AON7466 30V N-Channel MOSFET General Description Product Summary • The AON7466 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is suitable for use as a high side switch in SMPS and general purpose applications. VDS 30V 30A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 7.5mΩ RDS(ON) (at VGS = 4.5V) < 10.5mΩ • RoHS and Halogen-Free Compliant 100% UIS Tested 100% Rg Tested Top View DFN 3x3 EP Bottom View D Top View 1 8 2 7 3 6 4 5 G S Pin 1 Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current C V A 100 15 IDSM TA=70°C ±25 23 IDM TA=25°C Units V 30 ID TC=100°C Maximum 30 A 12 Avalanche Current C IAS 27 A Avalanche energy L=0.1mH C EAS 36 mJ VDS Spike VSPIKE 36 V Power Dissipation B 10µs TC=25°C PD TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 2.0: August 2014 3.1 Steady-State Steady-State RθJA RθJC www.aosmd.com W 2 TJ, TSTG Symbol t ≤ 10s W 10 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 25 -55 to 150 Typ 30 60 4.2 °C Max 40 75 5 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±25V Gate Threshold Voltage VDS=VGS ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=15V, ID=20A µA 5 1.5 0.55 Units V 1 TJ=55°C IGSS Max 30 VDS=30V, VGS=0V VGS(th) Coss Typ 1.97 500 nA 2.5 V 6.2 7.5 9.4 11.3 8.4 10.5 mΩ 1 V 30 A 55 0.7 mΩ S 1150 pF 180 pF 105 pF 1.1 1.65 Ω 20 30 nC 9.5 16 nC 2.7 nC Qgd Gate Drain Charge 5 nC tD(on) Turn-On DelayTime 6.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr 2 ns 17 ns 3.5 ns IF=20A, dI/dt=500A/µs 8.7 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 13.5 ns nC VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 2.0: August 2014 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 120 10V 5V 100 VDS=5V 4.5V 6V 80 60 4V ID(A) ID (A) 80 60 40 40 125°C 3.5V 20 20 25°C VGS=3V 0 0 1 2 3 4 0 0 5 2 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1.8 10 Normalized On-Resistance 12 RDS(ON) (mΩ) 1 VGS=4.5V 8 6 VGS=10V 4 2 VGS=10V ID=20A 1.6 1.4 17 VGS=4.5V 5 ID=20A 1.2 2 10 1 0.8 0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 1.0E+02 ID=20A 1.0E+01 20 40 125°C 15 IS (A) RDS(ON) (mΩ) 1.0E+00 125°C 10 1.0E-01 1.0E-02 25°C 1.0E-03 5 1.0E-04 25°C 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 2.0: August 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1600 VDS=15V ID=20A 1400 8 Ciss Capacitance (pF) VGS (Volts) 1200 6 4 1000 800 600 400 2 Coss 200 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 20 0 10µs 100.0 100µs 1ms 10ms 1.0 0.1 TJ(Max)=150°C TC=25°C 0.0 0.01 TJ(Max)=150°C TC=25°C 17 5 2 10 120 80 40 0.1 1 10 100 0 0.0001 VDS (Volts) 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 30 10µs RDS(ON) limited DC 10 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 160 Power (W) 10.0 5 200 1000.0 ID (Amps) Crss 0 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=5°C/W 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 2.0: August 2014 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 25 Current rating ID(A) Power Dissipation (W) 30 20 15 10 30 20 10 5 0 0 0 25 50 75 100 125 0 150 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F) TCASE (°C) Figure 13: Power De-rating (Note F) 10000 TA=25°C Power (W) 1000 17 5 2 10 100 10 1 0.00001 0 1000 18 0.001 0.1 10 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note H) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 2.0: August 2014 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev 2.0: August 2014 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6