Millimeter-wave building blocks design methodology in CMOS 65nm process using Agilent tools Baudouin Martineau STMicroelectronics – Crolles/Minatec Innovation & External partnership design group ADS users’ group meeting June 16th ,2009 Outline • Introduction – Millimeter Wave Wireless Market – Technology Requirements • The 65nm CMOS Technology for mm-wave frequencies – Active components from Design Kit available in ADS – Passive components from Design Kit available in ADS – Custom passive components using Momentum • 60GHz Low Noise Amplifier design methodology in CMOS 65nm using ADS – Specifications – Topology and MOSFET choices – Design techniques using ADS tools • Conclusion Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 1 Millimeter wave Wireless Market • Major markets: – 60GHz: Wireless HD/WLAN/WPAN/Fast file transfer www.itrs.net – 2007 report Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 2 Millimeter wave Wireless Market • Major markets: – 60GHz: Wireless HD/WLAN/WPAN/Fast file transfer – 77GHz: Automotive radar www.itrs.net – 2007 report Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 3 Millimeter wave Wireless Market • Major markets: – 60GHz: Wireless HD/WLAN/WPAN/Fast file transfer – 77GHz: Automotive radar – Potential long term 94GHz mm-wave imaging www.itrs.net – 2007 report Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 4 Mm-wave applications: Technology requirements (1) • Today MOSFET have demonstrated performances required for mm-wave applications CMOS 65nm LP: fT and fmax of 160GHz and 200GHz respectively ITRS roadmap 2006 700 450 CMOS SOI PD 130 IBM 400 600 CMOS SOI PD DTMOS 130 Fujitsu CMOS SOI LP PD 130 ST 500 fT [G Hz] fm a x [G H z ] 350 400 300 300 250 CMOS SOI HP 90 IBM 200 CMOS SOI HP 65 IBM 150 200 100 100 50 0 0 0 20 40 60 Physical Gate Length (nm) 80 100 CMOS 65 Intel CMOS SOI LP 65 ST 0 20 40 60 80 Physical Gate Length (nm) 100 CMOS LP 65 ST CMOS SOI HP 65 IBM CMOS LP 45 ST CMOS 45 IBM Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 5 Mm-wave applications: Technology requirements (2) Capping • The vertical shrink of the Back-End Of Line (BEOL) from one CMOS node to the next one penalizes performances: – The small metal pitch and the thin dielectrics degrade ohmic losses in inductors and microstrip transmission lines Aluminum M6 Copper Tungsten – The bulk upper section low resistivity increases attenuation constant in coplanar transmission lines • M5 V4 Solution: – Increasing the BEOL M4 V3 • Dedicated technology : BiCMOS9MW M3 V2 M2 V1 M1 • 7 or more metal layer BEOL : CMOS (32/45/65nm) – Increasing the substrate resistivity (CMOS SOI) V5 CT CMOS65 65nm node BiCMOS9MW BiCMOS9 130nm node mmW dedicated BEOL Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 6 Outline • Introduction – Millimeter Wave Wireless Market – Technology Requirements • The 65nm CMOS Technology for mm-wave frequencies – Active components from Design Kit available in ADS – Passive components from Design Kit available in ADS – Custom passive components using Momentum • 60GHz Low Noise Amplifier design methodology in CMOS 65nm using ADS – Specifications – Topology and MOSFET choices – Design techniques using ADS tools • Conclusion Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 7 The 65nm CMOS Technology for mm-wave frequencies Active components from CMOS 65nm Design Kit : – 2 Families : Low Power (LP) and General Purpose (GP) Dedicated to analog/RF applications Dedicated to digital applications RF MOSFET available for Agilent ADS in Design Kit: • NLVTLP_RF NMOS, Low Vt, Low Power (Thin gate oxide Vdd=1.2V) • SVTLP_RF NMOS, Standard Vt, Low Power (Thin gate oxide Vdd=1.2V and double gate oxide Vdd=1.8V or Vdd=2.5V) • HVTLP_RF NMOS, High Vt, Low Power (Thin gate oxide Vdd=1.2V) NLVTLP offers the best RF performance (fT,fmax,NFmin) HVTLP offers the best “low power” performance (low leakage) Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 8 The 65nm CMOS Technology for mm-wave frequencies • Design Kit parametric cell and associated RF model offers : B B S G D G Active zone Vth implant Poly-Silicon N++ implant P++ implant Contacts First metal layer S G D -Auto generation: 1 or 2 gate contact 1 or 2 Source and drain contact Bulk contact -All these parameters are take into account in Agilent ADS RF model -RF model can be BSIM or PSP -RF model include Process deviation, Temperature dependency, Mismatch and Process statistic Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 9 The 65nm CMOS Technology for mm-wave frequencies • Design Kit parametric cell and associated Agilent Ads RF model offers : Meta-Oxide-Metal (MOM) capacitance Metal-Insulator-Metal (MIM) capacitance Poly capacitances Complete inductor geometry offer: All models are good up to the resonance frequency Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 10 The 65nm CMOS Technology for mm-wave frequencies • MOSFET RF models are validate up to mm-wave frequencies and considerate good until the fT of the transistor • Passive models are good up to their self resonance • But the question is : How to consider an element ? size versus frequency ε =4 r 100000 Distributed Element [um] . dd[um] 10000 If 1000 d . ε r . freq > 0,1 then the element can be seen c as definitely lumped 100 If 10 Lumped Element d . ε r . freq < 0,01 then the element can be seen c as definitely distributed 1 0 20 40 60 80 100 Frequency Fréquence [GHz] [GHz] Simulation behavior of an element according to its dimension and the frequency Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 11 Custom passive components using Agilent Momentum • Example: Bond wire and bump pad modeling Virtuoso Layout Export GDS Import GDS in ADS layout Momentum simulation pads S-parameters results Pad equivalent model extraction bump Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 12 Custom passive components using Agilent Momentum • Example: Transformers in CMOS065 Vertical coupled transformer Horizontal coupled transformer Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 13 Custom passive components using Agilent Momentum • Example: Transmission Line in CMOS065 SOI Coplanar in CMOS d w dielectric H AP AP AP M6 M6 M6 M5 M5 E M4 M3 M4 M3 M2 M1 M2 M1 h Buried oxide HR Substrate Color code: - Momentum o Measurement Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 14 Outline • Introduction – Millimeter Wave Wireless Market – Technology Requirements • The 65nm CMOS Technology for mm-wave frequencies – Active components from Design Kit available in ADS – Passive components from Design Kit available in ADS – Custom passive components using Momentum • 60GHz Low Noise Amplifier design methodology in CMOS 65nm using ADS – Specifications – Topology and MOSFET choices – Design techniques using ADS tools • Conclusion Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 15 Specifications • Typical specification for 60GHz applications: – – – – – – – Center frequency: 60GHz S21 : >15dB S11,S22 : < -10dB S12 : < -20dB NF: <8dB IIP3: >-15dBm (RF spacing ~5MHz) Power consumption < 40mW MSG@60GHz ~8dB 3 stages amplifier Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 16 Topology choices • 4 common solutions @ mmW frequencies: Common Source (CS) Common Source Degenerated (CS D) out out in Cascode Degenerated (CAS D) Cascode (CAS ) out out in in in Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 17 Topology choices • 4 common solutions @ mmW frequencies: 9 8 7 NFmin [dB] 6 5 4 3 CS CAS CAS D CS_D 2 1 0 0 10 20 30 40 Γopt / 0-110GHz 60 70 80 90 100 110 120 30 28 3 .5 26 24 22 20 3 .0 2 .5 18 16 2 .0 K MSG & MAG [dB] 50 Frequency [GHz] 14 12 10 8 1 .5 1 .0 6 4 2 0 .5 0 0 10 20 30 40 50 60 70 80 F re q u e n c y [G H z ] 90 100 110 120 0 .0 0 10 20 30 40 50 60 70 80 90 100 110 120 F r e q u e n c y [G H z ] Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 18 MOSFET choices (1) 8 8 6 6 4 4 2 2 0 0 MSG & MAG [dB] @ 80GHz NFmin [dB] @ 80GHz • How to choose NMOS length, width, finger size and number of gate access ? Length Choose minimum Length to maximize Gain and minimize noise 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 0.22 0.24 0.26 NMOS Length [µm] Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 19 MOSFET choices (2) 9.5 18 9.0 16 8.5 14 8.0 12 7.5 10 7.0 8 6.5 6 6.0 4 20 30 40 50 60 70 Current [mA] MAG [dB] @ 80GHz • How to choose NMOS length, width, finger size and number of gate access ? Width : Choose maximum width with respect to current consumption specifications 80 NMOS Width [µm] Current density 150uA/um, Finger Width=1um Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 20 MOSFET choices (2) 4.0 18 3.5 16 3.0 14 2.5 12 2.0 10 1.5 8 1.0 0.5 6 0.0 4 20 30 40 50 60 70 Current [mA] NFmin [dB] @ 80GHz • How to choose NMOS length, width, finger size and number of gate access ? Width : Choose maximum width with respect to current consumption specifications 80 NMOS Width [µm] Current density 150uA/um, Finger Width=1um Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 21 MOSFET choices (2) • How to choose NMOS length, width, finger size and number of gate access ? 120 18 16 14 80 12 60 10 8 40 6 20 4 20 30 40 50 60 70 Current [mA] Rn @ 80GHz 100 Width : Choose maximum width with respect to current consumption specifications 80 NMOS Width [µm] Current density 150uA/um, Finger Width=1um Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 22 MOSFET choices (3) 8.5 6 8.0 5 1 gate access 2 gates access 7.5 4 7.0 3 0.5 1.0 1.5 2.0 2.5 3.0 NFmin [dB] @ 80GHz MSG [dB] @ 80GHz • How to choose NMOS length, width, finger size and number of gate access ? Finger size : Choose minimum size to maximize Gain and minimize noise Number of gate access: Choose 2 for the same reason Finger size [µm] Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 23 MOSFET choices (4) 9.0 6 7.5 5 6.0 4 4.5 3 3.0 2 1.5 1 0.0 0 50 100 150 200 250 300 350 400 450 500 550 600 650 700 NFmin [dB] @ 80GHz MSG [dB] @ 80GHz • How to choose the right biasing value ? Current Density [mA/mm] Minimize noise Maximize gain Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 24 MOSFET choices - synthesis Gain specification dictate the number of stage for a given MSG Each stages is optimize for noise (150uA/mm) or gain (300uA/mm) (see Friss expression : Ftotal = F0 + F0+1 − 1 + F0+ 2 − 1 + ... ) G0 G0 ⋅ G0+1 For a given power consumption, the width of each MOSFET is figured out. In case of no power specification, the width is chosen taking into the trade of between good “Rn” (for noise) and good gain (W↑, Cds↑ and Gaas ↓) Double gate access is selected preferentially and unit finger size is chosen as small as possible taking into account the current electromigration Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 25 Design techniques using ADS tools – mmW LNA • First stage design: Topology : cascode Biasing : 150uA/um Vgs=0.6V Overdrive voltage >150mV IIP3~ 0dBm (for CS) Choose M2 to reduce RonM2 (i.e. Vds2) and minimize capacitance to bulk (rule of thumb : WM2=1.5xWM1) Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 26 Design techniques using ADS tools – mmW LNA • First stage design: Want to win times ? Use ADS “optim” tool S parameter simulation Discrete value for TLines “genetic” algorithms in optim module Finally set your goals (ex: S21>6dB, S11<-10dB, K>1, etc) Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 27 Design techniques using ADS tools – mmW LNA • First stage design: “Optim” example Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 28 Design techniques using ADS tools – mmW LNA • First stage design: simulation results – Target S21 >8dB (freq 57GHz to 66GHz) – Target S11, S22 <-15dB (freq 57GHz to 66GHz) – Target NF <5 dB (freq 57GHz to 66GHz) Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 29 Design techniques using ADS tools – mmW LNA • First stage design: simulation results – Target S21 >8dB (freq 57GHz to 66GHz) – Target S11, S22 <-15dB (freq 57GHz to 66GHz) – Target NF <5 dB (freq 57GHz to 66GHz) Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 30 Design techniques using ADS tools – mmW LNA • Three stages LNA: S-Parameters results Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 31 Design techniques using ADS tools – mmW LNA • Three stages LNA: HB results Visual results : ICP1 = -21dBm IIP3 = -11dBm Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 32 Design techniques using ADS tools – mmW LNA • Three stages LNA: HB results (2nd method) Calculated results : ICP1 = -22dBm IIP3 = -13dBm Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 33 Outline • Introduction – Millimeter Wave Wireless Market – Technology Requirements • The 65nm CMOS Technology for mm-wave frequencies – Active components from Design Kit available in ADS – Passive components from Design Kit available in ADS – Custom passive components using Momentum • 60GHz Low Noise Amplifier design methodology in CMOS 65nm using ADS – Specifications – Topology and MOSFET choices – Design techniques using ADS tools • Conclusion Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 34 Conclusion • Today STMicroelectronics CMOS technology has demonstrated performances required for mm-wave applications • Agilent ADS offer the good platform to design at such high frequency : – Compatible with STMicroelectronics Design Kit – System to component frequency simulator – Allow the design of new specific components for mmW applications (TLines, transformers, etc..) with Momentum Contact : [email protected] Results and assertions contained in this document constitute a commitment of the author not by STMicroelectronics. Any unauthorized disclosure, use or dissemination, either whole or partial, is prohibited 35