AO4441 60V P-Channel MOSFET General Description Product Summary The AO4441 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) -60V -4A RDS(ON) (at VGS=-10V) < 100mΩ RDS(ON) (at VGS = -4.5V) < 130mΩ VDS SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current A VGS TA=25°C Pulsed Drain Current B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Rev.2.0: August 2013 Steady-State Steady-State A 3.1 W 2 TJ, TSTG Symbol t ≤ 10s V -20 PD TA=70°C ±20 -3.1 IDM TA=25°C Power Dissipation A Units V -4 ID TA=70°C Maximum -60 RθJA RθJL www.aosmd.com -55 to 150 Typ 24 54 21 °C Max 40 75 30 Units °C/W °C/W °C/W Page 1 of 5 AO4441 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -60 -1 TJ=55°C Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250µA RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-3A gFS Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance f=1MHz Qgs Gate Source Charge Qgd VGS=-10V, VDS=-30V, ID=-4A Units µA ±100 nA -2.1 -3 V 80 100 130 102 130 10 -0.77 930 VGS=0V, VDS=-30V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge -5 -1 VGS=-10V, ID=-4A VDS=-5V, ID=-4A Max V VDS=-48V, VGS=0V IGSS Coss Typ mΩ mΩ S -1 V -4 A 1120 pF 85 pF 35 pF 7.2 9 Ω 16 20 nC 8 10 nC 2.5 nC Gate Drain Charge 3.2 nC tD(on) Turn-On DelayTime 8 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-4A, dI/dt=100A/µs 27 Qrr Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs 32 VGS=-10V, VDS=-30V, RL=7.5Ω, RGEN=3Ω 3.8 ns 31.5 ns 7.5 ns 35 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: August 2013 www.aosmd.com Page 2 of 5 AO4441 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 10 -6V 15 VDS=-5V -4.5V -4V -5V -10V 8 -ID(A) -ID (A) 6 10 -3.5V 125°C 4 25°C 5 2 VGS=-3V 0 0 0 1 2 3 4 0 5 1 110 3 4 5 6 Normalized On-Resistance 2.00 1.80 100 RDS(ON) (mΩ Ω) 2 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics VGS=-10V ID=-4A 1.60 VGS=-4.5V 90 1.40 1.20 VGS=-10V 80 VGS=-4.5V ID=-3A 1.00 0.80 70 0 2 0 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 200 1.0E+01 ID=-4A 180 1.0E+00 1.0E-01 -IS (A) RDS(ON) (mΩ Ω) 160 140 125°C 120 125°C 1.0E-02 25°C 1.0E-03 100 1.0E-04 25°C 80 1.0E-05 60 2 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Rev.2.0: August 2013 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics Page 3 of 5 AO4441 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1500 VDS=-30V ID=-4A 1200 Capacitance (pF) -VGS (Volts) 8 6 4 2 Ciss 900 600 Coss Crss 300 0 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 20 0 5 10 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics 40 100.0 TJ(Max)=150°C TA=25°C 10µs RDS(ON) limited 10.0 100µs Power (W) -ID (Amps) 30 1ms 1.0 1s TJ(Max)=150°C TA=25°C 20 10 10ms 10s 0.1s DC 0 0.1 0.1 1 10 0.001 100 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) -VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 Zθ JA Normalized Transient Thermal Resistance 25 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Rev.2.0: August 2013 www.aosmd.com Page 4 of 5 AO4441 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.2.0: August 2013 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 5 of 5