AON6454A 150V N-Channel MOSFET General Description Product Summary The AON6454A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) 150V 31A RDS(ON) (at VGS=10V) < 38mΩ RDS(ON) (at VGS=7V) < 44mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Continuous Drain Current C V A 65 5 IDSM TA=70°C ±20 20 IDM TA=25°C Units V 31 ID TC=100°C Maximum 150 A 4.0 Avalanche Current C IAS, IAR 12 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 7 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 0: April 2011 2.3 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.5 TJ, TSTG Symbol t ≤ 10s W 33 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 PD TC=100°C -55 to 150 Typ 14 40 1 °C Max 17 55 1.5 Units °C/W °C/W °C/W Page 1 of 6 AON6454A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 150 Max 1 TJ=55°C µA 5 Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 3.4 ID(ON) On state drain current VGS=10V, VDS=5V 65 Units V VDS=150V, VGS=0V IGSS ±100 nA 4 4.6 V 31 38 59 72 VGS=7V, ID=20A 35 44 mΩ 35 1 V 85 A VGS=10V, ID=20A RDS(ON) Typ Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance A 0.69 mΩ S 1365 1710 2055 pF VGS=0V, VDS=75V, f=1MHz 100 150 200 pF 30 50 70 pF VGS=0V, VDS=0V, f=1MHz 0.5 1.1 1.7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 25 32.5 40 nC Qg(4.5V) Total Gate Charge 5 7.8 10 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=75V, ID=20A VGS=10V, VDS=75V, RL=3.75Ω, RGEN=3Ω 9.5 nC 13.5 nC 12 ns 8 ns 20 ns tf Turn-Off Fall Time 4.5 ns trr Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/µs 33 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs 350 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: April 2011 www.aosmd.com Page 2 of 6 AON6454A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 70 50 10V VDS=5V 60 7V 40 8V 30 40 ID(A) ID (A) 50 6.5V 30 20 125°C 6V 20 10 10 25°C 5.5V VGS=5V 0 0 0 1 2 3 4 2 5 3 45 5 6 7 8 2.4 Normalized On-Resistance VGS=7V 40 RDS(ON) (mΩ ) 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 35 30 VGS=10V 25 20 2.2 VGS=10V ID=20A 2 1.8 1.6 1.4 VGS=7V ID=20A 1.2 1 17 5 2 10 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 70 ID=20A 1.0E+01 60 40 1.0E+00 50 IS (A) RDS(ON) (mΩ ) 125°C 125°C 1.0E-01 1.0E-02 40 25°C 1.0E-03 30 25°C 1.0E-04 1.0E-05 20 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: April 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6454A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2800 10 VDS=75V ID=20A 2400 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 2000 1600 1200 2 Coss 800 Crss 400 0 0 0 5 10 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics 0 35 25 50 75 100 125 VDS (Volts) Figure 8: Capacitance Characteristics 400 1000.0 TJ(Max)=150°C TC=25°C 350 10µs 100.0 300 10µs RDS(ON) limited 10.0 Power (W) ID (Amps) 150 100µs 1ms 10ms DC 1.0 0.1 150 50 0.0 0.01 17 5 2 10 200 100 TJ(Max)=150°C TC=25°C 0.1 250 1 10 VDS (Volts) 100 1000 0 0.0001 0.001 0.01 0.1 1 10 0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.5°C/W 1 PD 0.1 Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: April 2011 www.aosmd.com Page 4 of 6 AON6454A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 100 TA=100°C 10 TA=150°C TA=125°C 1 80 60 40 20 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 40 10000 30 1000 Power (W) Current rating ID(A) TA=25°C 20 17 5 2 10 100 10 10 1 0.00001 0 0 25 50 75 100 125 0.001 0.1 10 TCASE (°C) Figure 14: Current De-rating (Note F) 1000 0 18 150 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=55°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: April 2011 www.aosmd.com Page 5 of 6 AON6454A Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0: April 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6