MBR6020 thru MBR6040R Silicon Power Schottky Diode VRRM = 20 V - 40 V IF = 60 A Features • High Surge Capability • Types from 20 V to 40V VRRM DO-5 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR6020 (R) MBR6030 (R) MBR6035 (R) MBR6040 (R) Unit Repetitive peak reverse voltage VRRM 20 30 35 40 V RMS reverse voltage VRMS 14 21 25 28 V DC blocking voltage VDC 40 V 20 30 35 Continuous forward current IF TC ≤ 100 °C 60 60 60 60 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.3 ms 700 700 700 700 A Operating temperature Storage temperature Tj Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Conditions Symbol Diode forward voltage VF Reverse current IR MBR6020 (R) MBR6030(R) MBR6035 (R) MBR6040 (R) IF = 60 A, Tj = 25 °C VR = 20 V, Tj = 25 °C VR = 20 V, Tj = 125 °C 0.65 5 150 0.65 5 150 0.65 5 150 0.65 5 150 1.0 1.0 1.0 1.0 Unit V mA Thermal characteristics Thermal resistance, junction case RthJC www.genesicsemi.com/silicon-products/schottky-rectifiers/ 1 °C/W MBR6020 thru MBR6040R www.genesicsemi.com/silicon-products/schottky-rectifiers/ 2 MBR6020 thru MBR6040R Package dimensions and terminal configuration Product is marked with part number and terminal configuration. DO- 5 (DO-203AB) M J K P D B G N F C E A Inches Min Millimeters Max Min A Max 1/4 –28 UNF B 0.669 0.687 17.19 17.44 C ----- 0.794 ----- 20.16 D ----- 1.020 ----- 25.91 E 0.422 0.453 10.72 11.50 F 0.115 0.200 2.93 5.08 G ----- 0.460 ----- 11.68 J ----- 0.280 ----- 7.00 K 0.236 ----- 6.00 ----- M ----- 0.589 ----- 14.96 N ----- 0.063 ----- 1.60 P 0.140 0.175 3.56 4.45 www.genesicsemi.com/silicon-products/schottky-rectifiers/ 3