1N5829 thru 1N5831R
Silicon Power
Schottky Diode
VRRM = 20 V - 40 V
IF = 25 A
Features
• High Surge Capability
• Types up to 40V VRRM
DO-4 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
("R" devices have leads reversed)
Conditions
1N5829 (R)
1N5830 (R)
1N5831 (R)
Unit
Repetitive peak reverse voltage
VRRM
20
25
35
V
RMS reverse voltage
VRMS
14
17
25
V
DC blocking voltage
VDC
20
25
35
V
Continuous forward current
IF
TC ≤ 100 °C
25
25
25
A
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
TC = 25 °C, tp = 8.3 ms
800
800
800
A
Operating temperature
Storage temperature
Tj
Tstg
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Conditions
1N5829 (R)
1N5830 (R)
1N5831 (R)
Unit
IF = 25 A, Tj = 25 °C
VR = 20 V, Tj = 25 °C
VR = 20 V, Tj = 125 °C
0.58
2
250
0.58
2
250
0.58
2
250
V
1.8
1.8
1.8
Symbol
Diode forward voltage
VF
Reverse current
IR
mA
Thermal characteristics
Thermal resistance, junction case
RthJC
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1
°C/W
1N5829 thru 1N5831R
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2
1N5829 thru 1N5831R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
DO- 4 (DO-203AA)
M
J
P
D
B
G
N
C
E
F
A
Inches
Min
Millimeters
Max
Min
A
Max
10-32 UNF
B
0.424
0.437
10.77
11.10
C
-----
0.505
-----
12.82
D
------
0.800
-----
20.30
E
0.453
0.492
11.50
12.50
F
0.114
0.140
2.90
3.50
G
-----
0.405
-----
10.29
J
-----
0.216
-----
5.50
M
-----
φ0.302
-----
φ7.68
N
0.031
0.045
0.80
1.15
P
0.070
0.79
1.80
2.00
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