MBR20045CT thru MBR200100CTR Silicon Power Schottky Diode VRRM = 45 V - 100 V IF(AV) = 200 A Features • High Surge Capability • Types from 45 V to 100 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature Symbol Conditions MBR20045CT(R) MBR20060CT(R) MBR20080CT(R) MBR200100CT(R) Unit VRRM 45 60 80 100 V VRMS 32 42 57 70 V VDC Tj Tstg 45 -55 to 150 -55 to 150 60 -55 to 150 -55 to 150 80 -55 to 150 -55 to 150 100 -55 to 150 -55 to 150 V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified MBR20045CT(R) MBR20060CT(R) MBR20080CT(R) MBR200100CT(R) Symbol Conditions IF(AV) TC = 125 °C 200 200 200 200 A IFSM tp = 8.3 ms, half sine 1500 1500 1500 1500 A Maximum forward voltage (per leg) VF IFM = 100 A, Tj = 25 °C 0.70 0.75 0.84 0.84 V Reverse current at rated DC blocking voltage (per leg) IR Tj = 25 °C Tj = 100 °C Tj = 150 °C 1 10 30 1 10 30 1 10 30 1 10 30 mA 0.45 0.45 0.45 0.45 °C/W Parameter Average forward current (per pkg) Peak forward surge current (per leg) Unit Thermal characteristics Thermal resistance, junction-case, per leg RΘJC www.genesicsemi.com/silicon-products/schottky-rectifiers/ 1 MBR20045CT thru MBR200100CTR www.genesicsemi.com/silicon-products/schottky-rectifiers/ 2 MBR20045CT thru MBR200100CTR Package dimensions and terminal configuration Product is marked with part number and terminal configuration. www.genesicsemi.com/silicon-products/schottky-rectifiers/ 3