AON7934

AON7934
30V Dual Asymmetric N-Channel AlphaMOS
General Description
Product Summary
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
VDS
Q1
30V
Q2
30V
ID (at VGS=10V)
16A
18A
RDS(ON) (at VGS=10V)
<10.2mΩ
<7.7mΩ
RDS(ON) (at VGS = 4.5V)
<15.8mΩ
<11.6mΩ
100% UIS Tested
Application
100% Rg Tested
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
Power DFN3x3A
Top View
Top View
Bottom View
Bottom View
S2
S2
S2
G2
(S1/D2)
D1
D1
D1
D1
G1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Max Q1
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Units
V
±20
±20
V
16
18
12
14
64
72
13
15
7.8
9
ID
TC=100°C
Pulsed Drain Current C
IDM
TA=25°C
Continuous Drain
Current
Max Q2
IDSM
TA=70°C
30
A
A
Avalanche Current C
IAS
19
25
A
Avalanche Energy L=0.05mH C
EAS
9
16
mJ
VDS Spike
100ns
VSPIKE
36
36
V
Power Dissipation B
TC=100°C
TC=25°C
TA=25°C
Power Dissipation
A
PDSM
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev0 : April 2012
23
25
9
10
2.5
2.5
0.9
0.9
PD
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJC
-55 to 150
Typ Q1
40
70
4.5
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Max Q1
50
90
5.4
Typ Q2 Max Q2
40
50
70
90
4.2
5
W
W
°C
Units
°C/W
°C/W
°C/W
Page 1 of 10
AON7934
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
5
1.2
VGS=10V, ID=13A
TJ=125°C
VGS=4.5V, ID=10A
gFS
Forward Transconductance
VDS=5V, ID=13A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous CurrentG
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
VGS=10V, VDS=15V, ID=13A
0.9
Units
V
1
TJ=55°C
IGSS
Max
30
VDS=30V, VGS=0V
VGS(th)
Coss
Typ
1.8
100
nA
2.2
V
8.3
10.2
11.2
13.7
12.4
15.8
50
0.7
µA
mΩ
mΩ
S
1
V
16
A
485
pF
235
pF
32
pF
1.8
2.7
Ω
8
11
nC
3.9
5.3
nC
1.1
nC
Gate Drain Charge
2.1
nC
tD(on)
Turn-On DelayTime
3.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
2.8
ns
16.3
ns
tf
Turn-Off Fall Time
3
ns
trr
Body Diode Reverse Recovery Time
Qrr
IF=13A, dI/dt=500A/µs
9.9
Body Diode Reverse Recovery Charge IF=13A, dI/dt=500A/µs
12.9
ns
nC
VGS=10V, VDS=15V, RL=1.2Ω,
RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA t≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0 : April 2012
www.aosmd.com
Page 2 of 10
AON7934
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
60
10V
6V
VDS=5V
8V
50
4.5V
60
40
ID(A)
ID (A)
4V
40
3.5V
125°C
30
25°C
20
20
VGS=3V
10
0
0
0
1
2
3
4
5
0
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
2
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
1.6
Normalized On-Resistance
20
VGS=4.5V
15
RDS(ON) (mΩ
Ω)
1
10
VGS=10V
5
0
VGS=10V
ID=13A
1.4
1.2
VGS=4.5V
ID=10A
1
0.8
0
2
4
6
8
10
12
14
0
25
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
25
1.0E+02
ID=13A
1.0E+01
20
40
125°C
125°C
15
1.0E-01
IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
10
25°C
1.0E-02
1.0E-03
25°C
5
1.0E-04
1.0E-05
0
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: April 2012
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 10
AON7934
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
700
VDS=15V
ID=13A
600
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
500
400
300
Coss
200
2
Crss
100
0
0
0
2
4
6
8
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
0
30
200
1000.0
160
100.0
RDS(ON)
limited
10.0
TJ(Max)=150°C
TC=25°C
10µs
100us
1ms
1.0
DC
Power (W)
ID (Amps)
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
120
TJ(Max)=150°C
TC=25°C
0.1
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=5.4°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: April 2012
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Page 4 of 10
AON7934
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
25
Current rating ID(A)
Power Dissipation (W)
30
20
15
10
30
20
10
5
0
0
0
25
50
75
100
125
TCASE (°C)
Figure 12: Power De-rating (Note F)
0
150
25
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=90°C/W
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: April 2012
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Page 5 of 10
AON7934
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
5
1.2
VGS=10V, ID=15A
VGS=4.5V, ID=10A
9.1
11.6
mΩ
100
0.7
1
V
18
A
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous CurrentG
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
V
7.7
Forward Transconductance
Rg
nA
2.2
10.3
VSD
Reverse Transfer Capacitance
100
6.3
gFS
Crss
1.8
µA
8.4
TJ=125°C
VDS=5V, ID=15A
Output Capacitance
Units
V
1
TJ=55°C
IGSS
Max
30
VDS=30V, VGS=0V
VGS(th)
Coss
Typ
VGS=10V, VDS=15V, ID=15A
0.6
mΩ
S
807
pF
314
pF
40
pF
1.3
2
Ω
12.9
17.5
nC
6
8.5
nC
2.1
nC
Gate Drain Charge
3
nC
tD(on)
Turn-On DelayTime
4.8
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=15A, dI/dt=500A/µs
VGS=10V, VDS=15V, RL=1Ω,
RGEN=3Ω
IF=15A, dI/dt=500A/µs
3.3
ns
18.8
ns
3.3
ns
11.3
ns
nC
15
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: April 2012
www.aosmd.com
Page 6 of 10
AON7934
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10V
60
8V
VDS=5V
5V
80
4.5V
60
4V
50
ID(A)
ID (A)
40
125°C
30
25°C
40
20
Vgs=3V
20
10
0
0
0
1
2
3
4
0
5
2
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
10
Normalized On-Resistance
1.6
9
VGS=4.5V
RDS(ON) (mΩ
Ω)
1
8
7
6
VGS=10V
5
VGS=10V
ID=15A
1.4
17
5
2
VGS=4.5V
ID=10A
10
1.2
1
0.8
4
0
3
0
6
9
12
15
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
20
1.00E+02
ID=15A
1.00E+01
40
125°C
1.00E+00
125°C
10
IS (A)
RDS(ON) (mΩ
Ω)
15
5
25°C
1.00E-01
1.00E-02
25°C
1.00E-03
0
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: April 2012
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 7 of 10
AON7934
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1200
VDS=15V
ID=15A
1000
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
800
600
Coss
400
200
0
Crss
0
0
3
6
9
12
15
0
5
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
30
200
1000.0
100.0
TJ(Max)=150°C
TC=25°C
160
10µs
RDS(ON)
limited
10.0
100µs
1ms
DC
1.0
Power (W)
ID (Amps)
10
120
TJ(Max)=150°C
TC=25°C
0.1
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=5°C/W
40
1
PD
0.1
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: April 2012
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Page 8 of 10
AON7934
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
25
Current rating ID(A)
Power Dissipation (W)
30
20
15
10
40
30
20
10
5
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
TCASE (°C)
Figure 13: Current De-rating (Note F)
TCASE (°C)
Figure 12: Power De-rating (Note F)
150
10000
Power (W)
TA=25°C
1000
100
10
1
0.00001
0.001
0.1
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
1000
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
40
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
Rev 0: April 2012
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Page 9 of 10
AON7934
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0: April 2012
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 10 of 10