MUR10005CT thru MUR10020CTR
Silicon Super Fast
Recovery Diode
VRRM = 50 V - 600 V
IF = 100 A
Features
• High Surge Capability
• Types up to 600 V VRRM
Twin Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive
p
p
peak reverse
voltage
RMS reverse voltage
DC blocking voltage
MUR10005CT (R)
MUR10010CT (R)
MUR10020CT (R)
Unit
VRRM
50
100
200
V
VRMS
35
70
140
V
VDC
50
100
200
V
Symbol
Conditions
Continuous forward current
IF
TC ≤ 140 °C
100
100
100
A
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
TC = 25 °C, tp = 8.3 ms
400
400
400
A
Operating temperature
Storage temperature
Tj
Tstg
-40 to 175
-40 to 175
-40 to 175
-40 to 175
-40 to 175
-40 to 175
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
Conditions
MUR10005CT (R)
MUR10010CT (R)
MUR10020CT (R)
Unit
VF
IF = 50 A, Tj = 25 °C
VR = 50 V, Tj = 25 °C
VR = 50 V, Tj = 125 °C
1.3
25
1
1.3
25
1
1.3
25
1
μA
mA
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
75
75
75
nS
IR
V
Recovery Time
Maximum reverse recovery
time
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TRR
1
MUR10005CT thru MUR10020CTR
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2