AON6934A

AON6934A
30V Dual Asymmetric N-Channel AlphaMOS
General Description
Product Summary
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Q1
30V
Q2
30V
ID (at VGS=10V)
28A
36A
RDS(ON) (at VGS=10V)
<5.2mΩ
<2.9mΩ
RDS(ON) (at VGS = 4.5V)
<9.5mΩ
<4.4mΩ
VDS
100% UIS Tested
Applications
100% Rg Tested
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
DFN5X6
Top View
Bottom View
PIN1
Top View
PIN1
Bottom
View
Bottom
View
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
CurrentG
ID
TC=100°C
Pulsed Drain Current C
TA=25°C
Continuous Drain
Current
Avalanche Current
IDM
Max Q2
Units
V
±20
±20
V
28
36
22
28
112
144
22
30
17
24
IDSM
TA=70°C
C
30
A
A
IAS
32*
46*
Avalanche Energy L=0.05mH C
EAS
26*
53*
A
mJ
VDS Spike
VSPIKE
36
36
V
31
33
12
13
3.6
4.3
2.3
2.7
100ns
TC=25°C
Power Dissipation B
PD
TC=100°C
TA=25°C
Power Dissipation
A
PDSM
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJC
-55 to 150
Typ Q1
29
56
3.3
Typ Q2
24
50
3
Max Q1 Max Q2
35
29
67
60
4
3.8
W
W
°C
Units
°C/W
°C/W
°C/W
*Q1 L=0.1mH, IAS=20A, EAS=20mJ, Starting TJ=25°C.
*Q2 L=0.1mH, IAS=33A, EAS=54mJ, Starting TJ=25°C.
Rev 2.0 : April 2014
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Page 1 of 10
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
5
1.4
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous CurrentG
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
VGS=10V, VDS=15V, ID=20A
0.7
Units
V
1
TJ=55°C
IGSS
Max
30
VDS=30V, VGS=0V
VGS(th)
Coss
Typ
1.8
µA
100
nA
2.2
V
4.3
5.2
6
7.2
7
9.5
mΩ
1
V
28
A
91
0.7
mΩ
S
1037
pF
441
pF
61
pF
1.5
2.3
Ω
15.5
22
nC
6.8
10
nC
3.0
nC
Gate Drain Charge
3.6
nC
Qgs
Gate Source Charge
3.0
nC
3.6
nC
5.5
ns
3.3
ns
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=4.5V, VDS=15V, ID=20A
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
18
ns
4.3
ns
ns
nC
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
12.7
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
17.2
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2.0 : April 2014
www.aosmd.com
Page 2 of 10
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
VDS=5V
4.5V
80
80
7V
5V
4V
60
ID(A)
ID (A)
60
125°C
40
40
20
20
25°C
VGS=3.0V
0
0
0
1
2
3
4
0
5
2
3
4
5
6
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
1.6
Normalized On-Resistance
10
VGS=4.5V
8
RDS(ON) (mΩ)
1
6
4
VGS=10V
2
0
VGS=10V
ID=20A
1.4
1.2
VGS=4.5V
ID=20A
1
0.8
0
5
10
15
20
25
30
0
25
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
15
1.0E+02
ID=20A
ID=11.5A
1.0E+01
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ)
10
125°C
125°C
1.0E-01
1.0E-02
25°C
5
1.0E-03
25°C
1.0E-04
25°C
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 2.0 : April 2014
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 10
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1400
VDS=15V
ID=20A
1200
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
1000
800
600
Coss
400
2
Crss
200
0
0
0
5
10
15
20
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
200
1000.0
TJ(Max)=150°C
TC=25°C
160
100.0
RDS(ON)
limited
10µs
10.0
100us
1.0
1ms
100ms
DC
Power (W)
ID (Amps)
5
120
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
80
40
0.1
1
10
0
0.0001
100
VDS (Volts)
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=4°C/W
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
T
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 2.0 : April 2014
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Page 4 of 10
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
Current rating ID(A)
Power Dissipation (W)
40
30
20
10
30
20
10
0
0
0
25
50
75
100
125
150
0
25
TCASE (°C)
Figure 12: Power De-rating (Note F)
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
ZθJA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=67°C/W
40
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 2.0 : April 2014
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Page 5 of 10
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=10mA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
5
1.4
VGS=10V, ID=20A
VGS=4.5V, ID=20A
3.5
4.4
mΩ
105
0.7
1
V
36
A
Forward Transconductance
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous CurrentG
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Qgs
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
V
2.9
Diode Forward Voltage
Rg
nA
2.2
4.4
VSD
Reverse Transfer Capacitance
100
2.4
gFS
Crss
1.8
µA
3.6
TJ=125°C
VDS=5V, ID=20A
Output Capacitance
Units
V
1
TJ=55°C
IGSS
Max
30
VDS=30V, VGS=0V
VGS(th)
Coss
Typ
VGS=10V, VDS=15V, ID=20A
0.9
mΩ
S
2010
pF
898
pF
124
pF
1.8
2.7
Ω
36
49
nC
17
23
nC
6
nC
Gate Drain Charge
8
nC
Gate Source Charge
6
nC
VGS=4.5V, VDS=15V, ID=20A
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
8
nC
7.5
ns
4.0
ns
37.0
ns
7.5
ns
14
ns
nC
20.3
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2.0 : April 2014
www.aosmd.com
Page 6 of 10
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
50
VDS=5V
4.5V
80
40
3.5V
10V
60
125°C
ID(A)
ID (A)
30
3V
40
20
25°C
10
20
VGS=2.5V
0
0
0
1
2
3
4
0
5
6
3
4
5
6
Normalized On-Resistance
2
5
VGS=4.5V
4
3
2
VGS=10V
1
0
1.8
VGS=10V
ID=20A
1.6
1.4
1.2
VGS=4.5V
ID=20A
1
0.8
0
5
10
15
20
25
30
0
25
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+02
8
ID=20A
1.0E+01
6
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ)
2
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
RDS(ON) (mΩ)
1
4
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
2
25°C
1.0E-04
0
2
4
6
8
10
1.0E-05
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 2.0 : April 2014
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 7 of 10
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3000
VDS=15V
ID=20A
2500
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
2
2000
1500
Coss
1000
Crss
500
0
0
0
10
20
30
40
0
5
1000.0
500
100.0
400
RDS(ON)
10µs
100µs
10.0
DC
1ms
10ms
1.0
0.1
TJ(Max)=150°C
TC=25°C
0.0
0.01
15
20
25
30
TJ(Max)=150°C
TC=25°C
300
200
100
0.1
1
10
100
0
0.0001
VDS (Volts)
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
ZθJC Normalized Transient
Thermal Resistance
10
VDS (Volts)
Figure 8: Capacitance Characteristics
Power (W)
ID (Amps)
Qg (nC)
Figure 7: Gate-Charge Characteristics
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3.8°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 2.0 : April 2014
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Page 8 of 10
40
40
30
30
Current rating ID(A)
Power Dissipation (W)
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
10
0
0
25
50
75
100
125
20
10
0
150
0
TCASE (°C)
Figure 12: Power De-rating (Note F)
25
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
ZθJA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 2.0 : April 2014
www.aosmd.com
Page 9 of 10
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev 2.0 : April 2014
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 10 of 10