AON7752

AON7752
30V N-Channel AlphaMOS
General Description
Product Summary
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Integrated Schottky Diode (SRFET)
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
ID (at VGS=10V)
30V
16A
RDS(ON) (at VGS=10V)
< 8.2mΩ
RDS(ON) (at VGS = 4.5V)
< 14.5mΩ
100% UIS Tested
100% Rg Tested
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
DFN 3x3 EP
Bottom View
Top View
VDS
D
Top View
1
8
2
7
3
6
4
5
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
G
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
CurrentG
Pulsed Drain Current C
Avalanche Current
C
V
12
A
15
IDSM
TA=70°C
±20
64
IDM
TA=25°C
Continuous Drain
Current
Units
V
16
ID
TC=100°C
Maximum
30
A
12
IAS
22
A
Avalanche energy L=0.05mH C
EAS
12
mJ
VDS Spike
VSPIKE
36
V
100ns
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
PD
TA=25°C
Rev 0 : April 2012
3.1
Steady-State
Steady-State
RθJA
RθJC
W
2
TJ, TSTG
Symbol
t ≤ 10s
W
8.3
PDSM
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
20
-55 to 150
Typ
30
60
5
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°C
Max
40
75
6
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON7752
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=10mA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS，ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
100
1.5
VGS=10V, ID=16A
TJ=125°C
VGS=4.5V, ID=10A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=0.2A,VGS=0V
IS
Maximum Body-Diode Continuous CurrentG
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
VGS=10V, VDS=15V, ID=16A
1
Units
V
0.5
TJ=55°C
VDS=5V, ID=16A
Max
30
VDS=30V, VGS=0V
IDSS
Coss
Typ
2
±100
nA
2.5
V
6.8
8.2
9.8
12
11.6
14.5
62
0.45
mA
mΩ
mΩ
S
0.65
V
16
A
605
pF
275
pF
36.5
pF
2
3
Ω
11
15
nC
5.5
8
nC
2
nC
Gate Drain Charge
2.6
nC
tD(on)
Turn-On DelayTime
5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
2.5
ns
17
ns
tf
Turn-Off Fall Time
3
ns
trr
Body Diode Reverse Recovery Time
Qrr
IF=16A, dI/dt=500A/µs
11.5
Body Diode Reverse Recovery Charge IF=16A, dI/dt=500A/µs
12.5
ns
nC
VGS=10V, VDS=15V, RL=0.9Ω,
RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : April 2012
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Page 2 of 6
AON7752
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
80
10V
4.5V
5V
VDS=5V
60
60
4V
ID(A)
ID (A)
7V
40
40
3.5V
125°C
20
20
25°C
VGS=3.0V
0
0
0
1
2
3
4
0
5
1
2
3
4
5
6
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
1.6
14
Normalized On-Resistance
VGS=4.5V
RDS(ON) (mΩ
Ω)
12
10
8
6
VGS=10V
4
2
VGS=10V
ID=16A
1.4
1.2
VGS=4.5V
ID=10A
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
25
1.0E+01
ID=16A
1.0E+00
20
125°C
40
IS (A)
RDS(ON) (mΩ
Ω)
1.0E-01
15
125°C
1.0E-02
10
25°C
1.0E-03
5
25°C
1.0E-04
1.0E-05
0
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0 : April 2012
4
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0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON7752
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1000
VDS=15V
ID=16A
800
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
400
Coss
2
200
0
0
0
5
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
15
5
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
25
200
160
10µs
100.0
RDS(ON)
100µs
DC
1ms
10ms
1.0
TJ(Max)=150°C
TC=25°C
0.1
TJ(Max)=150°C
TC=25°C
10µs
Power (W)
10.0
Crss
0
1000.0
ID (Amps)
600
17
5
2
10
120
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=6°C/W
PD
0.1
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0 : April 2012
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Page 4 of 6
AON7752
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
20
Current rating ID(A)
Power Dissipation (W)
25
15
10
5
0
10
5
0
0
25
50
75
100
125
TCASE (°C)
Figure 12: Power De-rating (Note F)
150
100.0
0
25
50
75
100
125
TCASE (°C)
Figure 13: Current De-rating (Note F)
150
10000
TA=25°C
TA=25°C
TA=100°C
10.0
Power (W)
IAR (A) Peak Avalanche Current
15
TA=150°C
1000
100
10
TA=125°C
1
1.0
1
10
100
1000
1E-05
0.001
0.1
10
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-Ambient
(Note H)
Time in avalanche, tA (µ
µs)
Figure 14: Single Pulse Avalanche capability (Note
C)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0 : April 2012
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Page 5 of 6
AON7752
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0 : April 2012
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6