1N5832 thru 1N5834R
Silicon Power
Schottky Diode
VRRM = 20 V - 40 V
IF(AV) = 40 A
Features
• High Surge Capability
• Types from 20 V to 40V VRRM
DO-5 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Conditions
Symbol
("R" devices have leads reversed)
1N5832 (R)
1N5833 (R)
1N5834 (R)
Unit
Repetitive peak reverse voltage
VRRM
20
30
40
V
RMS reverse voltage
VRMS
14
21
28
V
DC blocking voltage
Operating temperature
Storage temperature
VDC
Tj
Tstg
20
-55 to 150
-55 to 150
30
-55 to 150
-55 to 150
40
-55 to 150
-55 to 150
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Conditions
1N5832 (R)
1N5833 (R)
1N5834 (R)
Unit
Average forward current (per
pkg)
IF(AV)
TC = 125 °C
40
40
40
A
Peak forward surge current (per
leg)
IFSM
tp = 8.3 ms, half sine
800
800
800
A
Maximum instantaneous forward
voltage (per leg)
VF
IF = 40 A, Tj = 25 °C
0.70
0.70
0.70
V
IR
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
1
10
20
1
10
20
1
10
20
mA
1.45
1.45
1.45
°C/W
30
30
30
Parameter
Maximum instantaneous reverse
current at rated DC blocking
voltage (per leg)
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
Mounting torque
RΘJC
Inch ponds
(in-pb)
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1N5832 thru 1N5834R
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1N5832 thru 1N5834R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
DO- 5 (DO-203AB)
M
J
K
P
D
B
G
N
F
C
E
A
Inches
Min
Millimeters
Max
Min
A
Max
1/4 –28 UNF
B
0.669
0.687
17.19
17.44
C
-----
0.794
-----
20.16
D
-----
1.020
-----
25.91
E
0.422
0.453
10.72
11.50
F
0.115
0.200
2.93
5.08
G
-----
0.460
-----
11.68
J
-----
0.280
-----
7.00
K
0.236
-----
6.00
-----
M
-----
0.589
-----
14.96
N
-----
0.063
-----
1.60
P
0.140
0.175
3.56
4.45
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