MM914 FORMOSA MICROSEMI High-speed switching diode Features 1. Small surface mounting type 2. High reliability 3. High speed (t rr= 4 ns) Applications Extreme fast switches Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25? Parameter Test Conditions Symbol Value Unit Repetitive peak reverse voltage VRRM 75 V DC blocking voltage VR 75 V Non repetitive peak forward surge t=1s IFSM 1 A current t=1µ s IFSM 4 mA IF 300 mA IFAV 200 mA Power dissipation PV 500 mW Junction temperature Tj 175 ? Tstg -65~+175 ? Forward current Average rectified current Half wave rectification with resistive load and f>50 MHz Storage temperature range Maximum Thermal Resistance Tj=25? Parameter Junction ambient Test Conditions Symbol Value Unit on PC board 50mm× 50mm× 1.6mm RthJ A 500 K/W FORMOSA MS 1 MM914 FORMOSA MICROSEMI Electrical Characteristics Tj=25? Parameter Test Conditions Symbol Min Typ Max Unit 1 V Forward voltage IF =10mA VF Breakdown voltage IR =100µ A VR Peak reverse current VR =75V IR 5 µ A VR =20V, Tj=150? IR 50 µ A VR =20V IR 25 nA Diode capacitance VR =0, f=1MHz CD 4 pF Reverse recovery time IF =10mA, VR =6V, i R =0.1× IR , RL=100O trr 4 ns 100 V Dimensions in mm Cathode band Glass Case Mini Melf / SOD 80 JEDEC DO 213 AA FORMOSA MS 2