MBR20020CT thru MBR20040CTR
Silicon Power
Schottky Diode
VRRM = 20 V - 40 V
IF(AV) = 200 A
Features
• High Surge Capability
• Types from 20 to 40 V VRRM
Twin Tower Package
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
Conditions
MBR20020CT(R) MBR20030CT(R) MBR20035CT(R) MBR20040CT(R)
Unit
VRRM
20
30
35
40
V
VRMS
14
21
25
28
V
VDC
Tj
Tstg
20
-55 to 150
-55 to 150
30
-55 to 150
-55 to 150
35
-55 to 150
-55 to 150
40
-55 to 150
-55 to 150
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Conditions
IF(AV)
TC = 125 °C
200
200
200
200
A
IFSM
tp = 8.3 ms, half sine
1500
1500
1500
1500
A
Maximum forward
voltage (per leg)
VF
IFM = 100 A, Tj = 25 °C
0.70
0.70
0.70
0.70
V
Reverse current at rated
DC blocking voltage
(per leg)
IR
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
1
10
30
1
10
30
1
10
30
1
10
30
mA
0.45
0.45
0.45
0.45
°C/W
Parameter
Average forward current
(per pkg)
Peak forward surge
current (per leg)
MBR20020CT(R) MBR20030CT(R) MBR20035CT(R) MBR20040CT(R)
Unit
Thermal characteristics
Thermal resistance,
junction-case, per leg
RthJC
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MBR20020CT thru MBR20040CTR
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MBR20020CT thru MBR20040CTR
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
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