏
70+6
::
ᪿ൮୘ᢙ 2#%-#)'%1706
:::㧛:::
0:::::::::::::::::
ን჻ㅢ▤ℂ⇟ภ⵾ຠᢙ㊂
0:::::::::::::::::
⵾ຠဳᩰ⵾ຠᢙ㊂
ን჻ㅢ▤ℂ⇟ภ⵾ຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨
⵾ຠဳᩰ⵾ຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨
ን჻ㅢ▤ℂ⇟ภ
0::::::::::
ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨
-B
::::::::::::::㧔⵾ຠဳᩰ㧕
㧔▫ᢙ㧕‫ޓޓޓ‬㧔ᢙ㊂㧕
‫ޓ‬:▫‫ޓޓޓޓޓ‬:::୘
‫ޓ‬:▫‫ޓޓޓޓޓ‬:::୘
㧔⵾ຠ㩥㨹㩎ᖱႎ㧕
‫ޓޓޓ‬:::::::
‫ޓޓޓ‬:::::::
(
26
)
,
‫ޓޓޓޓޓ⸘ޓޓ‬:::୘
-A, B
DS501-00019-4v0-J
MB85RC64A
2.6
(1)
H
W
L
L
W
H
12, 16
40
24, 32
365
44
50
345
65
56
75
(
mm)
(2)
H
W
L
L
W
H
415
400
315
(
DS501-00019-4v0-J
mm)
27
MB85RC64A
■
,
10
11
“H”
1.
(typ
“H”
14
“L”
ESD
CDM
)
“L”
(CV
)
15
17
28
DS501-00019-4v0-J
MB85RC64A
MEMO
DS501-00019-4v0-J
29
MB85RC64A
MEMO
30
DS501-00019-4v0-J
MB85RC64A
MEMO
DS501-00019-4v0-J
31
MB85RC64A
富士通セミコンダクター株式会社
0120-198-610
222-0033
2-100-45
:
http://jp.fujitsu.com/fsl/
9
PHS
17
(
,
)
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
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