AO4840 40V Dual N-Channel MOSFET General Description Product Summary The AO4840 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. This dual device is suitable for use as a load switch or in PWM applications. ID (at VGS=10V) VDS 40V 6A RDS(ON) (at VGS=10V) < 30mΩ RDS(ON) (at VGS=4.5V) < 38mΩ 100% UIS Tested 100% Rg Tested SOIC-8 Top View D1 D2 Bottom View Top View S2 G2 S1 G1 1 2 3 4 D2 D2 D1 D1 8 7 6 5 G1 G2 S1 S2 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current Avalanche Current C C Avalanche energy L=0.1mH TA=25°C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 5: August 2011 Steady-State Steady-State V A 5 30 IAS, IAR 14 A EAS, EAR 10 mJ 2 W 1.3 TJ, TSTG Symbol t ≤ 10s ±20 IDM PD TA=70°C Units V 6 ID TA=70°C C Maximum 40 RθJA RθJL www.aosmd.com -55 to 150 Typ 48 74 32 °C Max 62.5 90 40 Units °C/W °C/W °C/W Page 1 of 5 AO4840 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Max 40 1 TJ=55°C µA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.7 ID(ON) On state drain current VGS=10V, VDS=5V 30 Units V VDS=40V, VGS=0V VGS(th) 100 nA 2.5 3 V 24 30 36 45 VGS=4.5V, ID=5A 30 38 mΩ 1 V 2 A VGS=10V, ID=6A RDS(ON) Typ Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=6A 27 VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance mΩ S 410 516 650 pF VGS=0V, VDS=20V, f=1MHz 55 82 110 pF 25 43 60 pF VGS=0V, VDS=0V, f=1MHz 2.3 4.6 6.9 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 8.9 10.8 nC Qg(4.5V) Total Gate Charge 4.3 5.6 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=20V, ID=6A VGS=10V, VDS=20V, RL=3.3Ω, RGEN=3Ω 2.4 nC 1.4 nC 6.4 ns 3.6 ns 16.2 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=6A, dI/dt=100A/µs 18 Qrr Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs 10 6.6 ns 24 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 5: August 2011 www.aosmd.com Page 2 of 5 AO4840 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 40 10V 5V 30 20 ID(A) 30 ID (A) VDS=5V 4.5V 4V 20 125°C 10 10 VGS=3.5V 25°C 0 0 0 1 2 3 4 1 5 40 3 4 5 Normalized On-Resistance 2.2 35 RDS(ON) (mΩ Ω) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 30 25 VGS=10V 2 VGS=10V ID=6A 1.8 17 5 2 VGS=4.5V 10 1.6 1.4 1.2 ID=5A 1 0.8 20 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 80 1.0E+02 ID=6A 1.0E+01 70 40 1.0E+00 IS (A) RDS(ON) (mΩ Ω) 60 50 125°C 40 1.0E-02 1.0E-03 25°C 30 1.0E-04 20 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 5: August 2011 125°C 1.0E-01 4 www.aosmd.com 25°C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO4840 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 800 VDS=20V ID=6A 700 8 Capacitance (pF) VGS (Volts) 600 6 4 Ciss 500 400 300 200 Coss 2 100 0 Crss 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 10 100.0 0 5 10 15 20 25 30 35 VDS (Volts) Figure 8: Capacitance Characteristics 40 10000 TA=25°C 10µs RDS(ON) limited 1000 100µs 1.0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 Power (W) ID (Amps) 10.0 100 10 10s DC 0.0 1 0.01 VDS 1 (Volts) 0.1 10 100 0.00001 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 0.1 PD 0.01 Ton T 0.001 0.00001 Rev 5: August 2011 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) www.aosmd.com 100 1000 Page 4 of 5 AO4840 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 5: August 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5