AOSMD AON7820

AON7820
20V Dual N-Channel MOSFET
General Description
Product Summary
The AON7820 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RSS(ON). This device is ideal for load switch
and battery protection applications.
IS (at VGS=4.5V)
DFN 3x3 EP
Bottom View
Top View
VDS
20V
35A
RSS(ON) (at VGS=4.5V)
< 16mΩ
RSS(ON) (at VGS =3.5V)
< 17mΩ
RSS(ON) (at VGS =2.5V)
< 20mΩ
Typical ESD protection
HBM Class 2
D
S1
D1
D1
G1
S2
G
D2
G2
G
D2
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TC=25°C
Pulsed Drain Current C
TA=25°C
Power Dissipation B
TC=100°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev 0: August 2011
Steady-State
Steady-State
A
A
31
W
12.5
3.1
RθJA
RθJC
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W
2
TJ, TSTG
Symbol
t ≤ 10s
V
9
PDSM
TA=70°C
±12
11
PD
TA=25°C
Power Dissipation A
Units
V
80
ISSM
TC=25°C
Maximum
20
22
ISM
TA=70°C
S
35
IS
TC=100°C
Continuous Drain
Current
D
Top View
°C
-55 to 150
Typ
30
60
3.2
Max
40
75
4
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON7820
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
TJ=55°C
10
µA
0.7
1.0
V
13
16
18.7
23
VGS=3.5V, IS=10A
13.8
17
mΩ
VGS=2.5V, IS=9A
15.6
20
mΩ
65
1
V
35
A
Gate-Body leakage current
VDS=0V, VGS=±10V
VDS=VGS ID=250µA
0.4
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
80
VGS=4.5V, IS=11A
TJ=125°C
gFS
Forward Transconductance
VDS=5V, ID=11A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=10V, f=1MHz
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
A
0.58
mΩ
S
1375
1720
2065
pF
215
312
410
pF
105
177
250
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
µA
5
Gate Threshold Voltage
Crss
Units
V
1
VGS(th)
Static Drain-Source On-Resistance
Max
20
VDS=20V, VGS=0V
IGSS
RSS(ON)
Typ
14
VGS=4.5V, VDS=10V, IS=11A
VGS=4.5V, VDS=10V, RL=0.9Ω,
RGEN=3Ω
18.2
pF
ΚΩ
2.65
22
nC
9.5
nC
7.6
nC
1.65
µs
3.7
µs
5.4
µs
µs
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=11A, dI/dt=500A/µs
11
14.5
18
Qrr
Body Diode Reverse Recovery Charge IF=11A, dI/dt=500A/µs
17
21.5
26
10
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: August 2011
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Page 2 of 6
AON7820
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
40
4.5V
2.5V
VDS=5V
3.5V
30
2V
ID(A)
IS (A)
60
40
20
125°C
10
20
VGS=1.5V
25°C
0
0
0
1
2
3
4
0
5
20
Normalized On-Resistance
VGS=2.5V
16
VGS=3.5V
14
12
VGS=4.5V
1.5
2
2.5
VGS=3.5V
ID=10A
1.6
VGS=2.5V
ID=9A
1.4
1.2
VGS=4.5V
ID=11A
1
0.8
10
0
0
5
10
15
20
Is (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
35
1.0E+02
ID=11A
1.0E+01
30
40
125°C
25
125°C
20
IS (A)
1.0E+00
RDS(ON) (mΩ
Ω)
1
1.8
18
RDS(ON) (mΩ
Ω)
0.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
1.0E-01
25°C
1.0E-02
1.0E-03
15
1.0E-04
25°C
1.0E-05
10
0
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: August 2011
2
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON7820
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2000
5
VDS=10V
ID=11A
1600
Capacitance (pF)
VGS (Volts)
4
3
2
800
Coss
400
0
0
5
10
15
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
10.0
Power (W)
1ms
10ms
DC
TJ(Max)=150°C
TC=25°C
0.1
10
15
VDS (Volts)
Figure 8: Capacitance Characteristics
20
TJ(Max)=150°C
TC=25°C
160
10µs 100µs
1.0
5
200
10µs
RDS(ON)
limited
Crss
0
25
100.0
IS (Amps)
1200
1
0
Ciss
120
80
40
0
0.0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=4°C/W
1
PD
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: August 2011
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Page 4 of 6
AON7820
35
40
30
35
Current rating IS(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
10
5
30
25
20
15
10
5
0
0
0
25
50
75
100
125
TCASE (°
°C)
Figure 12: Power De-rating (Note F)
0
150
25
50
75
100
125
TCASE (°
°C)
Figure 13: Current De-rating (Note F)
150
10000
TA=25°C
Power (W)
1000
100
10
1
0.00001
0.001
0.1
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
1000
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
40
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: August 2011
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Page 5 of 6
AON7820
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0: August 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6