RoHS 1N4150 D T ,. L High-speed switching diode Features 1. High reliability 2. High forward current capability Applications High speed switch and general purpose use IC in computer and industrial applications Construction Silicon epitaxial planar Absolute Maximum Ratings R T Tj=25℃ Parameter Test Conditions Repetitive peak reverse voltage N Type C E L Reverse voltage Peak forward surge current Forward current Average forward current Power dissipation O tp=1μs VR=0 E Junction temperature Storage temperature range J E C O Symbol Value Unit VRRM 50 V VR 40 V IFSM 4 A IF 600 mA IFAV 300 mA PV 500 mW Tj 175 ℃ Tstg -65~+175 ℃ Maximum Thermal Resistance Tj=25℃ W Parameter Junction ambient Test Conditions Symbol Value Unit on PC board 50mm×50mm×1.6mm RthJA 500 K/W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS 1N4150 Figure 3. Reverse current vs. junction temperature C E L O N Figure 4. Diode capacitance vs. reverse voltage (Typical values) R T Dimensions in mm IC C D T ,. L O Cathode identification Cathode φ2.0 max. J E W E 26 min. φ0.55 max. Anode 4.2 max. 26 min. Standard Glass Case JEDEC DO 35 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS 1N4150 Electrical Characteristics D T ,. L Tj=25℃ Parameter Max Unit 0.54 0.62 V VF 0.66 0.74 V IF=50mA VF 0.76 0.86 V IF=100mA VF 0.82 0.92 V IF=200mA VF 0.87 VR=50V IR VR=50V, Tj=150℃ IR Diode capacitance VR=0, f=1MHz, VHF=50mV CD Reverse recovery time IF= IR=10…100mA, iR=1mA, trr Forward voltage Test Conditions Reverse current Type Symbol Min IF=1mA VF IF=10mA IC RL=100Ω Typ C O 1.0 V 100 nA 100 μA 2.5 pF 4 ns N Characteristics (Tj=25℃ unless otherwise specified) R T J E C E L E Figure 1. Maximum permissible continuous forward current vs. ambient temperature O Figure 2. Forward current vs. forward voltage W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]