Si8406DB Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. ID (A) 0.033 at VGS = 4.5 V 16e 0.037 at VGS = 2.5 V 16e 0.042 at VGS = 1.8 V 15 Qg (Typ.) 7.5 nC MICRO FOOT Bump Side View S • Load Switch • Battery Management • Boost Converter 1 3 D 6 XXX S 8406 S TrenchFET® Power MOSFET Ultra-small 1.5 mm x 1 mm Maximum Outline Ultra-thin 0.59 mm Maximum Height Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Backside View G 2 • • • • D D 4 5 G Device Marking: 8406 xxx = Date/Lot Traceability Code Ordering Information: Si8406DB-T2-E1 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C) TA = 25 °C 13.5 ID 7.8a, b 6.2a, b TA = 70 °C IDM Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 70 °C TA = 25 °C 11 IS 2.3a, b 13 8.4 PD 2.77a, b Package Reflow Conditionsc W 1.77a, b TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range A 30 TC = 25 °C Maximum Power Dissipation V 16e TC = 25 °C TC = 70 °C Unit - 55 to 150 IR/Convection 260 °C Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering. d. Case in defined as the top surface of the package. e. TC = 25 °C package limited. Document Number: 62530 S12-0978-Rev. A, 30-Apr-12 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8406DB Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain)c Steady State Symbol Typical Maximum RthJA 37 45 RthJC 7 9.5 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 85 °C/W. c. Case is defined as top surface of the package. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0, ID = 250 µA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistance Forward Transconductancea a RDS(on) gfs V 18 mV/°C -3 0.4 0.85 V ± 100 nA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 70 °C 10 VDS 5 V, VGS = 4.5 V 5 µA A VGS = 4.5 V, ID = 1 A 0.026 0.033 VGS = 2.5 V, ID = 1 A 0.028 0.037 VGS = 1.8 V, ID = 1 A 0.030 0.042 VDS = 10 V, ID = 1 A 20 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time www.vishay.com 2 830 VDS = 10 V, VGS = 0 V, f = 1 MHz pF 146 61 VDS = 10 V, VGS = 8 V, ID = 1 A 13 20 7.5 12 VDS = 10 V, VGS = 4.5 V, ID = 1 A 1.1 VGS = 0.1 V, f = 1 MHz 3.6 VDD = 10 V, RL = 10 ID 1 A, VGEN = 4.5 V, Rg = 1 18 40 30 60 tf 10 20 td(on) 5 10 0.8 td(on) tr td(off) tr td(off) nC 7 VDD = 10 V, RL = 10 ID 1 A, VGEN = 8 V, Rg = 1 tf For technical questions, contact: [email protected] 15 17 35 25 50 10 20 ns ns Document Number: 62530 S12-0978-Rev. A, 30-Apr-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8406DB Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions IS TC = 25 °C Min. Typ. Max. Unit Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 20 30 IS = 1 A, VGS = 0 IF = 1 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.7 1.2 V 15 30 ns 5 10 nC 8 7 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 62530 S12-0978-Rev. A, 30-Apr-12 For technical questions, contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8406DB Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 30 10 VGS = 5 V thru 2 V 25 8 ID - Drain Current (A) ID - Drain Current (A) VGS = 1.5 V 20 15 10 6 TC = 25 °C 4 TC = 125 °C 2 5 TC = - 55 °C VGS = 1 V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) 3.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1200 0.040 900 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.036 VGS = 1.8 V 0.032 VGS = 2.5 V 0.028 VGS = 4.5 V Ciss 600 300 Coss 0.024 Crss 0.020 0 0 5 10 15 20 25 30 0 8 12 16 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 20 1.6 ID = 1 A RDS(on) - On-Resistance (Normalized) 8 VGS - Gate-to-Source Voltage (V) 4 ID - Drain Current (A) VDS = 10 V 6 VDS = 5 V 4 VDS = 16 V 2 0 0 www.vishay.com 4 3 6 9 12 15 ID = 1 A VGS = 2.5 V, 1.8 V 1.4 1.2 VGS = 4.5 V 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature For technical questions, contact: [email protected] 150 Document Number: 62530 S12-0978-Rev. A, 30-Apr-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8406DB Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.08 100 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 1 A TJ = 150 °C 10 TJ = 25 °C 1 0.1 0.06 0.04 TJ = 125 °C 0.02 TJ = 25 °C 0.00 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 0 0.7 25 0.6 20 Power (W) VGS(th) (V) 30 0.5 ID = 250 μA 10 0.3 5 25 50 75 100 TJ - Temperature (°C) 125 4 5 15 0.4 0 3 On-Resistance vs. Gate-to-Source Voltage 0.8 - 25 2 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.2 - 50 1 0 0.001 150 Threshold Voltage 0.01 0.1 1 Pulse (s) 10 100 1000 Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* ID - Drain Current (A) 10 100 μs 1 ms 1 10 ms 100 ms,1 s 10 s DC 0.1 TA = 25 °C BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 62530 S12-0978-Rev. A, 30-Apr-12 For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8406DB Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 15 20 12 Package Limited Power Dissipation (W) ID - Drain Current (A) 16 12 8 9 6 3 4 0 0 0 25 50 75 100 125 150 25 50 75 100 TC - Ambient Temperature (°C) T C - Case Temperature (°C) Current Derating* Power Derating 125 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 62530 S12-0978-Rev. A, 30-Apr-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8406DB Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 P DM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W 0.02 Single Pulse 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 62530 S12-0978-Rev. A, 30-Apr-12 For technical questions, contact: [email protected] www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8406DB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 6-BUMP (0.5 mm PITCH) 6 x Ø 0.24 to 0.26 Note 3 Solder Mask ~ Ø 0.25 A1 e A2 1 A C B A 2 Bump Note 2 e e Recommended Land S S D S G e 8406 Mark on Backside of Die s XXX D D s 6xØb s e e s E Notes (unless otherwise specified): 1. All dimensions are in millimeters. 2. Six (6) solder bumps are lead (Pb)-free 95.5Sn, 3.8Ag, 0.7Cu with diameter 0.30 mm to 0.32 mm. 3. Backside surface is coated with a Ti/Ni/Ag layer. 4. Non-solder mask defined copper landing pad. 5. is location of pin 1. · Dim. A Millimetersa Inches Min. Nom. Max. Min. Nom. Max. 0.510 0.575 0.590 0.0201 0.0224 0.0232 A1 0.220 0.250 0.280 0.0087 0.0098 0.0110 A2 0.290 0.300 0.310 0.0114 0.0118 0.0122 b 0.300 0.310 0.320 0.0118 0.0122 0.0126 e 0.500 0.0197 s 0.230 0.250 0.270 0.0090 0.0098 0.0106 D 0.920 0.960 1.000 0.0362 0.0378 0.0394 E 1.420 1.460 1.500 0.0559 0.0575 0.0591 Note: a. Use millimeters as the primary measurement. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62530. www.vishay.com 8 For technical questions, contact: [email protected] Document Number: 62530 S12-0978-Rev. A, 30-Apr-12 This document is subject to change without notice. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: SI8406DB-T2-E1