1N3879 thru 1N3883R
Silicon Fast
Recovery Diode
VRRM = 50 V - 400 V
IF = 6 A
Features
• High Surge Capability
• Types up to 400 V VRRM
DO-4 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive
p
p
peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Symbol
Conditions
1N3879 (R) 1N3880 (R) 1N3881 (R) 1N3882 (R) 1N3883 (R) Unit
VRRM
50
VRMS
35
70
VDC
50
100
100
300
400
140
210
280
V
200
300
400
V
200
V
Continuous forward current
IF
TC ≤ 100 °C
6
6
6
6
6
A
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
TC = 25 °C, tp = 8.3 ms
90
90
90
90
90
A
Operating temperature
Storage temperature
Tj
Tstg
-65 to 150
-65 to 175
-65 to 150
-65 to 175
-65 to 150
-65 to 175
-65 to 150
-65 to 175
-65 to 150
-65 to 175
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
1N3879 (R) 1N3880 (R) 1N3881 (R) 1N3882 (R) 1N3883 (R) Unit
Symbol
Conditions
VF
IF = 6 A, Tj = 25 °C
VR = 50 V, Tj = 25 °C
VR = 50 V, Tj = 150 °C
1.4
15
3
1.4
15
3
1.4
15
3
1.4
15
3
1.4
15
3
μA
mA
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
200
200
200
200
200
nS
2.5
2.5
2.5
2.5
2.5
°C/W
IR
V
Recovery Time
Maximum reverse recovery
time
TRR
Thermal characteristics
Thermal resistance, junction
- case
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RthJC
1
1N3879 thru 1N3883R
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2