AO3409 30V P-Channel MOSFET General Description Product Summary The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) -30V -2.6A RDS(ON) (at VGS=-10V) < 110mΩ RDS(ON) (at VGS=-4.5V) < 180mΩ VDS SOT23 Top View D Bottom View D D G S G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 9: November 2010 Steady-State Steady-State A 1.4 W 1 TJ, TSTG Symbol t ≤ 10s V -20 PD TA=70°C ±20 -2.2 IDM TA=25°C Power Dissipation B Units V -2.6 ID TA=70°C Maximum -30 RθJA RθJL www.aosmd.com -55 to 150 Typ 70 100 63 °C Max 90 125 80 Units °C/W °C/W °C/W Page 1 of 5 AO3409 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.4 ID(ON) On state drain current VGS=-10V, VDS=-5V -20 nA -2.4 V 77 110 100 140 VGS=-4.5V, ID=-2A 125 180 mΩ 5 -1 V -1.5 A TJ=125°C gFS Forward Transconductance VDS=-5V, ID=-2.6A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current Reverse Transfer Capacitance Rg Gate resistance A -0.8 DYNAMIC PARAMETERS Input Capacitance Ciss Crss µA ±100 Static Drain-Source On-Resistance Output Capacitance Units -1.9 VGS=-10V, ID=-2.6A Coss Max V VDS=-30V, VGS=0V IGSS RDS(ON) Typ 197 VGS=0V, VDS=-15V, f=1MHz mΩ S 240 42 pF pF 26 37 pF 7.2 11.0 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 4.3 5.2 nC Qg(4.5V) Total Gate Charge 2.2 3 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-2.6A 3.5 0.7 nC 1.1 nC 7.5 ns VGS=-10V, VDS=-15V, RL=5.8Ω, RGEN=3Ω 4.1 ns 11.8 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-2.6A, dI/dt=100A/µs 11.3 3.8 Qrr Body Diode Reverse Recovery Charge IF=-2.6A, dI/dt=100A/µs 4.4 ns 14 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 9: November 2010 www.aosmd.com Page 2 of 5 AO3409 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10 -10V VDS=-5V -6V -8V 12 8 -5V 6 -ID(A) -ID (A) 9 -4.5V 6 4 125°C -4V 2 3 25°C VGS=-3.5V 0 0 0 1 2 3 4 0 5 1 200 3 4 5 6 1.6 Normalized On-Resistance 180 160 RDS(ON) (mΩ ) 2 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 140 VGS=-4.5V 120 100 80 60 1.4 VGS=-10V ID=-2.6A 1.2 VGS=-4.5V ID=-2A 1 17 5 2 10 VGS=-10V 0.8 40 0 2 4 6 8 0 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 300 1.0E+02 ID=-2.6A 1.0E+01 260 40 1.0E+00 180 -IS (A) RDS(ON) (mΩ ) 220 125°C 140 1.0E-01 125°C 25°C 1.0E-02 1.0E-03 25°C 100 1.0E-04 1.0E-05 60 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 9: November 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO3409 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 300 VDS=-15V ID=-2.6A 250 Ciss Capacitance (pF) -VGS (Volts) 8 6 4 200 150 100 2 Coss 50 0 Crss 0 0 1 2 3 4 Qg (nC) Figure 7: Gate-Charge Characteristics 5 0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 10000 100.0 TA=25°C 10.0 1000 1.0 0.1 100µs 1ms 10ms 100ms 1s 10s DC TJ(Max)=150°C TA=25°C Power (W) -ID (Amps) 10µs RDS(ON) limited 100 10 0.0 1 0.01 0.1 1 10 100 0.00001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 Zθ JA Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=125°C/W 0.1 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 9: November 2010 www.aosmd.com Page 4 of 5 AO3409 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 9: November 2010 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 5 of 5