V10150C-M3/4W

V10150C, VI10150C
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.63 at IF = 3 A
FEATURES
TMBS
®
• Trench MOS Schottky technology
TO-220AB
• Low forward voltage drop, low power losses
TO-262AA
• High efficiency operation
K
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
2
3
1
1
V10150C
2
3
VI10150C
PIN 1
PIN 2
PIN 1
PIN 2
PIN 3
CASE
PIN 3
K
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
PRIMARY CHARACTERISTICS
IF(AV)
2 x 5.0 A
VRRM
150 V
IFSM
60 A
VF at IF = 5 A
0.69 V
TJ max.
150 °C
Package
TO-220AB, TO-262AA
Diode variation
Common cathode
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Max. repetitive peak reverse voltage
VRRM
per diode
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Revision: 16-Aug-13
VI10150C
150
UNIT
V
10
per device
Max. average forward rectified current (fig. 1)
V10150C
IF(AV)
IFSM
A
5.0
60
A
dV/dt
10 000
V/μs
TJ, TSTG
- 55 to + 150
°C
Document Number: 89154
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V10150C, VI10150C
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 3 A
TA = 25 °C
IF = 5 A
Instantaneous forward voltage per diode
SYMBOL
VF (1)
IF = 3 A
TA = 125 °C
IF = 5 A
VR = 100 V
Reverse current per diode
MAX.
0.82
-
0.99
1.41
0.63
-
0.69
0.75
UNIT
V
TA = 25 °C
0.5
-
μA
TA = 125 °C
0.5
-
mA
IR (2)
TA = 25 °C
VR = 150 V
TYP.
-
100
μA
1.0
10
mA
V10150C
VI10150C
UNIT
TA = 125 °C
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance per diode
RJC
4.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
TO-220AB
V10150C-M3/4W
TO-262AA
VI10150C-M3/4W
TO-220AB
V10150CHM3/4W
TO-262AA
VI10150CHM3/4W
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1.87
4W
50/tube
Tube
1.45
4W
50/tube
Tube
1.87
4W
50/tube
Tube
1.45
4W
50/tube
Tube
(1)
(1)
Note
(1) AEC-Q101 qualified


RATINGS AND CHARACTERISTICS CURVES 
(TA = 25 °C unless otherwise noted)
5
Resistive or Inductive Load
D = 0.5
10
Average Power Loss (W)
Average Forward Rectified Current (A)
12
8
6
4
2
D = 0.8
D = 0.3
4
D = 0.2
3
D = 1.0
D = 0.1
2
T
1
Mounted on Specific Heatsink
D = tp/T
tp
4
5
0
0
0
25
50
75
100
125
150
175
0
1
2
3
6
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 16-Aug-13
Document Number: 89154
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V10150C, VI10150C
www.vishay.com
Vishay General Semiconductor
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
1000
100
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1.6
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
10
1
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
10
TA = 150 °C
TA = 125 °C
0.1
TA = 100 °C
0.01
0.001
TA = 25 °C
0.0001
0.00001
10
20
30
40
50
60
70
80
90
100
Junction to Case
1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 16-Aug-13
Document Number: 89154
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V10150C, VI10150C
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.148 (3.74)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
1
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.160 (4.06)
0.140 (3.56)
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.105 (2.67)
0.095 (2.41)
0.035 (0.90)
0.028 (0.70)
0.104 (2.65)
0.096 (2.45)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
TO-262AA
0.185 (4.70)
0.175 (4.44)
0.411 (10.45) MAX.
30° (TYP.)
(REF.)
0.250 (6.35) MIN.
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
K
0.950 (24.13)
0.920 (23.37)
1
PIN
2
0.510 (12.95)
0.470 (11.94)
0.350 (8.89)
0.330 (8.38)
3
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
Revision: 16-Aug-13
0.401 (10.19)
0.381 (9.68)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.022 (0.56)
0.014 (0.35)
0.205 (5.20)
0.195 (4.95)
Document Number: 89154
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000