AOSMD AOWF2606

AOWF2606
60V N-Channel MOSFET
General Description
Product Summary
The AOWF2606 uses Trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of RDS(ON), Ciss and Coss. This device is
ideal for boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
VDS
ID (at VGS=10V)
60V
51A
RDS(ON) (at VGS=10V)
< 6.5mΩ
100% UIS Tested
100% Rg Tested
TO-262F
Top View
D
Bottom View
G
S
G
D
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TC=25°C
Pulsed Drain Current C
Continuous Drain
Current
V
A
260
13
IDSM
TA=70°C
±20
36.5
IDM
TA=25°C
Units
V
51
ID
TC=100°C
Maximum
60
A
10
Avalanche Current C
IAS
60
A
Avalanche energy L=0.1mH C
TC=25°C
EAS
180
mJ
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 1: Mar. 2012
2.1
Steady-State
Steady-State
RθJA
RθJC
W
1.3
TJ, TSTG
Symbol
t ≤ 10s
W
16.7
PDSM
TA=70°C
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
33.3
PD
TC=100°C
-55 to 175
Typ
11
47
3.7
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°C
Max
15
60
4.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AOWF2606
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Min
Conditions
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
Typ
V
VDS=60V, VGS=0V
1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
2.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
260
TJ=55°C
5
VGS=10V, ID=20A
nA
3
3.5
V
5.4
6.5
8.5
10.5
A
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VDS=5V, ID=20A
75
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
mΩ
S
1
V
35
A
4050
VGS=0V, VDS=30V, f=1MHz
µA
±100
RDS(ON)
Crss
Units
60
IDSS
Coss
Max
pF
345
pF
16.8
pF
0.65
1.0
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
53
75
nC
Qg(4.5V) Total Gate Charge
22
31
nC
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=30V, ID=20A
0.3
Qgs
Gate Source Charge
17
nC
Qgd
Gate Drain Charge
5
nC
tD(on)
Turn-On DelayTime
18
ns
20
ns
33
ns
4
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
26
ns
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
125
nC
VGS=10V, VDS=30V, RL=1.5Ω,
RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: Mar. 2012
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Page 2 of 6
AOWF2606
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
10V
VDS=5V
6V
100
80
5V
80
ID(A)
ID (A)
60
60
40
125°C
40
4.5V
20
20
25°C
VGS=4V
0
0
0
1
2
3
4
2
5
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
6
2
Normalized On-Resistance
10
8
RDS(ON) (mΩ
Ω)
3
6
4
VGS=10V
2
1.8
VGS=10V
ID=20A
1.6
17
5
2
10
1.4
1.2
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
14
1.0E+02
ID=20A
1.0E+01
12
IS (A)
RDS(ON) (mΩ
Ω)
40
1.0E+00
125°C
10
8
6
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
4
25°C
1.0E-04
1.0E-05
2
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: Mar. 2012
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOWF2606
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5000
10
VDS=30V
ID=20A
Ciss
4000
Capacitance (pF)
VGS (Volts)
8
6
4
3000
2000
Coss
2
1000
0
0
Crss
0
10
20
30
40
50
0
60
1000.0
20
30
40
50
60
1000
10µs
10µs
100µs
RDS(ON)
limited
10.0
1ms
10ms
1.0
TJ(Max)=175°C
TC=25°C
TJ(Max)=175°C
TC=25°C
800
Power (W)
ID (Amps)
100.0
10
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
DC
0.1
17
5
2
10
600
400
200
0.0
0
0.01
0.1
1
10
VDS (Volts)
100
1000
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
0.0001 0.001 0.01
0.1
1
10
0100
1000
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=4.5°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-06
Rev 1: Mar. 2012
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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100
1000
Page 4 of 6
AOWF2606
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
TA=25°C
TA=100°C
100
40
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=150°C
30
20
10
TA=125°C
10
0
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
175
1000
60
TA=25°C
100
40
Power (W)
Current rating ID(A)
50
30
20
17
5
2
10
10
10
1
0
0
25
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
50
75
175
1
100
0
10000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=60°C/W
1
0.01
40
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1: Mar. 2012
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Page 5 of 6
AOWF2606
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 1: Mar. 2012
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6