MBR3520 thru MBR3540R Silicon Power Schottky Diode VRRM = 20 V - 40 V IF = 35 A Features • High Surge Capability • Types from 20 V to 40 V VRRM DO-4 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR3520(R) MBR3530(R) MBR3535(R) MBR3540(R) Unit Repetitive peak reverse voltage VRRM 20 30 35 40 V RMS reverse voltage VRMS 14 21 25 28 V DC blocking voltage VDC 40 V 20 30 35 Continuous forward current IF TC ≤ 110 °C 35 35 35 35 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.3 ms 600 600 600 600 A Operating temperature Storage temperature Tj Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Diode forward voltage VF Reverse current IR MBR3535(R) MBR3540(R) Conditions MBR3520(R) MBR3530(R) IF = 35 A, Tj = 25 °C VR = 20 V, Tj = 25 °C VR = 20 V, Tj = 125 °C 0.68 1.5 25 0.68 1.5 25 0.68 1.5 25 0.68 1.5 25 1.5 1.5 1.5 1.5 Unit V mA Thermal characteristics Thermal resistance, junction case RthJC www.genesicsemi.com/silicon-products/schottky-rectifiers/ 1 °C/W MBR3520 thru MBR3540R www.genesicsemi.com/silicon-products/schottky-rectifiers/ 2 MBR3520 thru MBR3540R Package dimensions and terminal configuration Product is marked with part number and terminal configuration. DO- 4 (DO-203AA) M J P D B G N C E F A Inches Millimeters Min Max Min Max B 0.424 0.437 10.77 11.10 C ----- 0.505 ----- 12.82 D ------ 0.800 ----- 20.30 E 0.453 0.492 11.50 12.50 A 10-32 UNF F 0.114 0.140 2.90 3.50 G ----- 0.405 ----- 10.29 J ----- 0.216 ----- 5.50 M ----- φ0.302 ----- φ7.68 N 0.031 0.045 0.80 1.15 P 0.070 0.79 1.80 2.00 www.genesicsemi.com/silicon-products/schottky-rectifiers/ 3