® ISO 9001 Registered Process C1027 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Operating Voltage T=25oC Unless otherwise noted Maximum Unit Comments Minimum Typical 0.50 25 200 0.70 0.90 240 350 VGS = 5V VDS = 20V 0.65 0.75 79.0 0.70 1.05 0.95 95.0 1.10 V V1/2 µA/V 2 µm µm V V 100x1.0µm 100x1.0µm 100x100µm 100x1.0µm Per side 8 14 0.85 0.85 87.0 0.90 0.60 13 18 Symbol P-Channel Low Voltage Transistor Threshold Voltage VTP γP Body Factor Conduction Factor βP Effective Channel Length LeffP Width Encroachment ∆WP BVDSSP Punch Through Voltage Poly Field Threshold Voltage VTFP(P) Minimum Typical Maximum Unit Comments –1.25 0.4 24.0 0.72 –1.05 0.5 28.0 0.97 0.60 –12 –18 – 0.85 0.6 32.0 1.12 V V1/2 µA/V 2 µm µm V V 100x1.0µm 100x1.0µm 100x100µm 100x1.0µm Per side Capacitance Gate Oxide Metal-1 to Poly1 Metal-2 to Metal-1 Minimum Typical 1.727 0.046 0.038 Maximum Unit fF/µm2 fF/µm2 fF/µm2 Comments N-Channel Low Voltage Transistor Threshold Voltage VTN γN Body Factor βN Conduction Factor Effective Channel Length LeffN ∆WN Width Encroachment Punch Through Voltage BVDSSN Poly Field Threshold Voltage VTFPN © Daily Silver IMP Symbol COX CM1P CMM –8 –14 V V Ω V 100x2.0µm 25 Process C1027 Electrical Characteristics Vertical NPN Transistor Beta Early Voltage Cut-Off Frequency Symbol hFE VAN fτ Minimum 50 30 Lateral PNP Beta Early Voltage Symbol hFE VAP Minimum 10 Low TCR P-Poly Resistor Resistivity TCR Symbol Minimum 180 –100 Typical 100 34 6.2 Maximum 150 Typical 40 TBD Maximum 100 Typical 230 0 Maximum 290 +50 Unit Comments 4.5x4.5mm GHz Unit Comments V Unit Ω/o ppm/˚C Comments Unit Ω-cm KΩ/o Ω/o µm Ω/o µm nm nm nm Ω/o mΩ/o mΩ/o nm Comments Physical Characteristics Diffusion & Thin Films Symbol Starting Material p<100> Well (field) Sheet Resistance ρN-well(f) ρN+ N+ Sheet Resistance N+ Junction Depth xjN+ ρP+ P+ Sheet Resistance P+ Junction Depth xjP+ High-Voltage Gate Oxide Th HTGOX Gate Oxide Thickness TGOX Interpoly Oxide Thickness IρOX ρPOLY1 Gate Poly Sheet Resistance ρM1 Metal-1 Sheet Resistance ρM2 Metal-2 Sheet Resistance Passivation Thickness TPASS Minimum 25 0.65 22.0 40.0 23.0 35.0 19.0 Typical 0.80 37.0 0.45 57.0 0.50 20 20 47 38.0 45.0 25.0 200+900 Maximum 50 1.10 50.0 80.0 53.0 65.0 35.0 n-well oxide+nit. Layout Rules Min Channel Width Min spacing, active region, 5V Min spacing, active region, 12V Poly1 (Gate) Width/Space Poly2 Width/Space Contact Width/Space Metal-1 Width/Space Metal-2 Width/Space Via Width/Space 26 C1027 2.0µm 1.2µm 2.0µm 1.0/1.4µm 1.6/2.0µm 1.2x1.2µm 1.4/1.2µm 1.8/1.4µm 1.2/1.8µm Contact to Poly Space Contact Overlap of Diffusion Contact Overlap of Poly Metal-1 Overlap of Contact Metal-1 Overlap of Via Minimum Pad Opening Minimum Pad to Pad Spacing Minimum Pad Pitch 1.0µm 1.0µm 0.8µm 0.8µm 0.8µm 65x65µm 5.0µm 80µm