® ISO 9001 Registered Process C1012 CMOS 1.0µm 5 Volt Digital Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Symbol VTN γN βN LeffN ∆WN BVDSSN VTFP(N) Minimum 0.725 P-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage Symbol VTP γP βP LeffP ∆WP BVDSSP VTFP(P) Minimum –0.86 Diffusion & Thin Films Well (field) Sheet Resistance N+ Sheet Resistance N+ Junction Depth P+ Sheet Resistance P+ Junction Depth Gate Oxide Thickness Field Oxide Thickness Poly Sheet Resistance Metal-1 Sheet Resistance Metal-2 Sheet Resistance Passivation Thickness Symbol ρN-well(f) ρN+ xjN+ ρP+ xjP+ TGOX TFIELD ρPOLY ρM1 ρM2 TPASS Minimum 0.565 20 Capacitance Gate Oxide Metal-1 to Poly1 Metal-1 to Silicon Metal-2 to Metal-1 Symbol COX CM1P CM1S CMM Minimum © Daily Silver IMP 83 Typical 0.875 0.76 93 0.73 0.81 Maximum 1.025 Typical –1.01 0.64 30.5 0.98 0.75 Maximum –1.16 Typical 0.644 35 0.45 80 0.5 17.5 700 22 45 25 200+900 Maximum 0.720 50 Typical 1.97 0.046 0.028 0.038 Maximum 103 10 10 29.5 33.5 –10 –10 60 15.5 15 25 15 100 19.5 30 655 35 Unit V V1/2 µA/V2 µm µm V V Comments 100x1.0µm 100x1.0µm 100x100µm 100x1.0µm Per side Unit V V1/2 µA/V2 µm µm V V Comments 100x1.0µm 100x1.0µm 100x100µm 100x1.0µm Per side Unit KΩ/o Ω/o µm Ω/o µm nm nm Ω/o mΩ/o mΩ/o nm Comments n-well Unit fF/µm2 fF/µm2 fF/µm2 fF/µm2 oxide+nit. Comments 19 Process C1012 Physical Characteristics Starting Material Starting Mat. Resistivity Typ. Operating Voltage Well Type Metal Layers Poly Layers Contact Size Via Size Metal-1 Width/Space Metal-2 Width/Space Gate Poly Width/Space 20 P <100> 25 - 50 Ω-cm 5V N-well 2 1 1.2 x 1.2µm 1.2 x 1.2µm 1.4 / 2.4µm 2.0 / 1.4µm 1.0 / 1.4µm C1012 N+/P+ Width/Space N+ To P+ Space Contact To Poly Space Contact Overlap Of Diffusion Contact Overlap Of Poly Metal-1 Overlap Of Contact Metal-1 Overlap Of Via Metal-2 Overlap Of Via Minimum Pad Opening Minimum Pad-to-Pad Spacing Minimum Pad Pitch 2.0 / 1.2µm 5.0µm 1.0µm 1.0µm 0.8µm 0.8µm 0.8µm 0.8µm 65 x 65µm 5.0µm 80.0µm