AON7428 30V N-Channel MOSFET General Description Product Summary The AON7428 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ideal for load switch and battery protection applications. ID (at VGS=10V) 30V 50A RDS(ON) (at VGS=10V) < 2.8mΩ RDS(ON) (at VGS = 4.5V) < 3.6mΩ VDS 100% UIS Tested 100% Rg Tested Top View DFN 3.3x3.3 EP Bottom D Top View 1 8 2 7 3 6 4 5 G S Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentG Pulsed Drain Current C V A 250 34 IDSM TA=70°C ±20 39 IDM TA=25°C Continuous Drain Current Units V 50 ID TC=100°C Maximum 30 A 27 Avalanche Current C IAR, IAS 50 A Repetitive avalanche energy L=0.1mH C TC=25°C EAR, EAS 125 mJ Power Dissipation B TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 2: April 2011 6.2 Steady-State Steady-State RθJA RθJC www.aosmd.com W 4 TJ, TSTG Symbol t ≤ 10s W 33 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 PD -55 to 150 Typ 16 45 1.1 °C Max 20 55 1.5 Units °C/W °C/W °C/W Page 1 of 6 AON7428 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions ID=250µA, VGS=0V Min Typ 30 36 VDS=30V, VGS=0V Max V 1 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.1 ID(ON) On state drain current VGS=10V, VDS=5V 250 TJ=55°C µA 5 VDS=0V, VGS= ±20V 100 VGS=10V, ID=20A 1.7 Units 2.3 nA V A 2.3 2.8 3.8 4.6 VGS=4.5V, ID=20A 2.9 3.6 mΩ VDS=5V, ID=20A 100 1 V 50 A RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current G TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance mΩ S 2080 2600 3120 pF 300 430 560 pF 170 280 390 pF 1.7 3.5 5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 40 49 60 nC Qg(4.5V) Total Gate Charge 20 24 30 nC 8 10 12 nC 8 11 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A 5 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 7 ns 10 ns 58 ns 20 ns 14 18 22 30 37 45 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 2: April 2011 www.aosmd.com Page 2 of 6 AON7428 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 150 3.5V VDS=5V 4V,6V,10V 120 120 3V 90 ID(A) ID (A) 90 60 60 VGS=2.5V 30 0 1 2 3 4 5 1 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 2 3 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 4 Normalized On-Resistance 2 VGS=4.5V RDS(ON) (mΩ ) 25°C 0 0 3 2 VGS=10V 1 1.8 VGS=10V ID=20A 1.6 17 5 2 VGS=4.5V10 1.4 1.2 ID=20A 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 8 ID=20A 7 1.0E+01 40 1.0E+00 5 IS (A) 6 RDS(ON) (mΩ ) 125°C 30 125°C 1.0E-01 4 1.0E-02 3 1.0E-03 2 125°C 25°C 1.0E-04 25°C 1 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 2: April 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON7428 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4000 10 VDS=15V ID=20A 8 3500 Capacitance (pF) VGS (Volts) 3000 6 4 Ciss 2500 2000 1500 1000 2 Coss 500 0 Crss 0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 50 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 400 1000.0 350 10µs RDS(ON) limited 10.0 10µs 100µs 1ms DC 10ms 1.0 0.1 250 150 50 0.0 0.1 1 VDS (Volts) 10 0 0.0001 100 10 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 17 5 2 10 200 100 TJ(Max)=150°C TC=25°C 0.01 TJ(Max)=150°C TC=25°C 300 Power (W) ID (Amps) 100.0 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 40 RθJC=1.5°C/W 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 2: April 2011 www.aosmd.com Page 4 of 6 AON7428 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 90 80 TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100°C 100 TA=150°C TA=125°C 70 60 50 40 30 20 10 0 10 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 60 25 50 75 125 150 10000 TA=25°C 50 1000 40 Power (W) Current rating ID(A) 100 TCASE (°C) Figure 13: Power De-rating (Note F) 30 20 17 5 2 10 100 10 10 1 0.00001 0 0 25 50 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) Zθ JA Normalized Transient Thermal Resistance 10 1 0.001 0.1 10 1000 0 18 150 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 40 RθJA=55°C/W 0.1 0.01 PD 0.001 0.0001 0.0001 Single Pulse 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 2: April 2011 www.aosmd.com Page 5 of 6 AON7428 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 2: April 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6