IMP C1226

®
ISO 9001 Registered
Process C1226
CMOS 1.2µm
100V CMOS, Double Metal - Double Poly
Electrical Characteristics
T = 25oC Unless otherwise noted
Symbol
N-Channel High Voltage Transistor
Threshold Voltage
HVTN
Punch Through Voltage
HVBVDSSN
ON Resistance
HVPR0N
Operating Voltage
N-Channel Low Voltage Transistor
Threshold Voltage
VTN
Body Factor
γN
Conduction Factor
βN
Effective Channel Length
LeffN
Width Encroachment
∆WN
Punch Through Voltage
BVDSSN
Poly Field Threshold Voltage VTFPN
Symbol
P-Channel High Voltage Transistor
Threshold Voltage
HVTP
Punch Through Voltage
HVBVDSSP
ON Resistance
HVPR0N
Operating Voltage
P-Channel Low Voltage Transistor
Threshold Voltage
VTP
Body Factor
γP
Conduction Factor
βP
Effective Channel Length
LeffP
Width Encroachment
∆WP
BVDSSP
Punch Through Voltage
Poly Field Threshold Voltage VTFP(P)
© 2001 IMP, Inc.
Minimum
Typical
Maximum
Unit
Comments
0.70
120
550
0.90
1.10
700
VGS = 5V
VDS = 100V
850
V
V
Ω
W/L = 147/5
0.65
5
8
0.45
0.475
78
1.35
0.4
12
15
Minimum
Typical
–0.70
–120
2000
0.30
64
-0.65
20
–5
–8
V
V1/2
µA/V 2
µm
µm
V
V
100x1.5µm
100x1.5µm
100x100µm
100x1.5µm
Per side
Maximum
Unit
Comments
–0.90
–1.10
2500
VGS = 5V
VDS = 100V
3000
V
V
Ω
W/L = 139/5
–0.45
0.6
25
1.5
0.4
–12
–12
–0.30
92
V
30
V
V1/2
µA/V 2
µm
µm
V
V
100x1.5µm
100x1.5µm
100x100µm
100x1.5µm
Per side
69
Process C1226
Physical Characteristics
Diffusion & Thin Films
Symbol
Starting Material p<100>
Well (field) Sheet Resistance ρN-well(f)
ρN+
N+ Sheet Resistance
N+ Junction Depth
xjN+
ρP+
P+ Sheet Resistance
P+ Junction Depth
xjP+
High-Voltage Gate Oxide Th
HTGOX
Gate Oxide Thickness
TGOX
Interpoly Oxide
IPOX
ρPOLY1
Gate Poly Sheet Resistance
ρM1
Metal-1 Sheet Resistance
ρ
Metal-2 Sheet Resistance
M2
Passivation Thickness
TPASS
High Voltage Section Rules
Min Channel Width
Min Spacing, Active Region, 5V
Poly1 Width/Space
Poly2 Width/Space
Contact Width/Space
Via Width/Space
Metal-1 Width/Space
Metal-2 Width/Space
70
Minimum
Typical
Maximum
Unit
1.0
20
1.7
35
0.3
110
0.3
24
24
42.0
30.0
45
29
200+900
2.4
50
KΩ/
Ω/
µm
Ω/
µm
nm
nm
nm
Ω/
mΩ/
mΩ/
nm
60
33.6
150
50.4
Comments
n-well
oxide+nit.
Layout Rules
C1226-11-01
4.0µm
2.0µm
1.5/2.0µm
3.0/2.0µm
1.5/1.5µm
1.5/1.5µm
2.5/1.5µm
2.5/1.5µm
Diffusion Overlap of Contact
Poly Overlap of Contact
Contact to Poly Space
Metal-1 Overlap of Contact
Minimum Pad Opening
Minimum Pad to Pad Spacing
Minimum Pad Pitch
1.0µm
1.0µm
1.5µm
1.0µm
65x65µm
5.0µm
80µm