Datasheet

AON6946
30V Dual Asymmetric N-Channel AlphaMOS
General Description
Product Summary
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5V VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
VDS
Q1
30V
Q2
30V
ID (at VGS=10V)
16A
18A
RDS(ON) (at VGS=10V)
<11.6mΩ
<7.8mΩ
RDS(ON) (at VGS=4.5V)
<17mΩ
<11.8mΩ
100% UIS Tested
100% Rg Tested
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
DFN5X6B
Top View
Bottom View
PIN1
Top View
Bottom View
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
ID
TC=100°C
Pulsed Drain Current C
Avalanche Current
Units
V
±20
±20
V
16
18
12
14
64
72
14
18G
11.5
14
IDM
TA=25°C
Continuous Drain
Current
Max Q2
IDSM
TA=70°C
C
30
A
A
IAS
19
25
A
Avalanche Energy L=0.05mH C
EAS
9
16
mJ
VDS Spike
VSPIKE
V
100ns
TC=25°C
Power Dissipation B
PD
TC=100°C
TA=25°C
Power Dissipation
A
PDSM
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1.0: September 2013
Steady-State
Steady-State
36
13
2.9
5.2
3.5
3.9
2.3
2.5
TJ, TSTG
Symbol
t ≤ 10s
36
7.3
RθJA
RθJC
-55 to 150
Typ Q1
29
55
13.8
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Typ Q2
26
50
7.7
Max Q1
35
66
17
W
W
°C
Max Q2
32
60
9.5
Units
°C/W
°C/W
°C/W
Page 1 of 10
AON6946
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
5
1.2
VGS=10V, ID=13A
TJ=125°C
VGS=4.5V, ID=10A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Qg(4.5V)
Total Gate Charge
Qgs
Gate Source Charge
Qgd
VGS=10V, VDS=15V, ID=13A
0.9
Units
V
1
TJ=55°C
VDS=5V, ID=13A
Max
30
VDS=30V, VGS=0V
IDSS
Coss
Typ
1.8
±100
nA
2.2
V
9.6
11.6
13.4
16.2
13.6
17
50
0.7
µA
mΩ
mΩ
S
1
V
9
A
485
pF
235
pF
32
pF
1.8
2.7
Ω
8
15
nC
3.9
8
nC
1.1
nC
Gate Drain Charge
2.1
nC
tD(on)
Turn-On DelayTime
3.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
2.8
ns
16.3
ns
tf
Turn-Off Fall Time
3
ns
trr
Body Diode Reverse Recovery Time
Qrr
IF=13A, dI/dt=500A/µs
9.9
Body Diode Reverse Recovery Charge IF=13A, dI/dt=500A/µs
12.9
ns
nC
VGS=10V, VDS=15V, RL=1.2Ω,
RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: September 2013
www.aosmd.com
Page 2 of 10
AON6946
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
10V
4.5V
VDS=5V
4V
6V
50
50
40
3.5V
ID(A)
ID (A)
40
30
30
125°C
20
20
VGS=3V
10
25°C
10
0
0
0
1
2
3
4
0
5
20
2
3
4
5
6
Normalized On-Resistance
1.6
VGS=4.5V
15
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
10
VGS=10V
5
VGS=10V
ID=13A
1.4
1.2
VGS=4.5V
ID=10A
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
25
1.0E+02
ID=13A
ID=11.5A
1.0E+01
20
1.0E+00
15
IS (A)
RDS(ON) (mΩ
Ω)
125°C
125°C
10
125°C
1.0E-01
1.0E-02
1.0E-03
25°C
5
25°C
1.0E-04
25°C
1.0E-05
0
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: September 2013
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 10
AON6946
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
800
VDS=15V
ID=13A
8
Ciss
Capacitance (pF)
VGS (Volts)
600
6
4
400
Coss
200
2
Crss
0
0
0
2
4
6
8
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
0
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
200
1000.0
TJ(Max)=150°C
TC=25°C
160
100.0
10µs
RDS(ON)
limited
10.0
100us
1ms
1.0
120
80
100ms
TJ(Max)=150°C
TC=25°C
0.1
Power (W)
ID (Amps)
5
DC
40
0.0
0
0.01
0.1
1
10
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
100
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=17°C/W
1
0.1
PD
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: September 2013
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Page 4 of 10
AON6946
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
8
Current rating ID(A)
Power Dissipation (W)
10
6
4
15
10
2
0
5
0
0
25
50
75
100
125
TCASE (°C)
Figure 12: Power De-rating (Note F)
150
0
25
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=66°C/W
40
0.1
PD
0.01
Ton
Single Pulse
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: September 2013
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Page 5 of 10
AON6946
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
5
1.2
VGS=10V, ID=15A
TJ=125°C
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Qg(4.5V)
Total Gate Charge
Qgs
Gate Source Charge
Qgd
tD(on)
VGS=10V, VDS=15V, ID=15A
0.6
nA
2.2
V
7.8
10.6
11.8
mΩ
1
V
15
A
0.7
IS=1A,VGS=0V
±100
6.5
100
Forward Transconductance
Diode Forward Voltage
µA
8.8
9.4
VSD
Output Capacitance
1.8
VGS=4.5V, ID=10A
gFS
Units
V
1
TJ=55°C
VDS=5V, ID=15A
Max
30
VDS=30V, VGS=0V
IDSS
Coss
Typ
mΩ
S
807
pF
314
pF
40
pF
1.3
2
Ω
12.9
20
nC
6
12
nC
2.1
nC
Gate Drain Charge
3
nC
Turn-On DelayTime
4.8
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=15A, dI/dt=500A/µs
VGS=10V, VDS=15V, RL=1Ω,
RGEN=3Ω
IF=15A, dI/dt=500A/µs
3.3
ns
18.8
ns
3.3
ns
11.3
ns
nC
15
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: September 2013
www.aosmd.com
Page 6 of 10
AON6946
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
10V
4.5V
VDS=5V
4V
50
50
40
ID(A)
ID (A)
40
30
30
125°C
20
20
10
25°C
10
VGS=3V
0
0
0
1
2
3
4
5
0
15
2
3
4
5
6
Normalized On-Resistance
1.6
12
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
9
6
VGS=10V
3
0
VGS=10V
ID=15A
1.4
1.2
VGS=4.5V
ID=10A
1
0.8
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+02
18
ID=15A
1.0E+01
15
125°C
IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
12
9
125°C
1.0E-01
25°C
1.0E-02
6
1.0E-03
25°C
3
1.0E-04
0
1.0E-05
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: September 2013
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 7 of 10
AON6946
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1000
VDS=15V
ID=15A
Ciss
800
Capacitance (pF)
VGS (Volts)
8
6
4
200
0
0
5
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
Coss
400
2
0
15
Crss
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
500
1000.0
TJ(Max)=150°C
TC=25°C
400
100.0
10µs
RDS(ON)
limited
10.0
100µs
1ms
10ms
1.0
TJ(Max)=150°C
TC=25°C
0.1
Power (W)
ID (Amps)
600
300
200
DC
100
0.0
0
0.01
0.1
1
10
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=9.5°C/W
1
PD
0.1
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: September 2013
www.aosmd.com
Page 8 of 10
AON6946
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
Current rating ID(A)
Power Dissipation (W)
20
10
5
15
10
5
0
0
0
25
50
75
100
125
TCASE (°C)
Figure 12: Power De-rating (Note F)
150
0
25
50
75
100
125
TCASE (°C)
Figure 13: Current De-rating (Note F)
150
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
Zθ JA Normalized Transient
Thermal Resistance
10
1
0.001
0.1
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1000
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: September 2013
www.aosmd.com
Page 9 of 10
AON6946
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev.1.0: September 2013
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 10 of 10