MIXED SIGNAL SOI GATE ARRAYS HMX2000 FAMILY Features x x x x x x x x x x Fabricated on Honeywell’s RICMOSTM IV Silicon On Insulator (SOI) process - 0.8 Pm Process (Leff = .65 Pm) HMX2000 supports 5V operation TTL, CMOS, Cold Spare compatible I/O 3 or 4 layer metal interconnect Compatible with existing HX2000 digital gate arrays - Sea-Of-Gates flow around embedded cells - Memory, A/D, D/A and other cores available Up to 275,000 gates useable Typical gate toggle power 0.6 PW/MHz/gate Analog on SOI provides 10dB lower substrate noise than bulk CMOS at 1GHz, 25dB lower at 100 MHz NMOS Ft = 15 GHz CrSi resistor, 2500:/square r 20% 300 ppm/qC temperature coefficient x Linear Capacitors 100ppm/Volt, 0.5fF/Pm2 Vt~0.8V DMOS: NMOS AND PMOS > 20 Volts Breakdown Lateral Bipolar: ǃ>20 Inductors (Metal Spiral) Q~2-5, 2-5nH Body terminal fully oxide-isolated from substrate Ring Oscillator Speed ~ 150 psec/stage Total Dose Hardness > 1M Rad(Si) No Latchup - x x x x x x x x Future enhancements x 3.3V digital supply and I/O General Description The HMX2000 family of arrays incorporate Mixed Signal capability as an extension of the available HX2000 Gate Array family, fabricated on Honeywell’s RICMOSTM IV Silicon On Insulator (SOI) process. The SOI-IV process at Honeywell has performance advantages over bulk silicon CMOS in that 25% to 35% higher speeds can be obtained or up to 30% lower power. The SOI substrate can support a 6X improvement in static noise margins and significantly lower subthreshold leakage current. Each HMX2000 array design is founded on our proven SOI ASIC library of SSI and MSI logic elements, available core IP (intellectual property), integratable passives, and selectable I/O pads. This family is fully compatible with Honeywell’s range of high reliability screening, test and packaging options. Designers can choose from a wide variety of I/O types. Output buffer options include 8 drive strengths, CMOS/TTL levels, IEEE 1149.1 boundry scan, pullup/pull-down resistors, and tri-state capability. Input buffers can be selected for CMOS/TTL/Schmitt trigger levels, IEEE 1149.1 boundry scan and pull-up/pull-down resistors. Bi-directional buffers are also available. _________________________________________________________________________________________________________ Solid State Electronics Center x 12001 State Highway 55, Plymouth, MN 55441x (800) 323-8295 x http://www.ssec.honeywell.com HMX2000 ________________________________________________________________________ Building blocks 8-bit, 8-channel A/D converter 12-bit current-output DAC Laser-trimmed precision voltage reference General purpose opamp, bias generators PLL, 2 versions, 50 –180 MHz Misc. Amplifiers Comparators Analog Output Buffer SPICE models, Custom Cell Design Services SPECIFICATIONS HMX2000 Characteristics Maximum gate count and I/O Typical delay – 2 input NAND I/O interface levels Typical power consumption, PW/MHz/gate Operating temperature range Minimum Geometry Analog supply level NMOS/PMOS Vt matching Poly resistor characteristics P-well resistor characteristics Linear capacitor characteristics The HMX2000 family has a cold sparing feature to allow a chip level power down mode, in which the associated busses connected to the chip can remain active. This high impedance off-state buffer feature allows users to power down portions of their system for power savings. Honeywell’s VDSTM design kit and SOI libraries provide the necessary guidance to achieve first pass design success. The VDS design kit supports industry leading Electronic Design Automation tools including those offered by Mentor Graphics, Synopsys, and Cadence. Honeywell can perform design translations to the HMX2000 ASIC family from other Computer Aided Design platforms. Customers may use familiar CAD tools and libraries to map existing designs to Honeywell library components. Any analog tools capable of SPICE simulation can be used to design the analog part of the mixed mode 275,000 useable gates and 388 signal I/O 270 ps @ 5.0V TTL, CMOS, Schmitt trigger 0.6 @ 5.0V -55qC to +125qC 0.8 Pm Drawn/ 0.65 PmLeff 5.0V NMOS - V ~ 1.0 mV (large devices) PMOS - V ~ 1.5 mV (large devices) 250 ppm/qC, 250 PA/Pm RMS current density, 100:/square r 30% 2500 ppm/qC, 20 PA/Pm RMS current density, -2000 ppm/V, 2500:/square, r 35% -100 ppm/V, 0.5 fF/Pm2, 20 ppm/qC design. Honeywell will provide SOI-IV Mixed Signal Design Guidelines to assist users in the design of analog functions. The basic technology parameters such as capacitance, sheet resistance, maximum operating voltage and electromigration limits along with BSIM device models are documented in the SOI-IV Electrical Rules and are available to designers. Honeywell assigns a Customer Design Engineer to each ASIC program to provide technical assistance, telephone support, and to coordinate the design through mask release. A project manager is also assigned to communicate fab, test and package assembly status. The HMX2000 mixed mode ASIC family provides customers with an integration capability that can improve system performance while reducing power and provides system cost savings. To learn more about Honeywell’s variety of custom and semi-custom IC products, call us at 763-954-2888. Honeywell reserves the right to make changes to any products or technology herein to improve reliability, function or design. Honeywell does not assume any liability arising out of the application or use of any product or circuit described herein: neither does it convey any license under its patent rights nor the rights of others. 11/01 900300 01/03