AOT254L/AOB254L 150V N-Channel MOSFET General Description Product Summary The AOT254L/AOB254L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 150V 32A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 46mΩ RDS(ON) (at VGS =4.5V) < 53mΩ 100% UIS Tested 100% Rg Tested TO220 Top View Bottom View Top View TO-263 D2PAK D Bottom View D D D D G G D S S AOT254L D G S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C C Avalanche Current Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev 0 : March. 2011 Steady-State Steady-State A A IAS 12 A EAS 7 mJ 125 W 62.5 2.1 RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s V 4.2 PDSM TA=70°C ±20 3.3 PD TC=100°C Units V 70 IDSM TA=70°C Maximum 150 22.5 IDM TA=25°C Continuous Drain Current S S AOB254L 32 ID TC=100°C G -55 to 175 Typ 12 48 0.7 www.aosmd.com °C Max 15 60 1.2 Units °C/W °C/W °C/W Page 1 of 6 AOT254L/AOB254L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 150 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.7 ID(ON) On state drain current VGS=10V, VDS=5V 70 TJ=55°C nA 2.7 V 37 46 74 90 VGS=4.5V, ID=20A 40 53 TJ=125°C A gFS Forward Transconductance VDS=5V, ID=20A 55 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 ±100 Static Drain-Source On-Resistance Output Capacitance Units 2.2 VGS=10V, ID=20A Coss Max V VDS=150V, VGS=0V IDSS RDS(ON) Typ mΩ mΩ S 1 V 46 A 2150 pF VGS=0V, VDS=75V, f=1MHz 110 pF 4 pF VGS=0V, VDS=0V, f=1MHz 2.3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 27 40 nC Qg(4.5V) Total Gate Charge 12 17 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=75V, ID=20A 7 nC 3 nC 9 ns VGS=10V, VDS=75V, RL=3.75Ω, RGEN=3Ω 10 ns 29 ns tf Turn-Off Fall Time 4 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 51 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 434 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : March. 2012 www.aosmd.com Page 2 of 6 AOT254L/AOB254L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 30 10V VDS=5V 6V 50 25 5V 4.5V 40 20 ID(A) ID (A) 4V 30 15 125°C 10 20 25°C VGS=3.5V 10 5 0 0 0 1 2 3 4 0 5 60 2 3 4 5 6 Normalized On-Resistance 2.8 VGS=4.5V 50 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 40 30 VGS=10V 20 2.4 VGS=10V ID=20A 2 17 5 2 VGS=4.5V 10 1.6 ID=20A 1.2 0.8 10 0 5 10 15 20 25 0 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 100 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 1.0E+02 ID=20A 1.0E+01 40 125°C 1.0E+00 125°C 60 IS (A) RDS(ON) (mΩ Ω) 80 1.0E-01 1.0E-02 25°C 1.0E-03 40 25°C 1.0E-04 20 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0 : March. 2012 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOT254L/AOB254L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2400 VDS=75V ID=20A 2000 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 1600 1200 800 Coss 400 0 Crss 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 30 0 25 50 75 100 125 VDS (Volts) Figure 8: Capacitance Characteristics 1000 100.0 TJ(Max)=175°C TC=25°C 10µs RDS(ON) limited 800 10µs 100µs Power (W) 10.0 ID (Amps) 150 1ms 10ms 1.0 DC TJ(Max)=175°C TC=25°C 0.1 17 5 2 10 600 400 200 0.0 0 0.01 0.1 1 10 VDS (Volts) 100 1000 0.0001 0.001 0.01 0.1 1 10 0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 40 RθJC=1.2°C/W 1 PD 0.1 Ton T Single Pulse 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0 : March. 2012 www.aosmd.com Page 4 of 6 AOT254L/AOB254L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 140 TA=25°C 120 TA=100°C Power Dissipation (W) IAR (A) Peak Avalanche Current 100 TA=150°C 10 TA=125°C 100 80 60 40 20 1 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 175 10000 40 Power (W) Current rating ID(A) TA=25°C 1000 30 20 17 5 2 10 100 10 10 1 0 1E-05 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F) 0.001 0.1 10 1000 0 18 175 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 Ton Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 T 1000 10000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0 : March. 2012 www.aosmd.com Page 5 of 6 AOT254L/AOB254L Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0 : March. 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6