AOSMD AON4807

AON4807
30V Dual P-Channel MOSFET
General Description
Product Summary
The AON4807 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=-10V)
-30V
-4A
RDS(ON) (at VGS=-10V)
< 68mΩ
RDS(ON) (at VGS =-4.5V)
< 105mΩ
Top View
DFN 3x2A
Bottom View
VDS
S1
G1
S2
G2
1
8
2
7
D1
D1
3
6
D2
4
5
D2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 1: July 2012
Steady-State
Steady-State
±20
V
A
1.9
W
1.2
TJ, TSTG
Symbol
t ≤ 10s
Units
V
-18
PD
TA=70°C
Maximum
-30
-3
IDM
TA=25°C
S2
-4
ID
TA=70°C
Pulsed Drain Current C
Power Dissipation B
G2
G1
Pin 1
Continuous Drain
Current
D2
D1
Top View
RθJA
RθJL
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-55 to 150
Typ
51.5
82
37
°C
Max
65
100
50
Units
°C/W
°C/W
°C/W
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AON4807
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30
-1
TJ=55°C
-5
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS，ID=-250µA
-1.3
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-18
nA
-2.3
V
54
68
76
95
VGS=-4.5V, ID=-3A
80
105
8
TJ=125°C
gFS
Forward Transconductance
VDS=-5V, ID=-4A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
±100
Static Drain-Source On-Resistance
Output Capacitance
Units
-1.8
VGS=-10V, ID=-4A
Coss
Max
V
VDS=-30V, VGS=0V
IGSS
RDS(ON)
Typ
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
A
-0.78
mΩ
mΩ
S
-1
V
-2.5
A
290
pF
60
pF
40
pF
16
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
5.8
10
nC
Qg(4.5V) Total Gate Charge
2.8
6
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=-10V, VDS=-15V, ID=-4A
VGS=-10V, VDS=-15V,
RL=3.75Ω, RGEN=3Ω
1.1
nC
1.3
nC
6
ns
5
ns
21
ns
tf
Turn-Off Fall Time
9
ns
trr
Body Diode Reverse Recovery Time
IF=-4A, dI/dt=100A/µs
10
Qrr
Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs
20
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: July 2012
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Page 2 of 5
AON4807
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
10
-10V
VDS=-5V
-6V
8
-4.5V
15
-ID(A)
-ID (A)
6
-4V
10
4
125°C
-3.5V
5
2
25°C
VGS=-3V
0
0
0
1
2
3
4
0
5
110
2
3
4
5
1.6
Normalized On-Resistance
100
VGS=-4.5V
90
RDS(ON) (mΩ
Ω)
1
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
80
70
60
50
VGS=-10V
ID=-4A
1.4
17
5
VGS=-4.5V 2
ID=-3A
10
1.2
1
VGS=-10V
0.8
40
0
0
2
4
6
8
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
220
1.0E+01
ID=-4A
1.0E+00
40
1.0E-01
140
-IS (A)
RDS(ON) (mΩ
Ω)
180
125°C
125°C
1.0E-02
100
1.0E-03
25°C
60
25°C
1.0E-04
20
0.0
2
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: July 2012
0.2
0.4
0.6
0.8
1.0
1.2
4
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-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON4807
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
400
VDS=-15V
ID=-4A
350
Ciss
8
Capacitance (pF)
-VGS (Volts)
300
6
4
250
200
150
Coss
100
2
50
0
Crss
0
0
1
2
3
4
5
6
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
10000
100.0
TA=25°C
RDS(ON)
limited
100µs
1.0
1ms
10ms
0.1
TJ(Max)=150°C
TA=25°C
Power (W)
ID (Amps)
1000
10µs
10.0
100
10
10s
DC
1
0.0
0.00001
0.01
0.1
1
VDS (Volts)
10
0.001
0.1
10
1000
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=100°C/W
0.1
PD
Single Pulse
0.01
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: July 2012
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Page 4 of 5
AON4807
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 1: July 2012
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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Page 5 of 5