SUD23N06-31-GE3

SUD23N06-31
Vishay Siliconix
N-Channel 60 V (D-S), MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) ()
ID (A)a
0.031 at VGS = 10 V
9.1
0.045 at VGS = 4.5 V
7.6
VDS (V)
60
Qg (Typ.)
6.5 nC
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
TO-252
• DC/DC Converters
D
G
Drain Connected to Tab
G
D
S
S
Top View
Ordering Information: SUD23N06-31-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
17.1
ID
9.1a
7.6a
IDM
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 70 °C
TA = 25 °C
20.8
IS
3.8a
IAS
20
EAS
mJ
20
31.25
20
PD
W
5.7a
3.6a
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
A
50
TC = 25 °C
Maximum Power Dissipation
V
21.4
TA = 70 °C
Pulsed Drain Current
Unit
°C
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Symbol
a
Maximum Junction-to-Case
Typical
Maximum
t  10 s
RthJA
18
22
Steady State
RthJC
3.2
4.0
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board, t  10 s.
Document Number: 68857
S11-0181-Rev. B, 07-Feb-11
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1
SUD23N06-31
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
60
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS/TJ
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
V
65
ID = 250 µA
mV/°C
- 6.3
VGS(th)
VDS = VGS, ID = 250 µA
3.0
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
1
VDS = 60 V, VGS = 0 V, TJ = 70 °C
20
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
VDS 5 V, VGS = 10 V
RDS(on)
Forward Transconductancea
gfs
1.0
50
µA
A
VGS = 10 V, ID = 15 A
0.025
0.031
VGS = 4.5 V, ID = 10 A
0.037
0.045
VDS = 15 V, ID = 15 A
20
VDS = 25 V, VGS = 0 V, f = 1 MHz
140
VDS = 30 V, VGS = 10 V, ID = 23 A
11
17
6.5
13

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
670
60
VDS = 30 V, VGS = 4.5 V, ID = 23 A
f = 1 MHz
1.6
3.2
18
30
250
400
35
55
tf
68
110
td(on)
8
15
td(on)
Rise Time
VDD = 30 V, RL = 1.3 
ID  23 A, VGEN = 4.5 V, Rg = 1 
tr
Turn-Off Delay Time
td(off)
Fall Time
Turn-On Delay Time
Rise Time
VDD = 30 V, RL = 1.3 
ID  23 A, VGEN = 10 V, Rg = 1 
tr
Turn-Off Delay Time
td(off)
Fall Time
3.0
nC
3.0
Rg
Turn-On Delay Time
pF
tf
15
25
30
45
25
40

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Currenta
Body Diode Voltage
TC = 25 °C
IS
20.8
ISM
50
VSD
IS = 15 A
1.0
1.5
A
V
Body Diode Reverse Recovery Time
trr
30
60
ns
Body Diode Reverse Recovery Charge
Qrr
35
70
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 15 A, dI/dt = 100 A/µs, TJ = 25 °C
20
10
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68857
S11-0181-Rev. B, 07-Feb-11
SUD23N06-31
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
50
VGS = 10 V thru 6 V
5V
8
I D - Drain Current (A)
I D - Drain Current (A)
40
30
20
4V
6
4
TC = 25 °C
2
10
TC = 125 °C
3V
TC = - 55 °C
0
0
0
2
4
6
8
0
10
1
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
5
0.10
32
25 °C
24
RDS(on) - On-Resistance ()
g fs - Transconductance (S)
TC = - 55 °C
125 °C
16
8
0.08
0.06
VGS = 4.5 V
0.04
VGS = 10 V
0.02
0.00
0
0
5
10
15
20
0
25
10
20
40
ID - Drain Current (A)
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
50
10
1000
VGS - Gate-to-Source Voltage (V)
ID = 23 A
800
C - Capacitance (pF)
30
Ciss
600
400
Coss
200
Crss
VDS = 15 V
6
VDS = 45 V
4
2
0
0
0
VDS = 30 V
8
10
20
30
40
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 68857
S11-0181-Rev. B, 07-Feb-11
50
60
0
2
4
6
8
10
12
Qg - Total Gate Charge (nC)
Gate Charge
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SUD23N06-31
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
2.1
ID = 15 A
VGS = 10 V
10
I S - Source Current (A)
(Normalized)
R DS(on) - On-Resistance
1.8
1.5
VGS = 4.5 V
1.2
0.9
TJ = 25 °C
1
0.1
TJ = - 50 °C
0.01
0.6
- 50
- 25
0
25
50
75
100
125
0.001
0.0
150
0.2
0.4
0.6
0.8
1.0
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
0.5
0.2
VGS(th) Variance (V)
0.06
TJ = 125 °C
0.04
0.02
0
1
2
3
4
5
6
7
8
- 0.1
ID = 1 mA
- 0.4
ID = 250 µA
TJ = 25 °C
- 0.7
- 1.0
- 50
0.00
9
10
- 25
0
25
50
75
100
125
150
TJ - Temperature (°C)
VGS - Gate-to-Source Voltage (V)
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
100
500
10 µs
Limited by RDS(on)*
400
100 µs
10
I D - Drain Current (A)
Power (W)
1.2
VSD - Source-to-Drain Voltage (V)
0.08
R DS(on) - On-Resistance (Ω)
TJ = 150 °C
300
200
1 ms
1
10 ms
100 ms, DC
0.1
TC = 25 °C
Single Pulse
100
0
0.001
0.01
0.1
1
Time (s)
Single Pulse Power, Junction-to-Ambient
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4
10
0.01
0.1
BVDSS Limited
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Single Pulse Power, Junction-to-Case
Document Number: 68857
S11-0181-Rev. B, 07-Feb-11
SUD23N06-31
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
25
I D - Drain Current (A)
20
15
10
5
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*, Junction-to-Case
3.0
40
2.5
30
Power (W)
Power (W)
2.0
20
1.5
1.0
10
0.5
0.0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68857
S11-0181-Rev. B, 07-Feb-11
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SUD23N06-31
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 50 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
10 -3
10 -2
4. Surface Mounted
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68857.
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Document Number: 68857
S11-0181-Rev. B, 07-Feb-11
Package Information
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Vishay Siliconix
TO-252AA Case Outline
E
MILLIMETERS
A
C2
e
b2
D1
e1
E1
L
gage plane height (0.5 mm)
L4
b
L5
H
D
L3
b3
C
A1
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1
-
0.127
-
0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
0.024
C
0.46
0.61
0.018
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
4.10
-
0.161
-
E
6.35
6.73
0.250
0.265
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28 BSC
e1
0.090 BSC
4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
1.01
1.52
0.040
0.060
ECN: T13-0359-Rev. O, 03-Jun-13
DWG: 5347
Notes
• Dimension L3 is for reference only.
• Xi’an, Mingxin, and GEM SH actual photo.
Revision: 03-Jun-13
Document Number: 71197
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72594
Revision: 21-Jan-08
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000