AOSMD AON6454A

AON6454A
150V N-Channel MOSFET
General Description
Product Summary
The AON6454A combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON).This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
VDS
ID (at VGS=10V)
150V
31A
RDS(ON) (at VGS=10V)
< 38mΩ
RDS(ON) (at VGS=7V)
< 44mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
G
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
C
V
A
65
5
IDSM
TA=70°C
±20
20
IDM
TA=25°C
Units
V
31
ID
TC=100°C
Maximum
150
A
4.0
Avalanche Current C
IAS, IAR
12
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
7
mJ
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 0: April 2011
2.3
Steady-State
Steady-State
RθJA
RθJC
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W
1.5
TJ, TSTG
Symbol
t ≤ 10s
W
33
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
83
PD
TC=100°C
-55 to 150
Typ
14
40
1
°C
Max
17
55
1.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON6454A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
150
Max
1
TJ=55°C
µA
5
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
3.4
ID(ON)
On state drain current
VGS=10V, VDS=5V
65
Units
V
VDS=150V, VGS=0V
IGSS
±100
nA
4
4.6
V
31
38
59
72
VGS=7V, ID=20A
35
44
mΩ
35
1
V
85
A
VGS=10V, ID=20A
RDS(ON)
Typ
Static Drain-Source On-Resistance
TJ=125°C
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
A
0.69
mΩ
S
1365
1710
2055
pF
VGS=0V, VDS=75V, f=1MHz
100
150
200
pF
30
50
70
pF
VGS=0V, VDS=0V, f=1MHz
0.5
1.1
1.7
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
25
32.5
40
nC
Qg(4.5V) Total Gate Charge
5
7.8
10
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=75V, ID=20A
VGS=10V, VDS=75V, RL=3.75Ω,
RGEN=3Ω
9.5
nC
13.5
nC
12
ns
8
ns
20
ns
tf
Turn-Off Fall Time
4.5
ns
trr
Body Diode Reverse Recovery Time
IF=10A, dI/dt=500A/µs
33
Qrr
Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs
350
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: April 2011
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Page 2 of 6
AON6454A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
50
10V
VDS=5V
60
7V
40
8V
30
40
ID(A)
ID (A)
50
6.5V
30
20
125°C
6V
20
10
10
25°C
5.5V
VGS=5V
0
0
0
1
2
3
4
2
5
3
45
5
6
7
8
2.4
Normalized On-Resistance
VGS=7V
40
RDS(ON) (mΩ )
4
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
35
30
VGS=10V
25
20
2.2
VGS=10V
ID=20A
2
1.8
1.6
1.4
VGS=7V
ID=20A
1.2
1
17
5
2
10
0.8
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
70
ID=20A
1.0E+01
60
40
1.0E+00
50
IS (A)
RDS(ON) (mΩ )
125°C
125°C
1.0E-01
1.0E-02
40
25°C
1.0E-03
30
25°C
1.0E-04
1.0E-05
20
4
5
6
7
8
9
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: April 2011
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON6454A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2800
10
VDS=75V
ID=20A
2400
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
2000
1600
1200
2
Coss
800
Crss
400
0
0
0
5
10
15
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
35
25
50
75
100
125
VDS (Volts)
Figure 8: Capacitance Characteristics
400
1000.0
TJ(Max)=150°C
TC=25°C
350
10µs
100.0
300
10µs
RDS(ON)
limited
10.0
Power (W)
ID (Amps)
150
100µs
1ms
10ms
DC
1.0
0.1
150
50
0.0
0.01
17
5
2
10
200
100
TJ(Max)=150°C
TC=25°C
0.1
250
1
10
VDS (Volts)
100
1000
0
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.5°C/W
1
PD
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: April 2011
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Page 4 of 6
AON6454A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
TA=25°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
100
TA=100°C
10
TA=150°C
TA=125°C
1
80
60
40
20
0
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
40
10000
30
1000
Power (W)
Current rating ID(A)
TA=25°C
20
17
5
2
10
100
10
10
1
0.00001
0
0
25
50
75
100
125
0.001
0.1
10
TCASE (°C)
Figure 14: Current De-rating (Note F)
1000
0
18
150
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=55°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: April 2011
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Page 5 of 6
AON6454A
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0: April 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6