FST8345M thru FST83100M Silicon Power Schottky Diode VRRM = 45 V - 100 V IF(AV) = 80 A Features • High Surge Capability • Types from 45 V to 100V VRRM D61-3M Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions FST8345M FST8360M FST8380M FST83100M Unit Repetitive peak reverse voltage VRRM 45 60 80 100 V RMS reverse voltage VRMS 32 42 56 70 V DC blocking voltage Operating temperature Storage temperature VDC Tj Tstg 60 -55 to 150 -55 to 150 80 -55 to 150 -55 to 150 100 -55 to 150 -55 to 150 V °C °C FST8380M FST83100M 45 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions FST8345M FST8360M Unit Average forward current (per pkg) IF(AV) TC = 125 °C 80 80 80 80 A Peak forward surge current (per leg) IFSM tp = 8.3 ms, half sine 600 600 600 600 A Maximum instantaneous forward voltage (per leg) VF IFM = 40 A, Tj = 25 °C 0.72 0.78 0.84 0.84 V Maximum Instantaneous reverse current at rated DC blocking voltage (per leg) IR Tj = 25 °C Tj = 100 °C 1 10 1 10 1 10 1 10 mA 30 30 30 30 1.10 1.10 1.10 1.10 Tj = 150 °C Thermal characteristics Thermal resistance, junction case (per leg) RΘJC www.genesicsemi.com/silicon-products/schottky-rectifiers/ 1 °C/W FST8345M thru FST83100M www.genesicsemi.com/silicon-products/schottky-rectifiers/ 2 FST8345M thru FST83100M Package dimensions and terminal configuration Product is marked with part number and terminal configuration. www.genesicsemi.com/silicon-products/schottky-rectifiers/ 3