AOWF2606 60V N-Channel MOSFET General Description Product Summary The AOWF2606 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) 60V 51A RDS(ON) (at VGS=10V) < 6.5mΩ 100% UIS Tested 100% Rg Tested TO-262F Top View D Bottom View G S G D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C Pulsed Drain Current C Continuous Drain Current V A 260 13 IDSM TA=70°C ±20 36.5 IDM TA=25°C Units V 51 ID TC=100°C Maximum 60 A 10 Avalanche Current C IAS 60 A Avalanche energy L=0.1mH C TC=25°C EAS 180 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 1: Mar. 2012 2.1 Steady-State Steady-State RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s W 16.7 PDSM TA=70°C Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case 33.3 PD TC=100°C -55 to 175 Typ 11 47 3.7 www.aosmd.com °C Max 15 60 4.5 Units °C/W °C/W °C/W Page 1 of 6 AOWF2606 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Min Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V Typ V VDS=60V, VGS=0V 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 2.5 ID(ON) On state drain current VGS=10V, VDS=5V 260 TJ=55°C 5 VGS=10V, ID=20A nA 3 3.5 V 5.4 6.5 8.5 10.5 A Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=20A 75 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Reverse Transfer Capacitance Rg Gate resistance mΩ S 1 V 35 A 4050 VGS=0V, VDS=30V, f=1MHz µA ±100 RDS(ON) Crss Units 60 IDSS Coss Max pF 345 pF 16.8 pF 0.65 1.0 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 53 75 nC Qg(4.5V) Total Gate Charge 22 31 nC VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, ID=20A 0.3 Qgs Gate Source Charge 17 nC Qgd Gate Drain Charge 5 nC tD(on) Turn-On DelayTime 18 ns 20 ns 33 ns 4 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 26 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 125 nC VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: Mar. 2012 www.aosmd.com Page 2 of 6 AOWF2606 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 10V VDS=5V 6V 100 80 5V 80 ID(A) ID (A) 60 60 40 125°C 40 4.5V 20 20 25°C VGS=4V 0 0 0 1 2 3 4 2 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 6 2 Normalized On-Resistance 10 8 RDS(ON) (mΩ Ω) 3 6 4 VGS=10V 2 1.8 VGS=10V ID=20A 1.6 17 5 2 10 1.4 1.2 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 14 1.0E+02 ID=20A 1.0E+01 12 IS (A) RDS(ON) (mΩ Ω) 40 1.0E+00 125°C 10 8 6 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 4 25°C 1.0E-04 1.0E-05 2 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 1: Mar. 2012 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOWF2606 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5000 10 VDS=30V ID=20A Ciss 4000 Capacitance (pF) VGS (Volts) 8 6 4 3000 2000 Coss 2 1000 0 0 Crss 0 10 20 30 40 50 0 60 1000.0 20 30 40 50 60 1000 10µs 10µs 100µs RDS(ON) limited 10.0 1ms 10ms 1.0 TJ(Max)=175°C TC=25°C TJ(Max)=175°C TC=25°C 800 Power (W) ID (Amps) 100.0 10 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics DC 0.1 17 5 2 10 600 400 200 0.0 0 0.01 0.1 1 10 VDS (Volts) 100 1000 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.0001 0.001 0.01 0.1 1 10 0100 1000 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=4.5°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-06 Rev 1: Mar. 2012 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) www.aosmd.com 100 1000 Page 4 of 6 AOWF2606 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 TA=25°C TA=100°C 100 40 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=150°C 30 20 10 TA=125°C 10 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 175 1000 60 TA=25°C 100 40 Power (W) Current rating ID(A) 50 30 20 17 5 2 10 10 10 1 0 0 25 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F) Zθ JA Normalized Transient Thermal Resistance 10 50 75 175 1 100 0 10000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=60°C/W 1 0.01 40 0.1 PD 0.01 Single Pulse Ton T 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 1: Mar. 2012 www.aosmd.com Page 5 of 6 AOWF2606 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 1: Mar. 2012 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6