AOT2500L/AOB2500L

AOT2500L/AOB2500L
150V N-Channel MOSFET
General Description
Product Summary
The AOT2500L/AOB2500L uses Trench MOSFET
VDS
technology that is uniquely optimized to provide the most
ID (at VGS=10V)
150V
152A
efficient high frequency switching performance. Both
RDS(ON) (at VGS=10V)
< 6.5mΩ (< 6.2mΩ∗)
conduction and switching power losses are minimized
RDS(ON) (at VGS=6V)
< 7.6mΩ (<7.3mΩ∗)
due to an extremely low combination of RDS(ON), Ciss and
Coss. This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
100% UIS Tested
100% Rg Tested
TO-263
D2PAK
TO220
Top View
Bottom View
D
Top View
Bottom View
D
D
D
D
G
G
D
S
S
AOT2500L
D
G
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
C
Maximum
150
Units
V
±20
V
A
440
11.5
IDSM
TA=70°C
S
107
IDM
TA=25°C
S
G
152
ID
TC=100°C
S
AOB2500L
A
9.0
Avalanche Current C
IAS
65
A
Avalanche energy L=0.3mH C
TC=25°C
EAS
634
mJ
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
TA=25°C
2.1
Steady-State
Steady-State
RθJA
RθJC
W
1.3
TJ, TSTG
Symbol
t ≤ 10s
W
187.5
PDSM
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
375
PD
-55 to 175
Typ
12
48
0.26
°C
Max
15
60
0.4
Units
°C/W
°C/W
°C/W
* Surface mount package TO263
Rev.1. 0: July 2013
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Page 1 of 6
AOT2500L/AOB2500L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Conditions
Min
ID=250µA, VGS=0V
150
Zero Gate Voltage Drain Current
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS，ID=250µA
2.3
5.9
7.6
mΩ
VGS=10V, ID=20A
TO263
5.1
6.2
mΩ
VGS=6V, ID=20A
TO263
5.6
7.3
mΩ
1
V
152
A
VDS=5V, ID=20A
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
TJ=125°C
70
0.66
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Rg
Gate resistance
VGS=0V, VDS=75V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=75V, ID=20A
VGS=10V, VDS=75V, RL=3.75Ω,
RGEN=3Ω
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
1
mΩ
S
6460
pF
586
pF
22
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Qgs
V
6.5
Forward Transconductance
Output Capacitance
nA
3.5
12.3
Diode Forward Voltage
Reverse Transfer Capacitance
±100
5.4
gFS
Coss
2.8
10.2
VSD
Crss
µA
5
VGS=10V, ID=20A
TO220
VGS=6V, ID=20A
TO220
Static Drain-Source On-Resistance
Units
1
TJ=55°C
IGSS
Max
V
VDS=150V, VGS=0V
VGS(th)
RDS(ON)
Typ
pF
2.1
3.2
97
136
Ω
nC
22.5
nC
17
nC
18.5
ns
20
ns
67.5
ns
14
ns
90
ns
nC
1090
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1. 0: July 2013
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Page 2 of 6
AOT2500L/AOB2500L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
5V
80
VDS=5V
80
6V
60
60
ID(A)
ID (A)
4.5V
40
40
20
125°C
20
VGS=4V
25°C
0
0
0
1
2
3
4
2
5
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
6
2.6
Normalized On-Resistance
8
VGS=6V
RDS(ON) (mΩ
Ω)
3
6
VGS=10V
4
2.4
2.2
VGS=10V
ID=20A
2
17
5
2
VGS=6V
10
I =20A
1.8
1.6
1.4
1.2
D
1
0.8
2
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
15
100 125 150 0
175 200
Temperature (°C) 18
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
25
50
75
1.0E+02
ID=20A
1.0E+01
40
12
IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
125°C
9
1.0E-01
125°C
1.0E-02
6
1.0E-03
25°C
3
25°C
1.0E-04
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1. 0: July 2013
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOT2500L/AOB2500L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
10000
VDS=75V
ID=20A
8000
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
6000
4000
Coss
2000
Crss
0
0
0
20
40
60
80
Qg (nC)
Figure 7: Gate-Charge Characteristics
100
0
150
1000
1000.0
10µs
10µs
100µs
RDS(ON)
limited
1ms
10ms
DC
10.0
1.0
TJ(Max)=175°C
TC=25°C
0.1
TJ(Max)=175°C
TC=25°C
800
Power (W)
100.0
ID (Amps)
25
50
75
100
125
VDS (Volts)
Figure 8: Capacitance Characteristics
17
5
2
10
600
400
200
0.0
0
0.01
0.1
1
10
VDS (Volts)
100
1000
0.0001
0.001
0.01
0.1
0
1
18
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
VGS > or equal to 6V
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
40
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=0.4°C/W
1
PD
0.1
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1. 0: July 2013
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Page 4 of 6
AOT2500L/AOB2500L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
400
350
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=25°C
TA=100°C
100
TA=150°C
TA=125°C
300
250
200
150
100
50
10
0
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
175
1000
200
150
100
Power (W)
Current rating ID(A)
TA=25°C
100
17
5
2
10
10
50
0
0
1
0
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note F)
18100
0.1
1
10
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
175
0.001
0.01
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
40
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1. 0: July 2013
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Page 5 of 6
AOT2500L/AOB2500L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1. 0: July 2013
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6