FST8345M thru FST83100M

FST8345M thru FST83100M
Silicon Power
Schottky Diode
VRRM = 45 V - 100 V
IF(AV) = 80 A
Features
• High Surge Capability
• Types from 45 V to 100V VRRM
D61-3M Package
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
FST8345M
FST8360M
FST8380M FST83100M
Unit
Repetitive peak reverse voltage
VRRM
45
60
80
100
V
RMS reverse voltage
VRMS
32
42
56
70
V
DC blocking voltage
Operating temperature
Storage temperature
VDC
Tj
Tstg
60
-55 to 150
-55 to 150
80
-55 to 150
-55 to 150
100
-55 to 150
-55 to 150
V
°C
°C
FST8380M FST83100M
45
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
FST8345M
FST8360M
Unit
Average forward current (per
pkg)
IF(AV)
TC = 125 °C
80
80
80
80
A
Peak forward surge current (per
leg)
IFSM
tp = 8.3 ms, half sine
600
600
600
600
A
Maximum instantaneous
forward voltage (per leg)
VF
IFM = 40 A, Tj = 25 °C
0.72
0.78
0.84
0.84
V
Maximum Instantaneous
reverse current at rated DC
blocking voltage (per leg)
IR
Tj = 25 °C
Tj = 100 °C
1
10
1
10
1
10
1
10
mA
30
30
30
30
1.10
1.10
1.10
1.10
Tj = 150 °C
Thermal characteristics
Thermal resistance, junction case (per leg)
RΘJC
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°C/W
FST8345M thru FST83100M
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2
FST8345M thru FST83100M
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
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