AOSMD AON6924

AON6924
30V Dual Asymmetric N-Channel MOSFET
General Description
Product Summary
The AON6924 is designed to provide a high efficiency
synchronous buck power stage with optimal layout and
board space utilization. It includes two specialized
MOSFETs in a dual Power DFN5x6A package. The Q1 “
High Side” MOSFET and the Q2 “Low Side” MOSFET with
integrated Schottky have been designed for optimal power
efficiency.The AON6924 is well suited for use in compact
DC/DC converter applications.
VDS
Q1
30V
Q2
30V
85A
ID (at VGS=10V)
60A
RDS(ON) (at VGS=10V)
<5.2mΩ
<1.6mΩ
RDS(ON) (at VGS = 4.5V)
<7.8mΩ
<1.9mΩ
100% UIS Tested
100% Rg Tested
DFN5X6A
Top View
Bottom View
S2
S2
S2
G2
PIN1
PHASE
(S1/D2)
D1
D1
D1
G1
D1
Top View
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current C
IDM
TA=25°C
C
Avalanche Energy L=0.1mH C
TC=25°C
Power Dissipation
B
Power Dissipation
A
TA=25°C
±12
V
60
85
38
66
200
510
Steady-State
Steady-State
28
22
A
40
68
A
80
231
mJ
31
104
12.5
41.5
2
2.2
1.3
1.4
TJ, TSTG
Symbol
t ≤ 10s
15
12
A
EAS, EAR
PDSM
TA=70°C
Junction and Storage Temperature Range
Rev 1: April 2011
±20
IAS, IAR
PD
TC=100°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Units
V
IDSM
TA=70°C
Avalanche Current
Max Q2
30
ID
TC=100°C
Continuous Drain
Current
Max Q1
VGS
TC=25°C
Bottom View
RθJA
RθJC
-55 to 150
Typ Q1
25
50
3.1
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Typ Q2
20
45
0.9
Max Q1 Max Q2
30
25
60
55
4
1.2
W
W
°C
Units
°C/W
°C/W
°C/W
Page 1 of 11
AON6924
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
TJ=55°C
5
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
200
100
nA
2.3
V
4.3
5.2
6.6
8
VGS=4.5V, ID=20A
6.2
7.8
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=20A
70
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
mΩ
mΩ
S
1
V
30
A
1040
1300
1560
pF
VGS=0V, VDS=15V, f=1MHz
370
530
690
pF
10
35
60
pF
VGS=0V, VDS=0V, f=1MHz
0.8
1.7
2.6
Ω
17
21.0
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
µA
1.7
VGS=10V, ID=20A
Output Capacitance
Units
V
1
IGSS
Coss
Max
30
VDS=30V, VGS=0V
VGS(th)
RDS(ON)
Typ
13
VGS=10V, VDS=15V, ID=20A
nC
3.9
nC
1.8
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
16
21
26
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
31
39
47
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
nC
7.2
5
ns
16
ns
20
ns
4
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1 : April 2011
www.aosmd.com
Page 2 of 11
AON6924
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
4V
10V
VDS=5V
100
80
4.5V
80
60
ID(A)
ID (A)
6V
60
40
40
3V
125°C
20
20
25°C
VGS=2.5V
0
0
0
1
2
3
4
1.5
5
2
7
3
3.5
4
Normalized On-Resistance
1.8
VGS=4.5V
6
RDS(ON) (mΩ )
2.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
5
VGS=10V
4
VGS=10V
ID=20A
1.6
1.4
17
5
VGS=4.5V
ID=20A
2
1.2
10
1
0.8
3
0
5
0
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
12
25
50
1.0E+02
ID=20A
1.0E+01
10
40
8
125°C
IS (A)
RDS(ON) (mΩ )
1.0E+00
6
25°C
1.0E-01
1.0E-02
125°C
1.0E-03
25°C
4
1.0E-04
2
1.0E-05
3
4
5
6
7
8
9
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1 : April 2011
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 11
AON6924
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2000
VDS=15V
ID=20A
8
Ciss
Capacitance (pF)
VGS (Volts)
1500
6
4
1000
Coss
500
2
Crss
0
0
0
5
10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
20
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
200
1000.0
10µs
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100us
10.0
1ms
10ms
DC
1.0
TJ(Max)=150°C
TC=25°C
0.1
120
80
40
0.0
0.01
160
Power (W)
100.0
ID (Amps)
5
0.1
1
10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
0
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
RθJC=4°C/W
0.1
0.01
PD
Single Pulse
Ton
T
0.001
0.00001
Rev 1 : April 2011
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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10
Page 4 of 11
AON6924
40
1000
TA=100°C
TA=25°C
100
Power Dissipation (W)
IAR (A) Peak Avalanche Current
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
TA=125°C
TA=150°C
30
20
10
0
10
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
(Note C)
25
50
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
70
60
TA=25°C
1000
50
Power (W)
Current rating ID(A)
150
40
30
17
5
2
10
100
20
10
10
0
0
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
1
0.00001
150
0.001
0.1
10
0
1000
18
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1 : April 2011
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Page 5 of 11
AON6924
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=10mA, VGS=0V
Max
30
0.5
TJ=55°C
100
Gate-Body leakage current
VDS=0V, VGS= ±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
510
Units
V
VDS=30V, VGS=0V
IGSS
mA
100
nA
1.5
2.1
V
1.2
1.6
1.9
2.5
VGS=4.5V, ID=20A
1.5
1.9
VGS=10V, ID=20A
RDS(ON)
Typ
Static Drain-Source On-Resistance
TJ=125°C
A
mΩ
mΩ
gFS
Forward Transconductance
VDS=5V, ID=20A
180
S
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.36
V
IS
Maximum Body-Diode Continuous CurrentG
DYNAMIC PARAMETERS
Ciss
Input Capacitance
85
A
6550
8190
9830
pF
630
900
1170
pF
400
670
950
pF
0.3
0.65
1.0
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
110
140
170
nC
Qg(4.5V) Total Gate Charge
48
60
72
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
17
nC
20
nC
15
ns
17
ns
103
ns
18
IF=20A, dI/dt=500A/µs
ns
12.5
16
20
27
34
41
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1 : April 2011
www.aosmd.com
Page 6 of 11
AON6924
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
90
10V
80
4.5V
80
70
70
3.5V
60
ID(A)
60
ID (A)
VDS=5V
90
2.5V
50
VGS=2.25V
40
50
40
30
30
20
20
10
10
125°C
25°C
0
0
0
1
2
3
4
1.5
5
1.7
Normalized On-Resistance
1.5
RDS(ON) (mΩ )
2
2.25
2.5
2
1.6
1.4
VGS=4.5V
1.3
1.2
VGS=10V
1.1
1.0
VGS=4.5V
ID=20A
1.8
1.6
17
1.4
5
VGS=10V
ID=20A2
1.2
10
1
0.8
0
5
10
15
20
25
30
0
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
1.0E+02
4
ID=20A
1.0E+01
125°C
40
1.0E+00
3
25°C
IS (A)
RDS(ON) (mΩ )
1.75
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
125°C
2
1.0E-01
1.0E-02
1.0E-03
1
25°C
1.0E-04
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1 : April 2011
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0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 7 of 11
AON6924
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
12000
10
VDS=15V
ID=20A
10000
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
8000
6000
4000
2
2000
Crss
0
0
0
30
60
90
120
Qg (nC)
Figure 7: Gate-Charge Characteristics
150
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
1500
1000.0
10µs
RDS(ON)
limited
1200
1ms
DC
10.0
10ms
1.0
TJ(Max)=150°C
TC=25°C
0.1
0.1
1
VDS (Volts)
900
600
300
0
0.0001
0.0
0.01
TJ(Max)=150°C
TC=25°C
100µs
Power (W)
100.0
ID (Amps)
Coss
10
100
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.2°C/W
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
T
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1 : April 2011
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Page 8 of 11
AON6924
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=25°C
TA=100°C
100
TA=125°C
TA=150°C
100
80
60
40
20
0
10
0.000001
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
0.001
25
50
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
100
TA=25°C
80
1000
60
Power (W)
Current rating ID(A)
150
40
20
17
5
2
10
100
10
0
0
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
150
0
1
0.00001
0.001
0.1
10 18
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junctionto-Ambient (Note G)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=55°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
Rev 1 : April 2011
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Page 9 of 11
AON6924
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
0.5
1.0E-02
0.4
20A
VDS=30V
VSD (V)
IR (A)
1.0E-03
VDS=15V
1.0E-04
10A
0.3
5A
0.2
IS=1A
1.0E-05
0.1
1.0E-06
0
50
100
150
200
Temperature (°C)
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature
45
7
50
100
150
200
Temperature (°C)
Figure 18: Diode Forward voltage vs. Junction
Temperature
16
2
di/dt=800A/µs
di/dt=800A/µs
125ºC
30
4
125ºC
25
Irm
20
trr
2
5
10
15
20
25
0.5
0
7
Is=20A
10
15
20
3
trr
18
25ºC
20
4
125ºC
15
trr (ns)
Qrr
30
Is=20A
2.5
5
25
25
21
6
125ºC
5
IS (A)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
Irm (A)
Qrr (nC)
1
8
30
40
30
125ºC
S
IS (A)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
35
1.5
25ºC
15
0
125ºC
12
10
3
25ºC
trr (ns)
5
Irm (A)
25ºC
25ºC
14
Qrr
35
Qrr (nC)
6
S
40
25ºC
15
2
S
0
125º
12
1.5
3
25ºC
10
25ºC
5
2
Irm
1
200
400
600
800
1000
6
0.5
0
di/dt (A/µ
µs)
Figure 21: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Rev 1 : April 2011
1
S
125º
0
0
9
www.aosmd.com
200
400
600
800
1000
di/dt (A/µ
µs)
Figure 22: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Page 10 of 11
AON6924
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 1 : April 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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