MBR6045 thru MBR60100R
Silicon Power
Schottky Diode
VRRM = 45 V - 100 V
IF = 60 A
Features
• High Surge Capability
• Types from 45 V to 100 V VRRM
DO-5 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBR6045 (R) MBR6060 (R) MBR6080 (R) MBR60100 (R)
Unit
Repetitive peak reverse voltage
VRRM
45
60
80
100
V
RMS reverse voltage
VRMS
32
42
50
70
V
DC blocking voltage
VDC
100
V
45
60
80
Continuous forward current
IF
TC ≤ 100 °C
60
60
60
60
A
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
TC = 25 °C, tp = 8.3 ms
700
700
700
700
A
Operating temperature
Storage temperature
Tj
Tstg
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Conditions
Symbol
Diode forward voltage
VF
Reverse current
IR
MBR6045 (R) MBR6060(R) MBR6080 (R) MBR60100 (R)
IF = 60 A, Tj = 25 °C
VR = 20 V, Tj = 25 °C
VR = 20 V, Tj = 125 °C
0.65
5
150
0.75
5
150
0.84
5
150
0.84
5
150
1.0
1.0
1.0
1.0
Unit
V
mA
Thermal characteristics
Thermal resistance, junction case
RthJC
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°C/W
MBR6045 thru MBR60100R
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2
MBR6045 thru MBR60100R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
DO- 5 (DO-203AB)
M
J
K
P
D
B
G
N
F
C
E
A
Inches
Min
Millimeters
Max
A
Min
Max
1/4 –28 UNF
B
0.669
0.687
17.19
17.44
C
-----
0.794
-----
20.16
D
-----
1.020
-----
25.91
E
0.422
0.453
10.72
11.50
F
0.115
0.200
2.93
5.08
G
-----
0.460
-----
11.68
J
-----
0.280
-----
7.00
K
0.236
-----
6.00
-----
M
-----
0.589
-----
14.96
N
-----
0.063
-----
1.60
P
0.140
0.175
3.56
4.45
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