UF28150J RF Power MOSFET Transistor 150W, 100MHz-500MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • DMOS structure • Lower capacitance for broadband operation • Common source configuration ABSOLUTE MAXIMUM RATINGS1, 2, 3 Parameter Symbol Rating Units Drain-Source Voltage VDS 65 V Gate-Source Voltage VGS 20 V Drain-Source Current IDS 16* A Power Dissipation PD 389 W Junction Temperature TJ 200 °C Storage Temperature TSTG -65 to +150 °C Thermal Resistance ΘJC 0.45 °C/W 1. Exceeding any one or combination of these limits may cause permanent damage to this device. 2. M/A-COM does not recommend sustained operation near these maximum limits. 3. At 25°C Tcase, unless noted. ELECTRICAL SPECIFICATIONS: 25°C Parameter Test Conditions Units Min. Max. BVDSS 65 — VDS = 28.0 V, VGS = 0.0V* IDSS — 4.0 Gate-Source Leakage Current VGS = 20 V, VDS = 0.0 V* IGSS — 4.0 Gate Threshold Voltage VDS = 10.0 V, IDS = 400.0 mA* VGS(TH) 2.0 6.0 Forward Transconductance VDS = 10.0 V, IDS = 4000.0 mA, ∆VGS = 1.0 V, 80µs pulse* GM 2.0 — Input Capacitance VDS = 28.0V, F = 1.0 MHz* CISS — 180 Output Capacitance VDS = 28.0V, F = 1.0 MHz* COSS — 120 Reverse Capacitance VDS = 28.0V, F = 1.0 MHz* CRSS — 32 Power Gain VDD = 28.0 V, IDQ = 400.0 mA, POUT = 150.0 W, F = 500 MHz GP 8 — Drain Efficiency VDD = 28.0 V, IDQ = 400.0 mA, POUT = 150.0 W, F = 500 MHz ηD 55 — Load Mismatch Tolerance VDD = 28.0 V, IDQ = 400.0 mA, POUT = 150.0 W, F = 500 MHz VSWR-T — 10:1** Drain-Source Breakdown Voltage VGS = 0.0 V, IDS = 20.0 mA* Drain-Source Leakage Current Notes: * Per side ** At all phase angles 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. UF28150J RF Power MOSFET Transistor 150W, 100MHz-500MHz, 28V M/A-COM Products Released; RoHS Compliant Typical Broadband Performance Curves Power Output vs Voltage PIN =24 W IDQ =400 mA F=500 MHz Capacitance vs Voltage F=1.0 MHz COSS Power Output (W) Capacitance (PF) CISS COSS VDD (V) VDS (V) Efficiency vs Frequency VDD =28W IDQ =400mA POUT =150W Gain vs Frequency VDD =28V POUT =100W IDQ =400mA Gain (dB) Efficiency (%) 65 60 55 50 Frequency (MHz) Frequency (MHz) Power Output (W) Power Output vs Power Input VDD =28W IDQ =400mA Power Input (W) 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. UF28150J RF Power MOSFET Transistor 150W, 100MHz-500MHz, 28V M/A-COM Products Released; RoHS Compliant TYPICAL OPTIMUM DEVICE IMPEDANCES F (MHz) ZIN (Ω) 100 3.7 - j5.9 ZLOAD (Ω) 3.0 - j0.7 300 2.7 - j5.9 2.6 - j0.55 500 2.5 - j2.9 2.5 - j0.5 VDD = 28V, IDQ = 400mA, POUT = 150W PARTS LIST C23 C1 C12 C2, 3, 13, 22 C7,16 C4,6,15,17 C18 1.0pF 9.1pF 11pF 270pF 680pF .015uF 50uF 50V R1 R2 R3 11K OHM .25 W. 10% 47 OHM .05 W. 10% 12 OHM .25 W. 10% T1 T2,3,4,5 T6 2.50’ OF 50 OHM (.85’ OD) SEMI-RIGID CABLE 2.50’ OF 10 OHM (.70’ OD) SEMI-RIGID CABLE 2.50’ OF 50 OHM (.141’ OD) SEMI-RIGID CABLE L1 L2 5uH 16 TURNS OF NO. 18 AWG ON TORID CORE (INDIANA GENERAL F6278-Q1) L3,4 4 TURNS OF NO. 18 AWG ON .125 DIAMETER RL1 9 TURNS OF NO. 18 AWG ON 15 OHM 2 W. 10% RESISTOR Q1A, 1B UF28150J HANDLING PROCEDURES: STATIC SENSITIVITY Please observe the following precautions to avoid damage: DMOS devices are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.